BUZ91A MOSFET
BUZ91A MOSFET specification
- It is an N-channel Enhancement type MOSFET device
- Drain to source breakdown voltage (V BR (DSS)) is 600V
- Gate to source voltage (Vgs) is +/- 20V
- Gate to the threshold voltage (Vg (th)) is 1 to 4V
- Drain current (Id) is 8A
- Pulsed drain current (IDM) is 32A
- Power dissipation is (Pd) is 150W
- Drain to source on-state resistance (RDS (ON)) 9ohm
- Thermal resistance, chip case (Rth JC) ≤83K/W
- Zero gate voltage drain current (IDSS) 1 to 1uA
- Gate source leakage current (IGSS) 10 to 100nA
- Reverse recovery time (trr) is 480ns
- Rise time (tr) is 70 to 100ns
- Junction temperature (TJ) is between -55 to 150℃
BUZ91A MOSFET Pinout
| Pin Number | Pin Name | Description |
| 1 | Gate | Gate will trigger the MOSFET device |
| 2 | Drain | Current flows through the drain |
| 3 | Source | Current flows through the source |
BUZ91A MOSFET package
The device package used at BUZ91A MOSFET is TO-220AB, it is a package mainly used for high-power semiconductor devices.
The TO-220AB package is made with a combination of epoxy and plastic with a metal cover at the backside for heat sink attachment, most MOSFET devices need a heat sink and bulky package.
BUZ91A MOSFET electrical specification description
In this section we try to explain the electrical specification and application descriptions of BUZ91A MOSFET, it will be very helpful for circuit makers and also at replacement process.
Voltage specs
The drain to source breakdown voltage is 600v, the gate to source voltage is 20v, and the gate to source threshold voltage is between 2.1 to 4v, these value shows that BUZ91A MOSFET had higher voltage values.
Current specs
The drain current is 8A and the pulsed drain current is 32A, the drain current is the maximum load affordable by BUZ91A MOSFET.
Gate to the source leakage current
The gate to source leakage current value is 10 to 100nA, it is the leakage current value due to MOSFET resistance
Dissipation specs
The power dissipation of BUZ91A MOSFET is 150W, the applications based on this device are high power, so naturally, power dissipation will be high at BUZ91A MOSFET devices.
Drain to source on-state resistance
The on-state resistance value is 0.9ohm, it is the resistance offered by the MOSFET between drain to source terminals, lower the on-resistance value higher the power loss.
Junction temperature
The junction temperature of BUZ91A is -55 to +150℃.
Reverse recovery time (trr)
The reverse recovery time of BUZ91A MOSFET is 480ns
BUZ91A MOSFET DATASHEET
If you need the datasheet in pdf please click this link
BUZ91A MOSFET EQUIVALENT
The MOSFET devices such as BUZ100, BUZ101, BUZ100L, BUZ102, and BUZ102AL are the MOSFET equivalents of BUZ91A.
The electrical specifications and Pin-out details of each of these MOSFETs are the same as BUZ91A, so we can easily replace them.
But voltage and current values are slightly different, so we need to check and verify before a replacement.
BUZ91A vs BUZ100 vs BUZ102AL
The below table listed the electrical specifications of three MOSFET devices, such as BUZ91A vs BUZ100 vs BUZ102AL.
| Characteristics | BUZ91A | BUZ100 | BUZ102AL |
|---|---|---|---|
| Drain to source breakdown voltage (VBR (DSS)) | 600V | 50V | 50V |
| Gate to source voltage (Vgs) | 20V | 20V | 14V |
| Gate threshold voltage (Vg(th)) | 2.1 to 4V | 4V | 2V |
| Drain current (Id) | 8A | 60A | 42A |
| Power dissipation (PD) | 150W | 250W | 200W |
| Junction temperature (TJ) | 150°C | 150°C | 150°C |
| Drain to source on-state resistance (RDS) | 0.9ohm | 0.018ohm | 0.028ohm |
| Rise time (tr) | 70 to 100ns | 100ns | 135ns |
| Package | TO-220AB | TO-220AB | TO-220AB |
Each of these MOSFET devices had the almost same electrical specifications, the BUZ91A is the most powerful MOSFET device among these three.
The BUZ100 MOSFET had a higher current and power dissipation capacity, so higher load applications use BUZ100 MOSFET.
Characteristics curves of BUZ91A MOSFET
The figure shows the output characteristics, the curve is plotted with drain current vs drain to source voltage, as we can see when we increase the voltage value the current value increases its portion.
At the higher voltage ranges, the current values increase like a straight line without slight variations.
The figure shows the drain to source on state resistance curve, the graph is plotted with on-state resistance vs junction temperature.
At the constant voltage and current values, the drain to source on-state resistance will increase proportionally to junction temperature.
