IRF1404z MOSFET

IRF1404z MOSFET
IRF1404z MOSFET

IRF1404z MOSFET specification

  • It is an N-channel power MOSFET
  • Drain to source breakdown voltage (V BR (DSS)) is 40V
  • Gate to source voltage (Vgs) is +/- 20V
  • Gate to the threshold voltage (Vg (th)) is 2 to 4V
  • Drain current (Id) is 180A
  • Pulsed drain current (IDM) is 710A
  • Power dissipation is (Pd) is 200W
  • Drain to source on-state resistance (RDS (ON)) 7Mohm
  • Drain to source leakage current (IDSS) is 20 to 250uA
  • Total gate charge (Qg) is 150nC
  • Reverse recovery time (trr) is 28 to 42ns
  • Rise time (tr) is 110ns
  • Junction temperature (TJ) is between -55 to 175℃
  • Ultra-low on resistance
  • Fast switching

IRF1404z MOSFET Pinout

IRF1404z MOSFET Pinout
IRF1404z MOSFET Pinout
Pin Number Pin Name Description
1 Gate Gate will trigger the MOSFET device   
2 Drain  Current flows through the drain
3 Source Current flows through the source

 

IRF1404z MOSFET package

The IRF1404z MOSFET device had the device package TO-220AB, the IRF1404z is a power MOSFET that had fast speeding and power applications.

This is why IRF1404z MOSFET had the TO-220AB package, this type of package is made with epoxy and metal.

The epoxy material is capable of withstanding high power and the backside metal cover is very useful for attaching heat sink and also they help to transfer the heat towards outside.

IRF1404z MOSFET electrical specification description

The IRF1404z is a power MOSFET that has a higher power capacity, in this section, we try to explain the IRF1404z MOSFET electrical specs.

Voltage specs

The voltage specs of IRF1404z is the gate to source voltage is 20v, drain to source breakdown voltage is 40v and the gate threshold voltage is between 2 to 4v, the voltage specification shows it is a general-purpose power device.

Current specs

The current drain value of IRF1404z MOSFET is 180A and the pulsed max drain current value is 710A, both the values show that it is a power MOS device.

Dissipation specs

The power dissipation of IRF1404z MOSFET is 200W, the dissipation value shows the heating capacity of this device.

Drain to source on-state resistance

The drain to source on-state resistance is 3.7Mohm for the IRF1404z MOSFET device, this is the resistance value this semiconductor device can offer.

Junction temperature

The junction temperature of this MOSFET is 150℃.

Reverse recovery time (trr)

The reverse recovery time of the IRF1404z MOSFET is 28 to 42ns, it is the amount of time needed to discharge before start conducting.

IRF1404z MOSFET DATASHEET

IRF1404z MOSFET DATASHEET
IRF1404z MOSFET DATASHEET

If you need the datasheet in pdf please click this link

IRF1404z MOSFET EQUIVALENT

The MOSFET equivalent for IRF1404z is IRF2804, IRLB3034, IRFB3006G, IRFB3206, IRFB7430, and IRFB3077.

Each of these MOSFET devices had the same electrical and physical specifications, so we can use these MOSFETs as the equivalents and replace them at the circuits.

IRF1404z vs IRF2204 vs IRFB7437

In this table, we listed the comparison of IRF1404z vs IRF2204 vs IRFB7437, we try to list the electrical specs of each of the MOSFETs.

CharacteristicsIRF1404zIRF2204IRFB7437
Drain to source breakdown voltage (VBR (DSS))40V40V40V
Gate to source voltage (Vgs)20V20V20V
Gate threshold voltage (Vg(th))2 to 4V5V3.9V
Drain current (Id)180A210A250A
Total gate charge (Qg)150nC130nC225nC
Power dissipation (PD)200W330W230W
Junction temperature (TJ) 150°C150°C150°C
Drain to source on-state resistance (RDS)3.7Mohm3.6Mohm2Mohm
Rise time (tr)100ns140ns70ns
PackageTO-220ABTO-220ABTO-220AB

Each of the MOSFET devices have almost the same electrical specs, each MOSFET had its strengths and weakness.

Characteristics curves of IRF1404z MOSFET

output characteristics curves of IRF1404z MOSFET
output characteristics curves of IRF1404z MOSFET

The figure shows the output characteristics curves of IRF1404z MOSFET, the graph is plotted with the drain to source current vs drain to source voltage.

The curve is plotted at a constant gate to source voltage values, the drain to source current increases and touches a limit then the voltage value increases.

safe operating area of IRF1404z MOSFET
safe operating area of IRF1404z MOSFET

The figure shows the safe operating area of IRF1404z MOSFET, we can see two of the areas of safe operation which are on the drain to source on-resistance and drain to source current and drain to source voltage.

transfer characteristics of IRF1404z MOSFET
transfer characteristics of IRF1404z MOSFET

The figure shows the transfer characteristics of IRF1404z MOSFET, the graph is plotted with the drain to source current vs gate to source voltage.

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