C1970 transistor

C1970 transistor
C1970 transistor

C1970 transistor specification

  • C1970 is an NPN silicon power transistor device
  • Collector to emitter voltage is 17V
  • Collector to base voltage is 40V
  • Emitter to base voltage is 4V
  • Collector current is 6A
  • Power dissipation is 5W
  • DC current gain is 10 to 180hFE
  • Current gain-bandwidth (FT) is 175MHz
  • Junction temperature is between -55 to 150℃
  • Thermal resistance, between junctions to the case is 25℃/W
  • Output power is 1 to 1.2W
  • High power gain
  • High reliability

C1970 Pinout

C1970 Pinout
C1970 Pinout
Pin Number Pin Name Description
1 Base Base terminal is used to trigger the transistor
2 Collector Current flow through the collector 
3 Emitter  Current flows through the emitter


C1970 package

The C1970 transistor device has a TO-220AB package, it is a bulkier power transistor device.

TO-220AB transistor package is a through-hole type device, it is made of epoxy/plastic material which had higher temperature capacity and compactness as an electronic component.  

C1970 transistor specification description/ application

Here in this section, we explain C1970 transistor specifications, the explanation is useful better understanding of the device.

Voltage specs

The voltage specifications of the C1970 transistor are a collector-to-emitter voltage is 17V, a collector-to-base voltage is 40V and an emitter-to-base voltage is 4V, the specs show that it is a low-power device having amplifier applications.

Current specs

The collector current specifications of the C1970 transistor is 0.6A, the lower load switching applications.

Dissipation specs

The dissipation ability of the C1970 transistor is 5W, it is mainly dependent on the device package.

Current gain specs

The DC current gain value of the C1970 transistor is 10 to 180hFE, it is the amplification ability of the device.

Transition frequency

The frequency value of the C1970 transistor is 175MHz, the frequency value of this device.

Junction temperature

The maximum temperature value of the C1970 transistor is -55 to 150℃, which is the heat capacity of the transistor.

Output power

The output power value of the C1970 transistor is 1 to 1.2W.

C1970 transistor DATASHEET

If you need the datasheet in pdf please click this link

C1970 transistor equivalent

C1970 transistor has equivalent devices such as 2SC1971, 2SC1972, 2SC100, 2SC1004, and 2SC1003, all of these devices have the same set of electrical specifications, so we can easily use them as the equivalent for the C1970 transistor.

The C1970 transistor specs such as dc current gain, frequency, and output power are very important for amplifier and audio applications.

C1970 vs 2SC1971

Here in the section table below we listed and compare both C1970 and 2SC1971 device specifications, this comparison is really useful for a better understanding of the transistor.

Collector to base voltage (VCB)     40V35V
Collector to emitter voltage (VCE)17V17V
Emitter to base voltage (VEB)4V4V
Collector to emitter saturation voltage (VCE (SAT))-      -
Collector current (IC)0.6A2A
Power dissipation5W12.5W
Junction temperature (TJ)-55 to +150°C-55 to +150°C
Thermal resistance is between the junction to case25℃/W10℃/W
Transition frequency (FT)175MHZ-
Gain (hFE)10 to 180hFE10 to 180hFE
Output power1 to 1.2W6 to 7W

The 2SC1970 and 2SC1971 transistors have the same set of electrical specifications, the 2SC1971 has higher values, so naturally, it has more applications.

C1970 transistor applications

  • RF POWER amplifier circuit
  • VHF band radio applications
  • Radio circuits
  • TV circuit applications
  • Switching load applications

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