BUZ11 is a medium-power N-channel semiconductor MOSFET device, which is been mainly used for switching and driving applications.
- BUZ11 is an N-channel enhancement mode MOSFET device
- Drain to source voltage (VDS) is 50V
- Gate to source voltage (VGS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is 1V, 3V & 4V
- Drain current (ID) is 30A
- Pulsed drain current (IDM) is 120A
- Power dissipation (PD) is 75W
- Drain to source on-state resistance (RDS (ON)) 03Ω to 0.04Ω
- Input capacitance (Ciss) is 1500 to 2000pf
- Output capacitance (Cob) is 750 to 1100pf
- Junction temperature/ storage temperature is between -55 to 150℃
- Thermal resistance, junction to case (Rth J-C)is 67℃/W
- Body diode recovery time (trr) is 200ns
- Rise time (tr) is 70 to 110ns
- 100% avalanche tested
- Repetitive avalanche data at 100%
- Low gate charge
- High current capability
- SOA is power dissipation
- Nano-second switching speed
- Linear transfer characteristics
- High input impedance
- Majority carrier device
|Pin Number||Pin Name||Description|
|1||GATE||The gate terminal is used to trigger the MOSFET|
|2||DRAIN||The drain terminal is the input of the MOSFET|
|3||SOURCE||In the source, terminal current flows out from the MOSFET|
The BUZ11 is a medium-power semiconductor device having a TO-220AB package.
TO-220AB is made with epoxy/plastic material which had higher temperature capacity and compactness as a material.
BUZ11 n-channel MOSFET electrical specification explanation
In this section we explain the electrical specifications of BUZ11 MOSFET, this explanation is really helpful for the replacement process.
The voltage specs of BUZ11 n-channel MOSFET are a drain to source voltage is 50V, the gate to source voltage is +/-20V, and the Gate threshold voltage is 2.1V, 3V, and 4V.
The voltage specifications of BUZ11 n-channel MOSFET will show that it is a medium-power device having low voltage values.
The collector current value of BUZ11 N-channel MOSFET is 30A, it the load capacity of the device.
The pulsed collector current value of BUZ11 n-channel MOSFET is 120A, the pulsed current capacity is three times higher than the current value.
The power dissipation of BUZ11 is 75W, it is mainly dependent on the component package.
Drain to source on-state resistance
The drain to source on-state resistance is 0.03 to 0.04Ω, it is the total resistance value of this device
Junction temperature/ storage temperature
The junction temperature and storage temperature value of the BUZ11 n-channel MOSFET is –55 to +150℃.
The input capacitance of BUZ11 N-channel MOSFET is 1500 to 2000Pf, it is the total capacitance value offered by the MOSFET device.
The output capacitance of the BUZ11 N-channel MOSFET is between 750 to 1100pf
If you need the datasheet in pdf please click this link
The semiconductor devices such as BUZ11A, IRLZ24N, IRLZ34N, STP32N06L, STP36N06, and BUK555-60A are the equivalent MOSFET devices of BUZ11 MOSFET. All of these devices have the same set of electrical specifications, so we can easily use them as a replacement for circuits.
BUZ11 vs BUZ11A vs IRLZ34
In this table, we listed the electrical specifications of BUZ11, BUZ11A, and IRLZ34.
|Drain to source voltage (VDS))||50V||50V||60V|
|Gate to source voltage (Vgs)||+/-20V||+/-20V||+/-10V|
|Gate threshold voltage (Vg(th))||2.1V, 3V and 4V||2.1V, 3V and 4V||1V to 2V|
|Drain current (ID)||30mA||26A||30A|
|Pulsed drain current (IDM)||120A||110A||110A|
|Power dissipation (PD)||75W||88W||88W|
|Junction temperature (TJ)||-55 to +150°C||-55 to +175°C||-55 to +175℃|
|Thermal resistance, junction to case||1.67℃/W||1.7℃/W||1.7℃/W|
|Drain to source on-state resistance (RDS)||0.03 to 0.04Ω||0.045Ω to 0.055Ω||0.050Ω|
|Body diode recovery||200ns||85ns||120 to 180ns|
|Input capacitance||1500 to 2000pf||1400pf||1600pf|
|Output capacitance||750 to 1100pf||200pf||660pf|
Applications of BUZ11
- Relay driver
- Motor driver
- Switching regulator
- Switching converter
- High-speed driver applications
- Low-gate driver applications
- Integrated and solenoid & relay driver applications
- DC/DC converter and AC/AC converter
- Motor control circuit
- Automation applications
- Lamp driver circuit
Graphical characteristics of BUZ11 n-channel MOSFET
The figure shows the output characteristics of BUZ11 n-channel MOSFET, and the graph plots with drain current vs drain to source voltage.
At constant dissipation value, the different gate to source voltages the drain current value increases and become constant at a value with respect to voltage values.
The figure shows the safe operating area characteristics of BUZ11 MOSFET, graph plots at drain current vs drain to source voltage, on-state resistance, and switching speed.
The figure shows the lamp driver circuit using BUZ11 MOSFET, circuit consists of a diode and MOSFET with a lamp.
As when the supply flows through the circuit, the diode is used to drive MOSFET and it will control the current and drive the lamp.