BU406 transistor
BU406 transistor electrical specification
- BU406 NPN POWER BJT transistor device
- Collector to emitter voltage (VCEO) is 200V
- Collector to emitter voltage (VCEV) is 400V
- Collector to base voltage (VCB) is 400V
- Emitter to base voltage (VEB) is 6V
- Collector current (IC) is 7A
- Pulsed collector current (ICM) is 15A
- Power dissipation is 60W
- Transition frequency (FT) is 10MHz
- Junction temperature/storage temperature is between-55 to +150℃
- Thermal resistance junction to the case is 208℃/W
- Collector to emitter saturation voltage (VCE (SAT)) is 1V
- Switching speed is 75us
- Output capacitance (Cob) is 80pF
- High voltage device
- Fast switching speed
- Low saturation voltage
BU406 transistor Pinout
| Pin Number | Pin Name | Description |
| 1 | Base | Base terminal is used to trigger the transistor |
| 2 | Collector | Current flow through the collector |
| 3 | Emitter | Current flows through the emitter |
BU406 package
The BU406 POWER transistor device has a TO-220 package, it is a three-terminal bulkier package.
TO-220 package is made of epoxy/plastic material, this will provide higher temperature capacity and compactness for the semiconductor material device.
TO-220 is a through-hole package, so the backside is coated with metal for heat transferring toward the heat sink.
BU406 transistor electrical specification & application note
Here in this section, we try to explain the important specifications of the BU406 transistor for a better understanding.
Voltage specs
The voltage specs of the BU406 transistor are collector to base voltage is 400V, collector to emitter is 200V, and emitter to base voltage is 6V, it is the terminal voltage specs of the device.
The collector-to-emitter saturation voltage of the BU406 transistor is 1.5V, it is the voltage value important at the starting point of the transistor.
Overall voltage specifications of the BU406 transistor are explained with two specs terminal voltage and saturation voltage, from the values we can see it is a moderate voltage device which having power supply applications.
Current specs
The current value of the transistor indicates the maximum load capacity of the device, the collector current value of the BU406 transistor is 7A.
The pulsed collector current value is 15A, this particular value is calculated at a specific condition.
The current specifications of the BU406 transistor show, it is a higher current transistor having multiple drivers and load applications.
Dissipation specs
The dissipation ability of the BU406 transistor is 60W, it is the product of voltage and current values.
The Power dissipation of the transistor is mainly dependent on the device package.
Transition frequency
The transition frequency value of the BU406 is 10MHz, the frequency value is important for circuit applications.
Junction temperature/ storage temperature
The junction and storage temperature range of the BU406 transistor is -65 to +150℃.
Thermal resistance between junctions to case
The thermal resistance, junction to case value of the BU406 transistor is 208℃/W.
Output capacitance
The output capacitance value of the BU406 transistor is 80Pf, the capacitance of the transistor is important at the circuit level.
BU406 DATASHEET
If you need the datasheet in pdf please click this link
BU406 equivalent
BU406 NPN transistors have equivalent devices such as BU407, 2SD823, 2SD1163, BU124, and BU408, these devices have the same set of electrical specifications as BU406 transistor, so we can easily use them in the replacement process.
The main applications based on BU406 transistor is at CRT TVs’ horizontal section and humidifier devices, so this is why we need to verify some specs before the replacement process, such as voltage, current, switching speed, and capacitance value.
BU406 vs 2SD823 vs BU124
| Characteristics | BU406 | 2SD823 | BU124 |
|---|---|---|---|
| Collector to base voltage (VCB) | 400V | 200V | 350V |
| Collector to emitter voltage (VCEO) | 200V | 90V | 150V |
| Collector to emitter voltage (VCEV) | 400V | ||
| Emitter to base voltage (VEB) | 6V | 7V | 8V |
| Collector to emitter saturation voltage (VCE (SAT)) | 1V | 1.5V | 1 to 2V |
| Collector current (IC) | 7A | 6A | 10A |
| Pulsed collector current | 15A | 10A | 15A |
| Power dissipation | 60W | 40W | 50W |
| Junction temperature (TJ) | -65 to +150°C | -55 to +150°C | -65 to +150°C |
| Transition frequency (FT) | 10MHZ | 15MHZ | 4MHz |
| Gain (hFE) | - | 20hFE | 5 to 20hFE |
| Output capacitance | 80pF | - | - |
| Noise figure | - | - | - |
| Package | TO-220 | TO-220C | TO-3PN |
BU406 transistor applications
- Used at CRT TVs at the horizontal deflection output stage
- High-speed switching applications
- High voltage applications
- Audio amplifier circuit
- Humidifier
BU406 transistor characteristics curves
The graph shows the DC current gain characteristics of the BU406 transistor, the graph plots with DC current gain vs collector current.
At a constant collector-to-emitter voltage value, two sets of gain curves are plotted in terms of temperature values.
At each temperature value, the DC gain is almost the same, but the gain value is slightly different and initially, it increases from a higher value and dips at the end.
The graph shows the safe operating area characteristics of the BU406 transistor, the graph is the normal plot with collector current vs collector to emitter voltage.
The safe operating curves are been indicated with some of the specs such as temperature, switching speed, and resistance value.
