FQP27P06 MOSFET
FQP27P06 electrical specifications
- FQP27P06 is a P-channel QFET MOSFET device
- Drain to source voltage (VDS) is –60V
- Gate to source voltage (VGS) is +/-25V
- Gate to the threshold voltage (VGS (th)) is 2V to 4V
- Drain current (ID) is -27A
- Pulse drain current (IDM) is –108A
- Power dissipation (PD) is 120W
- Total gate charge (Qg) is 33 to 43nC
- Drain to source on-state resistance (RDS (ON)) 055Ω to 0.07Ω
- Rise time (tr) is 185 to 380ns
- Thermal resistance junction to case (Rth j-C) is 25℃/W
- Junction temperature (TJ) is between -55 to 175℃
- Body diode reverse recovery (trr) is 105ns
- Peak diode recovery (dv/dt) is –0V/ns
- Input capacitance is 1100 to 1400pf
- Output capacitance is 510 to 660pf
- Low gate charge
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175℃ maximum junction temperature rating
FQP27P06 Pinout
| Pin Number | Pin Name | Description |
| 1 | GATE | The gate terminal will be used to trigger the MOSFET device |
| 2 | DRAIN | The drain is the input terminal of the MOSFET |
| 3 | SOURCE | In the source terminal, current flows out from the MOSFET |
FQP27P06 package
FQP27P06 QFET MOSFET device has a TO-220 transistor device package, TO-220 is a high-power package used for power application devices.
TO-220 is a large component package made with epoxy material which provides higher temperature capacity.
TO-220 package also had the provision to attach a heat sink with it, because it is a through-hole device.
FQP27P06 electrical specification explanation/applications
In this section we explain the electrical specifications of the FQP27P06 QFET MOSFET device, this explanation is very useful for a better understanding of the device.
Voltage specs
The terminal voltage value of FQP27P06 QFET MOSFET is the drain-to-source voltage is -60V, the gate-to-source voltage is +/-25V, and the gate-to-source threshold voltage is -2.0V to -4.0V.
The terminal voltage values suggest that it is medium power MOSFET device used for power applications.
Current specs
The drain current value of FQP27P06 QFET MOSFET is -27A, the current value of the device shows the load capacity.
The pulsed drain current value is -108A, this current value of FQP27P06 MOSFET is calculated at a specific condition.
Dissipation specs
The dissipation ability of FQP27P06 MOSFET is 120W, this is mainly dependent on the device package.
Drain to source on-state resistance
The on-state resistance value of the FQP27P06 QFET transistor is 0.055 to 0.07Ω, the resistance value is important at the circuit level.
Junction temperature/ storage temperature
The maximum temperature value of the FQP27P06 transistor is between -55 to +175℃.
Thermal resistance junction to case
The thermal resistance value of FQP27P06 QFET MOSFET is 1.25℃/W.
Total gate charge
The total gate charge value of FQP27P06 is 33 to 43Nc.
Rise time
The rise time value of MOSFET is 185 to 380ns
Input capacitance
The input capacitance value of MOSFET is 1100 to 1400Pf, this value is important at the circuit level.
Output capacitance
The output capacitance value is 510 to 660pF.
FQP27P06 DATASHEET
If you need the datasheet in pdf please click this link
FQP27P06 EQUIVALENT
The FQP27P06 QFET MOSFET have equivalent devices such as AP9581GP, UTT50P10, FQP10N20, FQP10N60, FQP10N20, FQP10N20C and AP9581GP, each of them have almost same set of electrical specifications.
Most of the applications based on FQP27P06 QFET MOSFET are power-handling applications, so we need to check important specs of equivalent devices such as voltage specs, current specs, on-state resistance, and power dissipation value.
FQP27P06 vs FQP10N20
In the table below, we listed the electrical specifications of FQP27P06 vs FQP10N20. This comparison is very useful for better understating the device.
| Characteristics | FQP27P06 | FQP10N20 |
|---|---|---|
| Drain to source voltage (VDS) | -60V | 200V |
| Gate-to-source voltage (VGS) | +/-25V | +/-30V |
| The gate threshold voltage (VG(th)) | -2V to -4V | 3V to 5V |
| Drain current (ID) | -27A | 10A |
| Pulsed drain current | -108A | 40A |
| Total gate charge (Qg) | 33 to 43nC | 13.5 to 18nC |
| Power dissipation (PD) | 120W | 87W |
| Junction temperature (TJ) | -55 to +175°C | -55 to +150°C |
| Drain to source on-state resistance (RDS) | 0.055 to 0.07Ω | 0.28 to 0.36Ω |
| Thermal resistance | 1.25℃/W | 1.44℃/W |
| Rise time (tr) | 185 to 380ns | 90 to 190ns |
| Reverse recovery time (trr) | 105ns | 130ns |
| Input capacitance | 1100 to 1400pf | 510 to 670pf |
| Output capacitance | 510 to 660pf | 95 to 130pf |
| Package | TO-220 | TO-220 |
Characteristics curves of FQP27P06 QFET
The figure shows the on-region characteristics of FQP27P06 MOSFET, the graph plots with drain current vs drain to source voltage.
At the different gate-to-source voltage values, the drain current curve starts to increase from the lowest value towards a higher value with respect to drain-to-source voltage values.
The figure shows the maximum safe operating area characteristics of FQP27P06 QFET MOSFET, the graph plots with drain current vs drain to source voltage and on-state resistance, switching pulses, and temperature limits.
Applications of FQP27P06 MOSFET
- SMPS circuits
- Audio amplifier circuit
- DC motor control circuit
- Variable switching power applications
- Low voltage applications
- Automation applications
- DC/DC controller circuit
- High-efficiency switching circuit
- Power management in portable and battery applications
- Power supply circuits
- Battery charger circuit
- BMS applications
- Solar power supply circuit
- Motor controller circuit
