HA210N06 MOSFET specification
- It is an N-channel MOSFET device
- Drain to source voltage (VDSS) is 60V
- Gate to source voltage (Vgss) is +/- 25V
- Gate to the threshold voltage (Vgs (th)) is 2 to 4V
- Drain current (Id) is 130A
- Pulsed drain current (IDM) is 210A
- Power dissipation is (PD) is 220W
- Drain to source on-state resistance (RDS (ON)) 4mΩ
- Gate to body leakage current (IGSS) is 100nA
- Total gate charge (Qg) is 135nC
- Reverse recovery time (trr) is 48ns
- Thermal resistance junction to case (Rth j-c) is 68℃/W
- Junction temperature (TJ) is between -55 to 175℃
HA210N06 MOSFET Pinout
|Pin Number||Pin Name||Description|
|1||Gate||Gate will trigger the MOSFET device|
|2||Drain||In the drain terminal were current flows into the MOSFET|
|3||Source||In the source, terminal current flows out from the MOSFET|
HA210N06 MOSFET package
The HA210N06 MOSFET had the package of TO-3P it is a bulkier package that has a provision to attach a heat sink with it.
The TO-3P package is made with epoxy/plastic and metal material, the combination of both these materials will be good for heat resistance.
HA210N06 MOSFET electrical specification description
In this section, we try to explain the electrical specification description of HA210N06 MOSFET.
The terminal voltage of HA210N06 MOSFET, drain to source voltage is 60v, the gate to source voltage is 25v, and the gate threshold voltage is 2 to 4v, the terminal voltage specs show that it is a medium power supply application MOSFET device.
The current specs of HA210N06 MOSFET drain current value is 130A and the pulsed drain current is 210A, the value shows that these MOSFETs are apt at UPS and switched-mode power supplies.
The power dissipation of value HA210N06 MOSFET is 220W, it is a larger value for a MOSFET device.
Drain to source on-state resistance
The drain to source on-state resistance value is 4mΩ for HA210N06 MOSFET, the on-state resistance of the MOSFET means the device’s overall resistance.
The junction temperature of this MOSFET is –55 to +175℃
Reverse recovery time (trr)
The reverse recovery time of the HA210N06 MOSFET is 48ns, it is the amount of time needed to discharge before starting conducting.
Zero gate voltage drain current (IDSS)
The zero gate voltage drain current value is 20uA.
Thermal resistance-junction to case (Rɵjc)
The thermal resistance of HA210N06 MOSFET is 0.68℃/W
HA210N06 MOSFET DATASHEET
If you need the datasheet in pdf please click this link
HA210N06 vs IXFK200N10P
The below listed the comparison of electrical specs of HA210N06 vs IXFK200N10P
|Drain to source breakdown voltage (VBR (DSS))||60V||100V|
|Gate to source voltage (Vgs)||25V||5V|
|Gate threshold voltage (Vg(th))||2 to 4V||20V|
|Drain current (Id)||130A||200A|
|Total gate charge (Qg)||135nC||235nC|
|Power dissipation (PD)||220W||830W|
|Junction temperature (TJ)||-55 to 175°C||175°C|
|Drain to source on-state resistance (RDS)||4MΩ||7.5MΩ|
|Rise time (trr)||48ns||60ns|
Characteristics curves of HA210N06 MOSFET
The figures show the output characteristics of HA210N06 MOSFET, the graph is plotted with drain current vs drain to source voltage.
At the different gate to source voltage ranges, the drain current increases at a rate and reaches an infinity range.
The figure shows the gate threshold voltage characteristics, the graph is plotted with threshold voltage vs junction temperature.
At a constant drain current, the threshold voltage will decrease before the initial stage and reaches a lower limit.
The figure shows the safe operating area of HA210N06 MOSFET, the graph is plotted with drain current vs drain to source voltage.
Applications of HA210N06 MOSFET
- Power supplies
- Battery management system (BMS)