IRF250 MOSFET
IRF250 specification
- IRF250 is an N-channel POWER MOSFET device
- Drain to source voltage (VDS) is 200V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is 2V to 4V
- Drain current (Id) is 30A
- Pulsed drain current (IDM) is 120A
- Power dissipation (PD) is 150W
- Total gate charge (Qg) is 55 to 115nC
- Drain to source on-state resistance (RDS (ON)) 085Ω to 0.090Ω
- Rise time (tr) is 190ns
- Thermal resistance junction to case (Rth j-C) is 83℃/W
- Junction temperature or storage temperature (TJ) is between -55 to 150℃
- Body diode reverse recovery (trr) 950ns
- Input capacitance is 3500pf
- Output capacitance is 700pf
- Low on-state resistance
- Fast switching time
- Low input capacitance
- High-range safe operating area
- High-temperature stability
- Repetitive avalanche rating
- Hermetically seated
IRF250 Pinout
| Pin Number | Pin Name | Description |
| 1 | GATE | The gate terminal will be used to trigger the MOSFET device |
| 2 | SOURCE | In the source, terminal current flows out from the MOSFET |
| 3 | DRAIN (Case) | The drain terminal is the input of the device |
IRF250 package
IRF250 is a two-terminal transistor that has TO-3 metal CAN package, it is made of metal coated outside, and this will help them for higher temperature stability.
The higher temperature capacity and power handleability is been used in multiple applications.
IRF250 electrical specification & application notes:
In this section, we properly explain the electrical specifications of IRF250 MOSFET.
Voltage specs
The voltage specs of IRF250 MOSFET are a drain-to-source voltage is 200V, a gate-to-source voltage is +/-20V, and a gate threshold voltage is 2V to 4V.
The voltage specifications of this MOSFET shows, it is a POWER device which had high voltage-related applications.
Current specs
The collector current value of IRF250 MOSFET is 30A, it is the maximum load capacity of the device.
The pulsed collector current value of IRF250 MOSFET is 120A, this current value is at a specific condition and it is always three times higher than the collector current value.
The higher current specs of IRF250 MOSFET show that this device has more drivers, fast switching, and higher load applications.
Dissipation specs
The power dissipation value of IRF250 MOSFET is 150W, it is the product of voltage and current at the device.
Drain to source on-state resistance
The on-state resistance value of IRF250 MOSFET is 0.085 to 0.090Ω, this is the total resistance offered by the device.
Junction temperature/ operation temperature
The junction temperature and storage temperature of the IRF250 MOSFET is –55 to +150℃.
Total gate charge
The total gate charge value of IRF250 is 55 to 115nC.
Rise time
The rise time value for IRF250 is 190ns
Output capacitance
The output capacitance of IRF250 MOSFET is 700Pf
Input capacitance
The input capacitance offered by the IRF250 MOSFET is 3500Pf
IRF250 MOSFET DATASHEET
If you need the datasheet in pdf please click this link
IRF250 EQUIVALENT
The IRF250 device has equivalent MOSFETs such as IRF034, IRF044, IRF054, IRF100B201, IRF143, and IRF150, each of these devices has the same set of electrical specifications, so we can easily replace with these devices.
The voltage specs and PINOUT details are been checked and verified for better understanding and it is really useful for the replacement process.
IRF250 vs IRF150 vs IRF034
| Characteristics | IRF250 | IRF150 | IRF034 |
|---|---|---|---|
| Drain to source voltage (VDS)) | 200V | 100V | 60V |
| Gate to source voltage (Vgs) | 20V | 20V | 20V |
| Gate threshold voltage (Vg(th)) | 2 to 4V | 2 to 4V | 2 to 4V |
| Drain current (Id) | 30A | 38A | 25A |
| Pulsed drain current | 120A | 152A | 100A |
| Thermal resistance, junction to case | 0.83℃/W | - | 1.67℃/W |
| Total gate charge (Qg) | 55 to 115nC | 50 to 125nC | 21 to 47nc |
| Power dissipation (PD) | 150W | 150W | 75W |
| Junction temperature (TJ) | -55 to +150°C | -55 to +150°C | -55 to +150℃ |
| Drain to source on-state resistance (RDS(on)) | 0.085 to 0.090Ω | 0.055 to 0.065Ω | 0.050 to 0.058Ω |
| Rise time (tr) | 190ns | 190ns | 10ns |
| Reverse recovery time (trr) | 950ns | 500ns | 220ns |
| Input capacitance | 3500pf | 3700pf | 1300pF |
| Output capacitance | 700pf | 1100pf | 650pF |
| Package | TO-3 | TO-3 | TO-3 |
IRF250 graphical representations
The figure shows the output characteristics of IRF250 MOSFET, the graph plots with drain current vs drain to source voltage.
The drain current value increases at the initial stages and then at the different higher gate to source voltages, at higher values drain current becomes constant and infinite.
The graph shows the safe operating area characteristics of IRF250 MOSFET, the graph plots between drain current vs drain to source voltage.
IRF250 MOSFET applications
- Voltage related applications
- Fast switching circuits
- Motor controller circuits
- Driver applications
- Inverter applications
- SMPS circuit
- High-energy pulse circuit applications
