IRF1405 MOSFET
IRF1405 is an N-channel power MOSFET device which having fast switching and moderate voltage specifications.
IRF1405 specs
- IRF1405 is an N-channel POWER MOSFET device
- Drain to source voltage (VDS) is 55V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is 2V to 4V
- Drain current (ID) is 169A
- Pulsed drain current (IDM) is 680A
- Power dissipation (PD) is 330W
- Total gate charge (Qg) is 170 to 260nC
- Drain to source on-state resistance (RDS (ON)) 6 to 5.3mΩ
- Rise time (tr) is 190ns
- Thermal resistance junction to case (Rth j-C) is 45℃/W
- Junction temperature (TJ) is between -55 to 175℃
- Body diode reverse recovery (trr) 88 to 130ns
- Input capacitance is 5480pf
- Output capacitance is 1210pf
- Advanced process technology
- Ultra dv/dt rating
- Fast switching
- Repetitive avalanche allowed TJ MAX
- It is an affected and reliable device
IRF1405 Pinout
| Pin Number | Pin Name | Description |
| 1 | GATE | The gate terminal will be used to trigger the MOSFET device |
| 2 | DRAIN | The drain is the input terminal of the MOSFET |
| 3 | SOURCE | In the source, terminal current flows out from the MOSFET |
IRF1405 package
IRF1405 is a power MOSFET device having a TO-220AB device package, TO-220AB is made with epoxy/plastic, which will provide temperature resistance and compactness as an electronic component.
IRF1405 is a medium-power MOSFET device that has many power applications.
IRF1405 electrical specification explanation
In this section we try to explain the electrical specifications of IRF1405, this specs explanation is really useful for the replacement process.
Voltage specs
Voltage specifications of IRF1405 MOSFET, drain to source voltage is 55V, the gate to source voltage is 20V, and the gate threshold voltage is 2V and 4V, the voltage specs show it has multiple power applications.
Current specs
The drain current value of IRF1405 MOSFET is 169A, it is the maximum load capacity of the device.
The pulsed drain current value of IRF1405 MOSFET is 680A, it is the pulsed current value mostly three times higher than the normal value.
Dissipation specs
The power dissipation value of IRF1405 MOSFET is 330W, the dissipation energy will be calculated from the device package.
Drain to source on-state resistance
The drain-to-source on-state resistance of IRF1405 MOSFET is 4.6 to 5.3mΩ, it is the total resistance of the device.
Junction temperature/ storage temperature
The junction temperature/storage temperature of the IRF1405 MOSFET.
Thermal resistance junction to case
The thermal resistance, junction to case value of IRF1405 MOSFET is 0.45℃/W
Total gate charge
The total gate charge value of IRF1405 is 170 to 260nC
Rise time
The rise time value for IRF1405 MOSFET is 190ns
IRF1405 MOSFET DATASHEET
If you need the datasheet in pdf please click this link
IRF1405 EQUIVALENT
The IRF1405 MOSFET has equivalent devices such as IRF034, IRF054, IRFB3206, IRFB3306, IRFB3207, IRFB3256, IRFB3306G, and IRFB4110, these devices have the same set of electrical specifications.
We need to consider PINOUT details and voltage specifications of IRF1405 MOSFET at the circuit level for the replacement process.
IRF1405 vs IRF034 vs IRF054
| Characteristics | IRF1405 | IRF034 | IRF054 |
|---|---|---|---|
| Drain to source voltage (VDS)) | 55V | 60V | 60V |
| Gate to source voltage (Vgs) | 20V | 20V | 20V |
| Gate threshold voltage (Vg(th)) | 2 to 4V | 2 to 4V | 2 to 4V |
| Drain current (ID) | 169A | 25A | 45A |
| Pulsed drain current | 680A | 100A | 220A |
| Thermal resistance, junction to case | 0.45℃/W | 1.67℃/W | 0.83℃/W |
| Total gate charge (Qg) | 170 to 260nC | 21 to 47nC | 80 to 180nC |
| Power dissipation (PD) | 330W | 75W | 150W |
| Junction temperature (TJ) | -55 to +175°C | -55 to +150°C | -55 to +150℃ |
| Drain to source on-state resistance (RDS) | 4.6 to 5.3mΩ | 0.050 to 0.058Ω | 0.022Ω to 0.025Ω |
| Rise time (tr) | 190ns | - | 180ns |
| Reverse recovery time (trr) | 88 to 130ns | 220ns | 180ns |
| Input capacitance | 5480pf | 1300pf | 4600pF |
| Output capacitance | 1210pf | 650pf | 2000pf |
| Package | TO-220AB | TO-3 | TO-3 |
IRF1405 graphical characteristics
The figure shows the output characteristics of IRF1405 MOSFET, the graph plots the drain to source current vs drain to source voltage.
At a constant gate to source voltage values, the drain to source current increases with respect to voltage, and the current becomes constant.
The figure shows the safe operating characteristics graph of IRF1405 MOSFET, the graph plots the drain to source current vs drain to source voltage.
Applications of IRF1405 MOSFET
- Industrial motor drivers
- Electric power steering
- ABS systems
- Wiper controller systems
- Power door applications
- Automotive applications
- Power supply circuit
- Solar charger circuit
- UPS
- BMS systems
