IRF4905 MOSFET
IRF4905 MOSFET specification
- IRF4905 is a P-channel silicon POWER MOSFET transistor device
- Drain to source breakdown voltage (V (BR) DSS) is -55V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is –2V to -4V
- Drain current (Id) is -74A
- Pulsed drain current (IDM) is -260A
- Power dissipation (PD) is 200W
- Total gate charge (Qg) is 180nC
- Drain to source on-state resistance (RDS (ON)) 02Ω
- Rise time (tr) is 99ns
- Peak diode recovery dv/dt is -5.0V/ns
- Thermal resistance junction to case (Rth j-C) is 75℃/W
- Junction temperature/ storage temperature range (TJ/Tstg) is between -55 to 175℃
- Body diode reverse recovery (trr) 89 to 130ns
- Input capacitance is 3400pF
- Efficient device
- Ultra-low resistance
- Dynamic dv/dt rating
- Reliable devices
- Fast switching
- Fast avalanche rated
IRF4905 MOSFET Pinout
| Pin Number | Pin Name | Description |
| 1 | GATE | The gate terminal is used to trigger the MOSFET device |
| 2 | DRAIN | The drain is the input terminal of the MOSFET |
| 3 | SOURCE | In the source, terminal current flows out from the MOSFET |
IRF4905 MOSFET package
The IRF4905 MOSFET device has TO-220 heavier package, it is made with epoxy or plastic material for heat resistance properties.
The TO-220 package is lite weighted and metal coating at the backside of the package is used to transfer the heat towards the heat sink.
IRF4905 MOSFET electrical specification explanation
In this section we try to explain the electrical specifications of IRF4905 MOSFET, this explanation is really helpful for better understanding and support for the replacement process.
Voltage specs
The terminal voltage specs of IRF4905 MOSFET are a drain to source breakdown voltage is -55V, the gate to source voltage is +/-20V, and the gate threshold voltage is -2 to -4V.
The voltage specifications of IRF4905 MOSFET show that it is a device that has high power output.
Current specs
The drain current value of IRF4905 MOSFET is -74A, they had the highest load capability as a semiconductor device.
The pulsed drain current value of IRF4905 MOSFET is -260A, the pulse current value will be measured under a special condition.
The overall current value of IRF4905 MOSFET shows that these devices have a high current capacity and we can use them for driver applications.
Dissipation specs
The power dissipation of IRF4905 MOSFET is 200W, the dissipation capacity mainly depends on the package.
Drain to source on-state resistance
The drain to source on-state resistance is 0.02Ω, it is the overall resistance offered by the MOSFET.
Junction temperature
The junction temperature of the IRF4905 MOSFET is –55 to +175℃.
Thermal resistance junction to case
The thermal resistance of IRF4905 MOSFET is 0.75℃/W
Total gate charge
The total gate charge value of IRF4905 MOSFET is 180nC, it is the charge needed to trigger the MOSFET.
Rise time
The rise time value for IRF4905 MOSFET is 99ns, it is the switching time offered by the MOSFET.
Input capacitance
The input capacitance value of IRF4905 MOSFET is 3400Pf.
Body diode reverse recovery time
The reverse recovery time value of IRF4905 MOSFET is 89 to 130ns.
IRF4905 MOSFET DATASHEET
If you need the datasheet in pdf please click this link
IRF4905 MOSFET EQUIVALENT
The IRF4905 MOSFET has equivalent devices such as IRF044, IRF054, AM90P06-20P, AUIRF4905, and IRF054SMD. The electrical specifications of each of these devices are the same, so we can easily replace them at the place of IRF4905.
Before the replacement process, we need to check and verify the voltage values and PINOUT details of the equivalent device, because both of these specs are very dangerous at the circuit.
IRF4905 vs IRF044 vs IRF9540
In this table comparison, we try to list the electrical specifications of IRF9540 and 2SJ464 MOSFET devices.
| Characteristics | IRF4905 | IRF044 | IRF9540 |
|---|---|---|---|
| Drain to source breakdown voltage (V (BR)DSS)) | -55V | -60V | -100V |
| Gate to source voltage (VGS) | +/-20V | +/-20V | +/-20V |
| Gate threshold voltage (Vg(th)) | -2 to -4V | -2 to -4V | -2 to -4V |
| Drain current (ID) | -74A | -44A | -19A |
| Total gate charge (Qg) | 180nC | 39 to 88nC | 61nC |
| Power dissipation (PD) | 200W | 125W | 150W |
| Junction temperature (TJ) | -55 to +175°C | -55 to +150℃ | -55 to +175°C |
| Thermal resistance to case | 0.75℃/W | 1℃/W | 1℃/W |
| Drain to source on-state resistance (RDS) | 0.02Ω | 0.028Ω | 0.20Ω |
| Rise time (tr) | 99ns | 130ns | 73ns |
| Input capacitance | 3400pF | 2400pF | 1400pF |
| dv/dt | -5.0V/ns | -4.5V/ns | 590pF |
| Reverse recovery time (trr) | 89 to 130ns | 220ns | 130 to 260ns |
| Package | TO-220 | TO-3 | TO-220AB |
Characteristics curves of IRF4905 MOSFET
The figure shows the output characteristics of IRF4905 MOSFET, the graph plots with the drain to source current vs drain to source voltage.
At the different gate to source voltage values and constant temperature value, the drain to source current increases and become constant after some time with respect to drain to source voltage.
The figure shows the maximum safe operating area characteristics of the IRF4905 MOSFET device, the graph plots with drain current vs drain to source voltage and on-state resistance, and temperature values.
Applications of IRF4905 MOSFET
- Fast switching applications
- Audio amplifier circuit
- Industrial applications
- Battery charger applications
- Solar battery applications
- Motor driver applications
