2SD2499/ D2499 transistor electrical specifications
- D2499 is a triple diffused silicon mesa NPN epitaxial type transistor device
- Collector to emitter voltage is 600V
- Collector to base voltage is 1500V
- Emitter to base voltage is 5V
- Collector current is 6A
- Pulsed collector current is 12A
- Base current is 3A
- Power dissipation is 50W
- DC current gain is 8 to 25hFE
- Transition frequency (FT) is 2MHz
- Junction temperature is between -55 to 150℃
- Collector to emitter saturation voltage (VCE (SAT)) is 5V
- Output capacitance is 95pF
- HIGH VOLTAGE
- Low saturation voltage
- High-speed switching
|Base terminal is the trigger for the device
|Current flows through the collector
|Current flows through the emitter
D2499 triple diffused transistor device has a TO-3P device package, it is the bulkier package.
TO-3P is a three-terminal through-hole package made with epoxy and metal material for higher temperature capacity.
The back portion of the TO-3P package is coated with metal for the heat transferring feature, so we can easily attach a heat sink with it for this provision.
D2499 transistor electrical specification & application note:
Here in this section, we explained the electrical specifications of the 2SD2499 transistor, this explanation is really useful for a better understanding of the MOSFET device.
The terminal voltage specifications of the 2SD2499 transistor are collector-to-base voltage is 1500V, collector-to-emitter voltage is 600V, and emitter-to-base voltage is 5V, they had the highest voltage values.
The collector-to-emitter saturation voltage value of the D2499 transistor is 5V, this is the switching voltage value of the transistor.
The collector current value of the D2499 transistor is 6A, this value is the maximum load capacity of the device.
The pulsed collector current value is 12A, this value is calculated at a specific condition.
The current values of this device made it used for some applications.
The power dissipation value of the 2SD2499 transistor is 50W, it is a product of the voltage and current values of the device.
DC current gain specs
The current gain value of the D2499 transistor is 8 to 25Hfe, this value is important for applications like amplifier circuits.
Transition frequency value of the D2499 transistor is 2MHz, this value had importance at the circuit level.
The maximum temperature value of the D2499 transistor is -55 to +150℃.
The output capacitance value of the D2499 transistor is 95pf, this value is important at circuits.
If you need the datasheet in pdf please click this link
The triple diffused high voltage D2499 transistor has equivalent devices such as 2SC5250, 2SC3896, 2SC3894, 2SC3897, 2SC5252, and 2SC5251, each of them had almost the same electrical specifications as the 2SD2499 transistor.
2SD2499 vs 2SC5250
Here in this section, we listed the electrical specifications of D2499 vs 2SC5250 transistors, this listing comparison is useful for a better understanding and is helpful in the replacement process.
Characteristics 2SD2499 2SC5250
Collector to base voltage (VCB) 1500V -
Collector to emitter voltage (VCE) 600V 1500V
Emitter to base voltage (VEB) 5V 6V
Collector to emitter saturation voltage (VCE (SAT)) 5V 5V
Collector current (IC) 6A 8A
Pulsed collector current 12A 16A
Power dissipation 50W 50W
Junction temperature (TJ) -55 to +150°C -55 to +150°C
Transition frequency (FT) 2MHZ -
Gain (hFE) 8 to 25hFE 6 to 25hFE
Output capacitance 95pF -
Package TO-3P TO-3P
D2499 transistor applications
- Horizontal deflection output for color TVs
- High-voltage DC and AC application circuits
- Motor driver circuits
- Audio amplifier circuits
- Driver loads
Characteristics curves of D2499 transistor
The figure shows the common emitter output characteristics of the 2SD2499 transistor, and the graph plots with collector current vs collector to emitter voltage.
At different base current values, the collector current curve increases with voltage values with respect to the collector-to-emitter voltage.
At higher collector current values, the curve is become more-straight, so the speed increases with base current values.
The figure shows common emitter DC current gain characteristics of 2SD2499 transistor, the graph plots with DC current gain vs collector current.
At a constant collector-to-emitter voltage value, the curve plots at two temperature values, the DC gain value increase from a shorter value toward a higher value and then dips at the end.
The figure shows the safe operating area characteristics of the D2499 transistor, the graph plots with collector current, collector-to-emitter voltage, switching pulses, and temperature value.