IRF3205 MOSFET

IRF3205 MOSFET specification

• It is an N-channel POWER MOSFET device
• Drain to source breakdown voltage (V _{BR (DSS)}) is 55V
• Gate to source voltage (V_gs) is +/- 20V
• Gate to the threshold voltage (V_{g (th)}) is 2 to 4V
• Drain current (I_d) is 110A
• Pulsed drain current (I_DM) is 390A
• Power dissipation is (P_D) is 200W
• Drain to source on-state resistance (R_{DS (ON)}) 8mΩ
• Gate to body leakage current (I_GSS) is 100nA
• Total gate charge (Q_g) is 146nC
• Reverse recovery time (trr) is 69 to 104ns
• Peak diode recovery (dv/dt) is 5V/ns
• Rise time (tr) is 101ns
• Thermal resistance junction to case (R_th j-c) is 75℃/W
• Junction temperature (T_J) is between -55 to 175℃

IRF3205 MOSFET Pinout

Pin Number	Pin Name	Description
1	Gate	Gate will trigger the MOSFET device
2	Drain	In the drain terminal were current flows into the MOSFET
3	Source	In the source, terminal current flows out from the MOSFET

 

IRF3205 MOSFET package

The IRF3205 POWER MOSFET is made with the TO-220AB device package, it is a power semiconductor device covering.

The TO-220AB device package is made with a mixture of epoxy and plastic material and also the outer cover is made using metal, the metal covering is used as the heat transferring medium.

At the outer metal covering, we can easily attach a heat sink with it and this type of packaging are been used for power devices used for power switching devices, and driver circuit devices.

IRF3205 MOSFET electrical specification/application description

In this section, we try to explain the electrical specification of the IRF3205 MOSFET device with its application description.

Voltage specs

The voltage specs of IRF3205 MOSFET are the gate to source voltage is +/-20V, drain to source breakdown voltage is 55v, and the gate threshold voltage is between 2 to 4V.

The voltage specifications of IRF3205 MOSFET show that it is a common type of POWER device.

Current specs

The current values of IRF3205 MOSFET are drain current is 110A, pulsed drain current value is 390A, these current specs show that IRF3205 MOSFET is a high current POWER device.

The drain to source leakage current is 25uA, the gate to source forward leakage current is 100nA, and the leakage current values of this POWER device are less.   

Dissipation specs

The power dissipation of this MOSFET is 200W, the TO-220 power MOSFET package made it a higher dissipating device.

Drain to source on-state resistance

The drain to source on-state resistance is 8mΩ, it is the resistance value shown by the MOSFET.

Junction temperature

The junction temperature of this MOSFET is 175℃.

Reverse recovery time (trr)

The reverse recovery time of the IRF3205 MOSFET is 69 to 104ns, it is the amount of time needed to discharge before starting conducting.

Total gate charge (Q_g)

The total gate charge of IRF3205 MOSFET is 146nC, the total gate charge needed to inject towards the gate to turn ON the MOSFET.

IRF3205 MOSFET DATASHEET

If you need the datasheet in pdf please click this link

IRF3205 MOSFET EQUIVALENT

The MOSFET devices such as IRFB3206, IRFB3256, IRFB3307, IRF1405, IRFB3306, and IRFB3006 are the equivalents of IRF3205.

Most of these MOSFETs have almost the same electrical specifications, so we can use them as the equivalent.

IRF3205 vs IRFB1405 vs IRFB4310

In the table below we listed the comparison of electrical specs of each of these MOSFETs such as IRF3205 vs IRFB1405 vs IRFB4310, the comparison will help us to select the perfect equivalent for us.

Characteristics	IRF3205	IRFB1405	IRFB4310
Drain to source breakdown voltage (VBR (DSS))	55V	75V	100V
Gate to source voltage (Vgs)	20V	20V	20V
Gate threshold voltage (Vg(th))	2 to 4V	2 to 4V	2 to 4V
Drain current (Id)	110A	133A	140A
Total gate charge (Qg)	146nC	170nC	25nC
Power dissipation (PD)	200W	200W	330W
Junction temperature (TJ)	175°C	175°C	175°C
Drain to source on-state resistance (RDS)	8mΩ	13mΩ	7mΩ
Rise time (tr)	101ns	170ns	110ns
Package	TO-220AB	TO-220AB	TO-220AB

The voltage specs of each IRF3205, IRFB1405, and IRFB4310 MOSFETs are the almost same.

The current specs and power dissipation value of IRFB4310 MOSFET are higher than the other two MOSFET devices, this is why these MOSFET had more POWER applications.

The ON-state resistance value of IRFB1405 MOSFET is higher.

Characteristics curves of IRF3205 MOSFET

The figures show the output characteristics of IRF3205 MOSFET, the graph is plotted with the drain to source current vs drain to source voltage.

At a fixed voltage range, the voltage value will increase with respect to the current value.

The current value increases towards a certain limit and becomes constant and at the same time voltage will increase towards an infinity range.

The figure shows the on-state resistance characteristics of IRF3205 MOSFET, the graph is plotted with the drain to source on-resistance vs junction temperature.

At a peak current value, the resistance starts at a certain limit and the temperature value increases towards the higher value.

The on-state resistance value increases with respect to junction temperature, this will indicate that at the start stages of MOSFET the resistance is lower and then it will increase towards the higher limit.

Inverter circuits using IRF3205

The figure shows the inverter circuit using a TL494 PWM module with an h-bridge made with IRF3205 MOSFET.

The TL494 module is used to generate the PWM pulse and forward toward the h-bridge circuit, the IRF3205 MOSFET-based H-bridge converts the PWM pulse into an AC signal.

Relay driver circuit using IRF3205 MOSFET

The figure shows the relay driver circuit using IRF3205 MOSFET, the MOSFET is connected at the coil terminal ground.

Applications of IRF3205 MOSFET

• High-speed switching devices
• Power supply devices
• UPS
• Booster converter
• Solar inverter
• Choppers
• Speed controller circuit
• Motor drivers
• Battery charger circuits
• Battery management system (BMS)