C1970 transistor specification
- C1970 is an NPN silicon power transistor device
- Collector to emitter voltage is 17V
- Collector to base voltage is 40V
- Emitter to base voltage is 4V
- Collector current is 6A
- Power dissipation is 5W
- DC current gain is 10 to 180hFE
- Current gain-bandwidth (FT) is 175MHz
- Junction temperature is between -55 to 150℃
- Thermal resistance, between junctions to the case is 25℃/W
- Output power is 1 to 1.2W
- High power gain
- High reliability
|Base terminal is used to trigger the transistor
|Current flow through the collector
|Current flows through the emitter
The C1970 transistor device has a TO-220AB package, it is a bulkier power transistor device.
TO-220AB transistor package is a through-hole type device, it is made of epoxy/plastic material which had higher temperature capacity and compactness as an electronic component.
C1970 transistor specification description/ application
Here in this section, we explain C1970 transistor specifications, the explanation is useful better understanding of the device.
The voltage specifications of the C1970 transistor are a collector-to-emitter voltage is 17V, a collector-to-base voltage is 40V and an emitter-to-base voltage is 4V, the specs show that it is a low-power device having amplifier applications.
The collector current specifications of the C1970 transistor is 0.6A, the lower load switching applications.
The dissipation ability of the C1970 transistor is 5W, it is mainly dependent on the device package.
Current gain specs
The DC current gain value of the C1970 transistor is 10 to 180hFE, it is the amplification ability of the device.
The frequency value of the C1970 transistor is 175MHz, the frequency value of this device.
The maximum temperature value of the C1970 transistor is -55 to 150℃, which is the heat capacity of the transistor.
The output power value of the C1970 transistor is 1 to 1.2W.
C1970 transistor DATASHEET
If you need the datasheet in pdf please click this link
C1970 transistor equivalent
C1970 transistor has equivalent devices such as 2SC1971, 2SC1972, 2SC100, 2SC1004, and 2SC1003, all of these devices have the same set of electrical specifications, so we can easily use them as the equivalent for the C1970 transistor.
The C1970 transistor specs such as dc current gain, frequency, and output power are very important for amplifier and audio applications.
C1970 vs 2SC1971
Here in the section table below we listed and compare both C1970 and 2SC1971 device specifications, this comparison is really useful for a better understanding of the transistor.
|Collector to base voltage (VCB)
|Collector to emitter voltage (VCE)
|Emitter to base voltage (VEB)
|Collector to emitter saturation voltage (VCE (SAT))
|Collector current (IC)
|Junction temperature (TJ)
|-55 to +150°C
|-55 to +150°C
|Thermal resistance is between the junction to case
|Transition frequency (FT)
|10 to 180hFE
|10 to 180hFE
|1 to 1.2W
|6 to 7W
The 2SC1970 and 2SC1971 transistors have the same set of electrical specifications, the 2SC1971 has higher values, so naturally, it has more applications.
C1970 transistor applications
- RF POWER amplifier circuit
- VHF band radio applications
- Radio circuits
- TV circuit applications
- Switching load applications