C5198 transistor
C5198 transistor electrical specification
- 2SC5198 is an NPN bipolar junction transistor device
- Collector to emitter voltage is 140V
- Collector to base voltage is 140V
- Emitter to base voltage is 5V
- Collector current is 10A
- Base current is 1A
- Power dissipation is 100W
- DC current gain is 35 to 160hFE
- Current gain-bandwidth (FT) is 30MHz
- Junction temperature is between -55 to 150℃
- Collector to emitter saturation voltage (VCE (SAT)) is3 to 2V
- High breakdown voltage
- NPN triple diffused type transistor
C5198 transistor Pinout
| Pin Number | Pin Name | Description |
| 1 | Base | The base terminal is the trigger for the transistor |
| 2 | Collector | The collector terminal will act as the output of the trigger |
| 3 | Emitter | The emitter acts as the input for the transistor |
C5198 transistor package
The C5198 transistor device has TO-3P packages, it is a 3pin transistor package used for power amplifier applications.
TO-3P package is a through-hole bulkier package mainly used for POWER semiconductor devices, the heat resistance of the package is the main advantage, plastic and epoxy materials are used to make the body of the TO-3P package.
The backside of the TO-3P package is covered with metal, this covering will act as the heat sink and they transfer the heat towards the heat sink.
C5198 transistor explanation for electrical specification and application
In this section we try to explain the electrical characteristics of the C5198 transistor, this explanation will help us to know more about this transistor.
Voltage specs
The terminal voltage specs of the C5198 transistor are collector to base and collector to emitter voltage value is 140V and emitter to base voltage is 5V, the voltage specs of the transistor shown that these transistors are good at POWER amplifiers.
The collector to emitter saturation voltage value is 0.3V to 2V, it is the region switching speed of the transistor.
The voltage specifications of the C5198 transistor are higher, this is why these transistors are used in POWER amplifier applications.
Current specs
The collector current value is 10A, and the current value of a transistor shows the maximum load capacity of the transistor.
The current value shows that the C5198 transistor is capable of switching applications.
Dissipation specs
The power dissipation value of the C5198 transistor is 100W, it is the dissipation capacity of the transistor.
Current gain specs
The current gain value of the C5198 transistor is 33 to 160hFE, it is the amplification capacity of a transistor device.
Transition frequency
The bandwidth transition frequency value of the C5198 transistor is 30MHz, this transistor had a low-frequency range.
Junction temperature
The junction temperature is -55 to 150℃ for the transistor, it is the capacity of the device at the temperature change.
2SC5198/C5198 transistor DATASHEET
If you need the datasheet in pdf please click this link
C5198 transistor equivalent
The transistor devices such as 2SC2581, 2SC2706, 2SC2837, 2SC3907, 2SD1148, FJA4310, KTC5200, and KTC5242 are the C5198 transistor equivalent.
Most of the specifications of these listed transistors are the same as the C5198 transistor, so we can use those transistors as the equivalent for the C5198 transistor.
But we need to check and verify the PINOUT details of each transistor before the replacement process because applications based on these transistors are high voltage.
C5198 transistor complementary
The 2SC5198 NPN transistors had complimentary pair of 2SA1941 PNP transistors, both of these transistors combined to use at high wattage push-pull amplifier circuits.
C5198 vs C5200 vs 2SC2581
In the table, we listed the electrical specification comparison of C5198 vs C5200 vs 2SC2581, this is helpful for a better understanding and also for the replacement process.
| Characteristics | C5198 | C5200 | 2SC2581 |
|---|---|---|---|
| Collector to base voltage (VCB) | 140V | 230V | 200V |
| Collector to emitter voltage (VCE) | 140V | 230V | 140V |
| Emitter to base voltage (VEB) | 5V | 5V | 6V |
| Collector to emitter saturation voltage (VCE (SAT)) | 0.3 to 2V | 0.4 to 3V | 2V |
| Collector current (IC) | 10A | 15A | 10A |
| Power dissipation (PD) | 100W | 150W | 100W |
| Junction temperature (TJ) | -55 to +150°C | -55 to +150°C | -55 to +150°C |
| Transition frequency (FT) | 30MHZ | 30MHZ | 20MHZ |
| Gain (hFE) | 35 to 160hFE | 35 to 160hFE | 30hFE |
| Package | TO-3P | TO-264 | TO-3P |
C5198 transistor applications
- Suitable for use in 70W high fidelity audio amplifier output stage
- Power amplifier
- High voltage applications
- Switching applications
C5198 transistor characteristics
The figure shows the output characteristics of the C5198 transistor, the graph is plotted with collector current vs collector to emitter voltage.
In a varying base current, the collector current increases at a different level with respect to the collector to emitter voltages.
At the higher base current value, the collector current increases quickly with small variations at voltages.
The figure shows the DC current gain characteristics of the C5198 transistor, the graph is plotted with DC current gain vs collector current.
At a fixed collector to emitter voltage, the gain value of the transistor increases from a fixed value.
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