BUZ91A MOSFET specification

  • It is an N-channel Enhancement type MOSFET device
  • Drain to source breakdown voltage (V BR (DSS)) is 600V
  • Gate to source voltage (Vgs) is +/- 20V
  • Gate to the threshold voltage (Vg (th)) is 1 to 4V
  • Drain current (Id) is 8A
  • Pulsed drain current (IDM) is 32A
  • Power dissipation is (Pd) is 150W
  • Drain to source on-state resistance (RDS (ON)) 9ohm
  • Thermal resistance, chip case (Rth JC) ≤83K/W
  • Zero gate voltage drain current (IDSS) 1 to 1uA
  • Gate source leakage current (IGSS) 10 to 100nA
  • Reverse recovery time (trr) is 480ns
  • Rise time (tr) is 70 to 100ns
  • Junction temperature (TJ) is between -55 to 150℃


Pin Number Pin Name Description
1 Gate Gate will trigger the MOSFET device   
2 Drain  Current flows through the drain
3 Source Current flows through the source


BUZ91A MOSFET package

The device package used at BUZ91A MOSFET is TO-220AB, it is a package mainly used for high-power semiconductor devices.

The TO-220AB package is made with a combination of epoxy and plastic with a metal cover at the backside for heat sink attachment, most MOSFET devices need a heat sink and bulky package.

BUZ91A MOSFET electrical specification description

In this section we try to explain the electrical specification and application descriptions of BUZ91A MOSFET, it will be very helpful for circuit makers and also at replacement process.

Voltage specs

The drain to source breakdown voltage is 600v, the gate to source voltage is 20v, and the gate to source threshold voltage is between 2.1 to 4v, these value shows that BUZ91A MOSFET had higher voltage values.

Current specs

The drain current is 8A and the pulsed drain current is 32A, the drain current is the maximum load affordable by BUZ91A MOSFET.

Gate to the source leakage current

The gate to source leakage current value is 10 to 100nA, it is the leakage current value due to MOSFET resistance   

Dissipation specs

The power dissipation of BUZ91A MOSFET is 150W, the applications based on this device are high power, so naturally, power dissipation will be high at BUZ91A MOSFET devices.

Drain to source on-state resistance

The on-state resistance value is 0.9ohm, it is the resistance offered by the MOSFET between drain to source terminals, lower the on-resistance value higher the power loss.

Junction temperature

The junction temperature of BUZ91A is -55 to +150℃.

Reverse recovery time (trr)

The reverse recovery time of BUZ91A MOSFET is 480ns



If you need the datasheet in pdf please click this link


The MOSFET devices such as BUZ100, BUZ101, BUZ100L, BUZ102, and BUZ102AL are the MOSFET equivalents of BUZ91A.

The electrical specifications and Pin-out details of each of these MOSFETs are the same as BUZ91A, so we can easily replace them.

But voltage and current values are slightly different, so we need to check and verify before a replacement.

BUZ91A vs BUZ100 vs BUZ102AL

The below table listed the electrical specifications of three MOSFET devices, such as BUZ91A vs BUZ100 vs BUZ102AL.

Drain to source breakdown voltage (VBR (DSS))600V50V50V
Gate to source voltage (Vgs)20V20V14V
Gate threshold voltage (Vg(th))2.1 to 4V4V2V
Drain current (Id)8A60A42A
Power dissipation (PD)150W250W200W
Junction temperature (TJ) 150°C150°C150°C
Drain to source on-state resistance (RDS)0.9ohm0.018ohm0.028ohm
Rise time (tr)70 to 100ns100ns135ns

Each of these MOSFET devices had the almost same electrical specifications, the BUZ91A is the most powerful MOSFET device among these three.

The BUZ100 MOSFET had a higher current and power dissipation capacity, so higher load applications use BUZ100 MOSFET.

Characteristics curves of BUZ91A MOSFET

output characteristics
output characteristics

The figure shows the output characteristics, the curve is plotted with drain current vs drain to source voltage, as we can see when we increase the voltage value the current value increases its portion.

At the higher voltage ranges, the current values increase like a straight line without slight variations.

drain to source on state resistance curve
drain to source on state resistance curve

The figure shows the drain to source on state resistance curve, the graph is plotted with on-state resistance vs junction temperature.

At the constant voltage and current values, the drain to source on-state resistance will increase proportionally to junction temperature.

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