IRF350 MOSFET
IRF350 specification
- IRF350 is an N-channel enhancement mode MOSFET
- Drain to source voltage (VDS) is 400V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is 2V to 4V
- Drain current (Id) is 14A
- Pulsed drain current (IDM) is 56A
- Power dissipation (PD) is 150W
- Total gate charge (Qg) is 52 to 110nC
- Drain to source on-state resistance (RDS (ON)) 300Ω
- Rise time (tr) is 190ns
- Thermal resistance junction to case (Rth j-C) is 83K/W
- Junction temperature or storage temperature (TJ) is between -55 to 150℃
- Body diode reverse recovery (trr) 1200ns
- Input capacitance is 2600pf
- Output capacitance is 680pf
- High-speed switching device
- Repetitive avalanche rating
- Dynamic dv/dt rating
- Simple drive requirement
IRF350 Pinout
| Pin Number | Pin Name | Description |
| 1 | GATE | The gate terminal will be used to trigger the MOSFET device |
| 2 | DRAIN | The drain is the input terminal of the MOSFET |
| 3 | SOURCE | In the source, terminal current flows out from the MOSFET |
IRF350 MOSFET package
The IRF350 MOSFET has a TO-3 transistor package, TO-3 is a metal can-covered package.
TO-3 package is a three-terminal device that is made of METAL covering, the outer coating will increase temperature stability and be used for high-power applications.
IRF350 MOSFET electrical specification & application notes
Here in this section, we explain the IRF350 MOSFET specification, this explanation is really helpful for a better understanding of the device.
Voltage specs
The voltage specs of IRF350 MOSFET are a drain-to-source voltage is 400V, a gate-to-source voltage is +/-20V, and a gate threshold voltage is 2V to 4V.
The voltage specifications of IRF350 MOSFET shows that it is a high-voltage device having multiple power applications.
Current specs
The current value of IRF350 MOSFET is 14A, it is the maximum load capacity of the device.
The pulsed collector current value of IRF350 MOSFET is 56A, it is the current value at specific conditions.
Dissipation specs
The power dissipation value of IRF350 MOSFET is 150W, it is the value mainly depends on the device package.
Drain to source on-state resistance
The on-state resistance value of IRF350 MOSFET is 0.300Ω, it is the total resistance ability of the device.
Junction temperature/ operation temperature
The junction temperature and storage temperature of the IRF350 MOSFET is –55 to +150℃.
Thermal resistance junction to case
The thermal resistance, junction to the case of IRF350 MOSFET is 0.83K/W
Total gate charge
The total gate charge value of IRF350 is 52 to 110nC.
Rise time
The rise time value for IRF350 MOSFET is 190ns, which is the switching speed of the device.
Output capacitance
The output capacitance of IRF350 MOSFET is 680Pf, it is the total capacitance offered by the device.
IRF350 DATASHEET
If you need the datasheet in pdf please click this link
IRF350 EQUIVALENT
The IRF350 POWER transistor has equivalent devices such as IRF3315, IRF330, IRF440, IRF3515s, and IRF360, and each of them has the same set of electrical specifications.
The voltage specs and PINOUT details of IRF350 MOSFET are very important at the circuit level, so we need to check and verify them to become the replacement process.
IRF350 vs IRF330 vs IRF440
| Characteristics | IRF350 | IRF330 | IRF440 |
|---|---|---|---|
| Drain to source voltage (VDS)) | 400V | 400V | 500V |
| Gate to source voltage (Vgs) | 20V | 20V | 20V |
| Gate threshold voltage (Vg(th)) | 2 to 4V | 2 to 4V | 2 to 4V |
| Drain current (Id) | 14A | 5.5A | 8A |
| Pulsed drain current | 56A | 22A | 32A |
| Thermal resistance, junction to case | 0.83℃/W | - | - |
| Total gate charge (Qg) | 52 to 110nC | 17 to 39nC | 27.3 to 68.5Nc |
| Power dissipation (PD) | 150W | 75W | 125W |
| Junction temperature (TJ) | -55 to +150°C | -55 to +150°C | -55 to +150℃ |
| Drain to source on-state resistance (RDS(on)) | 0.300Ω | 1Ω | 0.85Ω |
| Rise time (tr) | 190ns | 73ns | 73ns |
| Reverse recovery time (trr) | 1200ns | 700ns | 700ns |
| Input capacitance | 2600pf | 1300pf | 1300pF |
| Output capacitance | 680pf | 310pf | 310pF |
| Package | TO-3 | TO-3 | TO-3 |
IRF350 graphical representations
The figure shows the output characteristics of IRF350 MOSFET, the graph plots with drain current vs drain to source voltage.
At the different gate to source voltage values, the drain current increases and become infinity with respect to drain to source voltage.
Applications of IRF350 MOSFET
- Voltage control applications
- Very fast switching applications
- Temperature stability applications
- SMPS
- Motor control applications
- Inverter applications
- Chopper circuit
- Audio amplifier applications
