BU407 transistor electrical specification
- BU407 is an NPN epitaxial silicon transistor device
- Collector to emitter voltage is 150V
- Collector to base voltage is 330V
- Emitter to base voltage is 6V
- Collector current is 7A
- Pulsed collector current is 10A
- Base current is 4A
- Power dissipation is 60W
- Current gain bandwidth (FT) is 10MHz
- Junction temperature is between -65 to 150℃
- Collector to emitter saturation voltage (VCE (SAT)) is 1V
- Output capacitance (Cob) is 80pF
- High voltage switching device
|Base terminal is the trigger for the transistor
|Current flow through the collector
|Current flows through the emitter
BU407 transistor package
BU407 is an NPN high-voltage transistor that has a TO-220 package, it is a bulkier package.
TO-220 is a three-terminal bulkier package made with epoxy/plastic material, this will provide temperature capacity and less weight for the device.
TO-220 had a coating at the backside for heat transferring, we can attach heat sink heat with the package because it is the through-hole package.
BU407 transistor electrical specification description & application
Here we explain the electrical specifications of the BU407 transistor, the explanation is helpful for a better understanding.
The voltage specifications of the BU407 transistor are collector to emitter is 150V, emitter to base voltage is 6V, and collector to the base is 330V, which is the terminal voltage specs.
The collector-to-emitter saturation voltage of the BU407 transistor is 1V, it is the switching voltage for the device.
The voltage specifications of the BU407 transistor shows, it is a high-voltage device which having many high-voltage applications.
The collector current of the BU407 transistor is 7A, which is the maximum load capacity of the transistor.
The pulsed collector current BU407 transistor is 10A, it is the current value that is calculated at a specific condition.
The base current of the BU407 transistor is 4A, it is the current value to trigger the transistor.
The dissipation ability of the BU407 transistor is 60W, it is the combination of the voltage and current value of the device.
The transition frequency value of the BU407 is 10MHz.
Junction temperature/ storage temperature
The temperature value of the BU407 transistor is -65 to 150℃.
The output capacitance value of the BU407 transistor is 80Pf
If you need the datasheet in pdf please click this link
BU407 transistor have equivalent transistor device such as 2SD1069, BU106DP, 2SD823, 2SD1163, and BU408, each of the device have the same set of electrical specifications.
BU407 is a HIGH voltage device, so they had more high voltage and switching applications.
Before the replacement of the BU407 transistor, we need to check the voltage specs, PINOUT details, and current value of the devices.
BU407 vs BU109 vs 2SD1069
|Collector to base voltage (VCB)
|Collector to emitter voltage (VCE)
|Emitter to base voltage (VEB)
|Collector to emitter saturation voltage (VCE (SAT))
|Collector current (IC)
|Base current (IB)
|Pulsed collector current (ICM)
|Junction temperature (TJ)
|-65 to +150°C
|-65 to +150°C
|-55 to +150°C
|Transition frequency (FT)
BU407 transistor applications
- HIGH voltage applications
- Switching applications
BU407 transistor characteristics curves
The graph shows the output characteristics of the BU407 transistor, and the graph plots with collector current vs collector to emitter voltage.
At different base current values from lower values to higher, the collector current increases its position.
The graph shows the DC current gain characteristics of the BU407 transistor and the graph plots with DC current gain vs collector current.
At constant voltage values, the DC current gain starts from a particular value and then increases, then it touches a limit and drops towards the lower value.
The graph shows the safe operating area characteristics of the BU407 transistor, the graph plots with collector current vs collector to emitter voltage.
At the graphical curve, different specs are been mentioned such as switching speed, dissipation limit, temperature value, and voltage value.