BUK453 electrical specification
- BUK453 is an N-channel enhancement mode MOSFET device
- Drain to source voltage (VDSS) is 100V
- Gate to source voltage (VGS) is +/- 30V
- Gate to the threshold voltage (VGS (th)) is 1V & 4V
- Drain current (ID) is 14A
- Pulsed drain current (IDM) is 56A
- Power dissipation (PD) is 75W
- Drain to source on-state resistance (RDS (ON)) 16Ω to 0.2Ω
- Input capacitance (Ciss) is 660 to 825pf
- Output capacitance (Cob) is 140 to 200pf
- Junction temperature/ storage temperature is between -55 to +175℃
- Thermal resistance, junction to ambient (Rth J-A) is 60℃/W
- Body diode recovery time (trr) is 90ns
- Rise time (tr) is 90ns
- High-speed switching
- Low RDS (ON) easy drivers for cost-effective applications
|The gate terminal is used to trigger the MOSFET
|The drain terminal is the input of the MOSFET
|In the source, terminal current flows out from the MOSFET
BUK453 power MOSFET has TO-220C bulkier semiconductor electronic package.
TO-220C is a three-terminal package made with epoxy/plastic material this is very useful for making higher temperature capacity devices, it is also a through-hole package.
TO-220C had the provision to attach a heat sink with it, this gives extra support for the BUK453 MOSFET device.
BUK453 MOSFET electrical specification explanation
Here in this section, we explain the electrical specifications of BUK453 MOSFET, this detailed explanation is really useful for a better understanding of the device.
The voltage specifications of BUK453 MOSFET are a drain-to-source voltage of 100V, drain-to-gate voltage of 100V and gate-to-source voltage is +/-30V.
Terminal voltage specs show that BUK453 MOSFET is a high-power device used for power applications.
The gate-to-source threshold voltage specs are 2.1V to 4V, this is the switching voltage value of the device.
The drain current value of BUK453 MOSFET is 14A, the current value indicates the load capacity of the device.
The power dissipation of BUK453 MOSFET is 75W, this value mainly depends on the device package.
Drain to source on-state resistance
The drain to source on-state resistance of BUK453 MOSFET is 0.16 to 0.2Ω, this value is useful at the circuit level.
Junction temperature/ storage temperature
The maximum temperature value of BUK453 MOSFET is -55 to +150℃.
The input capacitance value of BUK453 MOSFET is 660 to 825pF, this value had importance at circuits.
The output capacitance value of BUK453 MOSFET is 140 to 200Pf.
The rise time value of BUK453 MOSFET is 25 to 40ns
If you need the datasheet in pdf please click this link
The MOSFET devices such as IRF530, BUZ72, STP13N10, 2SK3158, 2SK3479, 2SK1347 and MTP12N10E, these are the equivalent devices of BUK453 MOSFET.
The electrical specifications of these devices are almost the same as BUK453 MOSFET, so we can them as the equivalent at some of the circuits.
Before the replacement process, we need to check and verify the specs such as voltage, current, power dissipation, and PINOUT details.
BUK453 vs 2SK3138 vs BUZ72
Here in this table, we compare the electrical specifications of BUK453, 2SK3138, and BUZ72, this specs listing comparison is helpful for a better understanding of the replacement process.
|Drain to source voltage (VDS))
|Gate to source voltage (Vgs)
|Gate threshold voltage (Vg(th))
|2.1V & 4V
|1V & 2.5V
|1V to 2.5V
|Drain current (ID)
|Pulsed drain current (IDM)
|Power dissipation (PD)
|Junction temperature (TJ)
|-55 to +175°C
|-55 to +150°C
|-55 to +150℃
|Thermal resistance, junction to ambient
|Drain to source on-state resistance (RDS)
|0.16Ω to 0.2Ω
|40mΩ to 63mΩ
|Body diode recovery
|660 to 825pf
|140 to 200pf
Applications of BUZ453
- SMPS circuit
- Motor control circuit
- Welding circuit
- DC/DC and AC/DC converter circuit
- General purpose switching applications
- BMS circuit applications
- UPS circuit
- Solar applications
- Audio amplifier circuit
Graphical characteristics of BUZ453 MOSFET
The figure shows the output characteristics of the BUZ453 MOSFET device, the graph plots the drain to source voltage vs drain current.
At the different gate-to-source voltage values, the drain current graphical curve increases from the lowest value to a higher value with respect to drain-to-source voltage.
The figure shows the on-state resistance characteristics of BUK453 MOSFET, the graph plots with on-state resistance vs drain current.
At different gate-to-source voltage values, the resistance increases with respect to the drain current.
The figure shows the safe operating area characteristics of BUK453 MOSFET, the graph plots with drain current vs drain to source voltage, on-state resistance, and switching speed.
From this graph we can easily decode different working aspects of the BUK453 MOSFET device, these pieces of information are very useful for making circuits.
BUK453 battery checker circuit
The figure shows the LM358 transducer amplifier unit and BUK453 MOSFET-based battery checker circuit.