IRF9640 MOSFET IRF9640 specification IRF9640 is a P-channel silicon gate POWER MOSFET transistor device. Drain to source voltage (VDS) is -200V Gate to source voltage (VGS) is +/- 20V Gate to…
IRF510 MOSFET IRF510 electrical specifications IRF510 is an N-channel power MOSFET device Drain to source voltage (VDS) is 100V Gate to source voltage (VGS) is +/- 20V Gate to the threshold…
BUK453 MOSFET BUK453 electrical specification BUK453 is an N-channel enhancement mode MOSFET device Drain to source voltage (VDSS) is 100V Gate to source voltage (VGS) is +/- 30V Gate to the…
15N20 MOSFET 15N20 specification 15N20 is an enhancement N-channel POWER MOSFET device Drain to source voltage (VDS) is 200V Gate to source voltage (VGS) is +/- 30V Gate to the threshold…
2N7002e MOSFET 2N7002e specifications 2N7002e is an N-channel enhancement mode small signal MOSFET device Drain to source voltage (VDS) is 60V Drain-to-gate voltage (VDG) is 60V Gate to source voltage (VGS)…
IRF9530 MOSFET IRF9530 specification IRF9530 is a P-channel power MOSFET device Drain to source voltage (VDS) is -100V Gate to source voltage (VGS) is +/- 20V Gate to the threshold voltage…
IRF9240 mosfet IRF9240 specifications IRF9240 is a P-channel enhancement mode silicon gate POWER field effect transistor device. Drain to source voltage (VDS) is -200V Gate to source voltage (VGS) is +/-…
IRF3708 MOSFET IRF3708 specification IRF3708 is an N-channel POWER MOSFET device Drain to source voltage (VDS) is 30V Gate to source voltage (VGS) is +/- 12V Gate to the threshold voltage…
IRF830 MOSFET IRF830 specification IRF830 is fast switching N-channel POWER MOSFET device Drain to source voltage (VDS) is 500V Gate to source voltage (VGS) is +/- 20V Gate to the threshold…
FQP27P06 MOSFET FQP27P06 electrical specifications FQP27P06 is a P-channel QFET MOSFET device Drain to source voltage (VDS) is –60V Gate to source voltage (VGS) is +/-25V Gate to the threshold voltage…