IRF1404z MOSFET specification
- It is an N-channel power MOSFET
- Drain to source breakdown voltage (V BR (DSS)) is 40V
- Gate to source voltage (Vgs) is +/- 20V
- Gate to the threshold voltage (Vg (th)) is 2 to 4V
- Drain current (Id) is 180A
- Pulsed drain current (IDM) is 710A
- Power dissipation is (Pd) is 200W
- Drain to source on-state resistance (RDS (ON)) 7Mohm
- Drain to source leakage current (IDSS) is 20 to 250uA
- Total gate charge (Qg) is 150nC
- Reverse recovery time (trr) is 28 to 42ns
- Rise time (tr) is 110ns
- Junction temperature (TJ) is between -55 to 175℃
- Ultra-low on resistance
- Fast switching
IRF1404z MOSFET Pinout
|Gate will trigger the MOSFET device
|Current flows through the drain
|Current flows through the source
IRF1404z MOSFET package
The IRF1404z MOSFET device had the device package TO-220AB, the IRF1404z is a power MOSFET that had fast speeding and power applications.
This is why IRF1404z MOSFET had the TO-220AB package, this type of package is made with epoxy and metal.
The epoxy material is capable of withstanding high power and the backside metal cover is very useful for attaching heat sink and also they help to transfer the heat towards outside.
IRF1404z MOSFET electrical specification description
The IRF1404z is a power MOSFET that has a higher power capacity, in this section, we try to explain the IRF1404z MOSFET electrical specs.
The voltage specs of IRF1404z is the gate to source voltage is 20v, drain to source breakdown voltage is 40v and the gate threshold voltage is between 2 to 4v, the voltage specification shows it is a general-purpose power device.
The current drain value of IRF1404z MOSFET is 180A and the pulsed max drain current value is 710A, both the values show that it is a power MOS device.
The power dissipation of IRF1404z MOSFET is 200W, the dissipation value shows the heating capacity of this device.
Drain to source on-state resistance
The drain to source on-state resistance is 3.7Mohm for the IRF1404z MOSFET device, this is the resistance value this semiconductor device can offer.
The junction temperature of this MOSFET is 150℃.
Reverse recovery time (trr)
The reverse recovery time of the IRF1404z MOSFET is 28 to 42ns, it is the amount of time needed to discharge before start conducting.
IRF1404z MOSFET DATASHEET
If you need the datasheet in pdf please click this link
IRF1404z MOSFET EQUIVALENT
The MOSFET equivalent for IRF1404z is IRF2804, IRLB3034, IRFB3006G, IRFB3206, IRFB7430, and IRFB3077.
Each of these MOSFET devices had the same electrical and physical specifications, so we can use these MOSFETs as the equivalents and replace them at the circuits.
IRF1404z vs IRF2204 vs IRFB7437
In this table, we listed the comparison of IRF1404z vs IRF2204 vs IRFB7437, we try to list the electrical specs of each of the MOSFETs.
|Drain to source breakdown voltage (VBR (DSS))
|Gate to source voltage (Vgs)
|Gate threshold voltage (Vg(th))
|2 to 4V
|Drain current (Id)
|Total gate charge (Qg)
|Power dissipation (PD)
|Junction temperature (TJ)
|Drain to source on-state resistance (RDS)
|Rise time (tr)
Each of the MOSFET devices have almost the same electrical specs, each MOSFET had its strengths and weakness.
Characteristics curves of IRF1404z MOSFET
The figure shows the output characteristics curves of IRF1404z MOSFET, the graph is plotted with the drain to source current vs drain to source voltage.
The curve is plotted at a constant gate to source voltage values, the drain to source current increases and touches a limit then the voltage value increases.
The figure shows the safe operating area of IRF1404z MOSFET, we can see two of the areas of safe operation which are on the drain to source on-resistance and drain to source current and drain to source voltage.
The figure shows the transfer characteristics of IRF1404z MOSFET, the graph is plotted with the drain to source current vs gate to source voltage.