IRF3708 MOSFET
IRF3708 specification
- IRF3708 is an N-channel POWER MOSFET device
- Drain to source voltage (VDS) is 30V
- Gate to source voltage (VGS) is +/- 12V
- Gate to the threshold voltage (VGS (th)) is 6V to 2V
- Drain current (ID) is 62A
- Pulsed drain current (IDM) is 248A
- Power dissipation (PD) is 87W
- Total gate charge (Qg) is 24nC
- Drain to source on-state resistance (RDS (ON)) 5 to 29mΩ
- Rise time (tr) is 50ns
- Thermal resistance junction to case (Rth j-C) is 73℃/W
- Junction temperature (TJ) is between -55 to 175℃
- Body diode reverse recovery (trr) 43 to 65ns
- Input capacitance is 2417pf
- Output capacitance is 707pf
- SMPS MOSFET
- Ultra-low gate impedance
- Very low on-state resistance
- Fully characterized avalanche
- Enhancement mode
- Fast switching
IRF3708 Pinout
| Pin Number | Pin Name | Description |
| 1 | GATE | The gate terminal will be used to trigger the MOSFET device |
| 2 | DRAIN | The drain is the input terminal of the MOSFET |
| 3 | SOURCE | In the source, terminal current flows out from the MOSFET |
IRF3708 package
IRF3708 is an SMPS MOSFET device, which had a TO-220AB device package. It is made of epoxy/plastic material which has higher temperature capacity and they also coated with metal for heat transferring ability.
TO-220AB is the through-hole bulkier package which is very useful for a wide range of power applications, so we can easily attach the heat sink with it for the heat-transferring process.
IRF3708 specification explanation & application note:
Here in the section, we explain the electrical specifications of IRF3708 MOSFET, this explanation is very useful for a better understanding of this device and supports us in the replacement process.
Voltage specs
Voltage specs of IRF3708 MOSFET are a drain to source voltage is 30V, the gate to source voltage is +/-12V and the gate to source threshold voltage is 0.6V to 2V.
The voltage specification of IRF3708 MOSFET shows, it is a low-power device which had more general-purpose applications.
Current specs
The current value of IRF3708 MOSFET is 62A, it is the maximum load capacity of the device.
The pulsed drain current value of IRF3708 MOSFET is 248A, this value is calculated at a specific condition.
The current specification is higher for this device, so this indicates IRF3708 MOSFET has more switching and driver applications.
Dissipation specs
Dissipation power value of IRF3708 MOSFET is 87W, which is very important for power applications.
Drain to source on-state resistance
The ON-state resistance value of IRF3708 MOSFET is 14.5 to 29mΩ, this value is important at the circuit level.
Junction temperature/storage temperature
Maximum temperature value of IRF3708 MOSFET is -55 to +175℃.
Thermal resistance, junction to case
Thermal resistance between junction to case value is 1.73℃/W, this is also been calculated with the device package.
Total gate charge
Total gate charge value of IRF3708 MOSFET is 24nC
Rise time
Rise time value of IRF3708 MOSFET is 50ns, this is the switching speed of the device.
Input capacitance
Input capacitance value of IRF3708 MOSFET is 2417Pf.
Output capacitance
Output capacitance value is important at the circuit level, this value is 707Pf.
Reverse recovery time
The reverse recovery time value of IRF3708 MOSFET is 43 to 65ns
IRF3708 DATASHEET
If you need the datasheet in pdf please click this link
IRF3708 EQUIVALENT
IRF3708 MOSFET has equivalent devices such as IRF1407, IRF1104, IRF3205, IRFB4115, IRF3709, IRL3803, IRF3708PBF, CS100N03, and IRF1403, each of these MOSFET have the same set of electrical specifications, so we can use them as the equivalent for IRF3708.
For applications like power switching and power managing applications, voltage specs, current specs, switching speed, and on-state resistance specs are very important, so check and verify them before the replacement process.
IRF3708 vs IRFB3306 vs IRF1405
Here in the table below we listed the electrical specifications of IRF3708, IRFB3306, and IRF1405 MOSFET devices, this comparison is very useful for a better understanding of the replacement process.
| Characteristics | IRF3708 | IRFB3306 | IRF1405 |
|---|---|---|---|
| Drain to source voltage (VDS)) | 30V | 60V | 55V |
| Gate to source voltage (Vgs) | +/-12V | +/-20V | +/-20V |
| Gate threshold voltage (Vg(th)) | 0.6 to 2V | 2 to 4V | 2 to 4V |
| Drain current (ID) | 62A | 16A | 169A |
| Pulsed drain current | 248A | 620A | 680A |
| Total gate charge (Qg) | 24nC | 85 to 120nC | 170 to 260nC |
| Power dissipation (PD) | 87W | 230W | 330W |
| Junction temperature (TJ) | -55 to +175°C | -55 to +175°C | -55 to +175°C |
| Drain to source on-state resistance (RDS) | 14.5 to 29mΩ | 3.3 to 4.2mΩ | 4.6 to 5.3mΩ |
| Rise time (tr) | 50ns | 76ns | 190ns |
| Reverse recovery time (trr) | 43 to 65ns | 35ns | 88 to 130ns |
| Input capacitance | 2417pf | 4520pf | 5480pf |
| Output capacitance | 707pf | 500pf | 1210pf |
| Package | TO-220AB | TO-220AB | TO-220AB |
IRF3708 graphical characteristics curves
The graphical characteristics of IRF3708 MOSFET are plots with the drain to source current vs drain to source voltage.
At a constant gate-to-source voltage value, the drain-to-source current increases from the lowest value to the higher value.
The figure shows the maximum safe operating area characteristics of IRF3708 MOSFET, the graph plots with drain current, drain to source voltage, on-state resistance, and switching speed.
IRF3708 Arduino
The figure shows the IRF3708 transistor-based Arduino circuit, the circuit consists of IRF3708 MOSFET, Arduino uno board, and load.
The IRF3708 MOSFET is used to drive the load on the circuit, which means if it is a motor load, the IRF3708 MOSFET handles the heavy current flow.
IRF3708 applications
- HIGH-Frequency DC-DC isolated converter
- Synchronism rectification for telecom
- High-frequency buck converter for computer processor power
- UPS
- SMPS
- Battery charger circuit
- Motor driver circuit
- Audio amplifier circuit
