HA210N06 MOSFET

HA210N06 MOSFET specification

• It is an N-channel MOSFET device
• Drain to source voltage (V_DSS) is 60V
• Gate to source voltage (V_gss) is +/- 25V
• Gate to the threshold voltage (V_{gs (th)}) is 2 to 4V
• Drain current (I_d) is 130A
• Pulsed drain current (I_DM) is 210A
• Power dissipation is (P_D) is 220W
• Drain to source on-state resistance (R_{DS (ON)}) 4mΩ
• Gate to body leakage current (I_GSS) is 100nA
• Total gate charge (Q_g) is 135nC
• Reverse recovery time (trr) is 48ns
• Thermal resistance junction to case (R_th j-c) is 68℃/W
• Junction temperature (T_J) is between -55 to 175℃

HA210N06 MOSFET Pinout

Pin Number	Pin Name	Description
1	Gate	Gate will trigger the MOSFET device
2	Drain	In the drain terminal were current flows into the MOSFET
3	Source	In the source, terminal current flows out from the MOSFET

 

HA210N06 MOSFET package

The HA210N06 MOSFET had the package of TO-3P it is a bulkier package that has a provision to attach a heat sink with it.

The TO-3P package is made with epoxy/plastic and metal material, the combination of both these materials will be good for heat resistance.

HA210N06 MOSFET electrical specification description

In this section, we try to explain the electrical specification description of HA210N06 MOSFET.

Voltage specs

The terminal voltage of HA210N06 MOSFET, drain to source voltage is 60v, the gate to source voltage is 25v, and the gate threshold voltage is 2 to 4v, the terminal voltage specs show that it is a medium power supply application MOSFET device.

Current specs

The current specs of HA210N06 MOSFET drain current value is 130A and the pulsed drain current is 210A, the value shows that these MOSFETs are apt at UPS and switched-mode power supplies.

Dissipation specs

The power dissipation of value HA210N06 MOSFET is 220W, it is a larger value for a MOSFET device.

Drain to source on-state resistance

The drain to source on-state resistance value is 4mΩ for HA210N06 MOSFET, the on-state resistance of the MOSFET means the device’s overall resistance.

Junction temperature

The junction temperature of this MOSFET is –55 to +175℃

Reverse recovery time (trr)

The reverse recovery time of the HA210N06 MOSFET is 48ns, it is the amount of time needed to discharge before starting conducting.

Zero gate voltage drain current (I_DSS)

The zero gate voltage drain current value is 20uA.

Thermal resistance-junction to case (Rɵjc)

The thermal resistance of HA210N06 MOSFET is 0.68℃/W

HA210N06 MOSFET DATASHEET

If you need the datasheet in pdf please click this link

HA210N06 vs IXFK200N10P

The below listed the comparison of electrical specs of HA210N06 vs IXFK200N10P

Characteristics	HA210N06	IXFK200N10P
Drain to source breakdown voltage (VBR (DSS))	60V	100V
Gate to source voltage (Vgs)	25V	5V
Gate threshold voltage (Vg(th))	2 to 4V	20V
Drain current (Id)	130A	200A
Total gate charge (Qg)	135nC	235nC
Power dissipation (PD)	220W	830W
Junction temperature (TJ)	-55 to 175°C	175°C
Drain to source on-state resistance (RDS)	4MΩ	7.5MΩ
Rise time (trr)	48ns	60ns
Package	TO-3P	TO-264A

Characteristics curves of HA210N06 MOSFET

The figures show the output characteristics of HA210N06 MOSFET, the graph is plotted with drain current vs drain to source voltage.

At the different gate to source voltage ranges, the drain current increases at a rate and reaches an infinity range.

The figure shows the gate threshold voltage characteristics, the graph is plotted with threshold voltage vs junction temperature.

At a constant drain current, the threshold voltage will decrease before the initial stage and reaches a lower limit.

The figure shows the safe operating area of HA210N06 MOSFET, the graph is plotted with drain current vs drain to source voltage.

Applications of HA210N06 MOSFET

• Power supplies
• UPS
• Inverters
• Battery management system (BMS)