BS170 MOSFET specification
- BS170 is an N-channel enhancement mode field-effect transistor MOSFET device
- Drain to source voltage (VDSS) is 60V
- Drain to gate voltage (VDGR) is 60V
- Gate to source voltage (VGSS) is +/- 20V
- Gate to the threshold voltage (VGS (th)) is 8V to 2.1V
- Drain current (Id) is 200mA
- Pulsed drain current (IDM) is 500mA
- Power dissipation is (PD) is 830mW
- Drain to source on-state resistance (RDS (ON)) 2 to 5Ω
- Zero gate voltage drain current (IDSS) is 10uA
- Rise time (tr) is 34ns
- Thermal resistance junction to ambient (Rth j-A) is 150℃/W
- Junction temperature (TJ) is between -55 to 150℃
- Turn-ON/OFF time is 10ns
- High-density cell design for low on-state resistance
- Voltage controlled small signal switch
- High saturation current capability
- D-MOS technology
BS170 MOSFET Pinout
|Pin Number||Pin Name||Description|
|1||Drain||In the drain terminal were current flows into the MOSFET|
|2||Gate||A Gate terminal is used to trigger the MOSFET|
|3||Source||In the source, terminal current flows out from the MOSFET|
BS170 MOSFET package
The BS170 MOSFET had the package of TO-92, it is a common type of device package mainly used for general-purpose transistors.
TO-92 package is made with highly heat resistant material called epoxy, these material had other advantages such as it had higher compactness and less weight.
The BS170 MOSFET are been also made in surface mount type, on these transistor cases epoxy material is used to increase heat capacity.
SMD version of BS170 MOSFET
The MMBF170 (SOT-23) is the SMD version of BS170 MOSFET, most of the electrical characteristics of the SMD version transistor are the same as BS170 MOSFET.
BS170 MOSFET electrical specification explanation
In this section we try to explain the important electrical characteristics of BS170 MOSFET, this description is really helpful for a better understanding of BS170 MOSFET.
The terminal voltage specs of BS170 MOSFET is such as drain to source voltage is 60V, drain to gate voltage is 60V, the gate to source voltage is 20V, and the gate threshold voltage is 0.8V to 2.1V, the voltage specs show that BS170 MOSFET had most of the applications with medium power driver circuits.
The drain current value of this MOSFET is 500mA, a device current value that stated the load capacity of that transistor.
The pulsed drain current value is 1200mA, which is the current value produced by MOSFET at the lowest temperature value, and this variation is shown at safe operating characteristics of BS170 MOSFET.
This particular MOSFET had most of the applications based on driver and controlling, on these types of circuits current value will be an important factor to consider.
The power dissipation value of BS170 MOSFET is 830mW, it is the power dissipation capacity of a MOSFET device in a thermal condition.
Drain to source on-state resistance
The drain to source on-state resistance is 1.2 to 5Ω, it is the overall resistance offered by the MOSFET.
The junction temperature of the BS170 MOSFET is -55 to +150℃.
Thermal resistance junction to ambient
The thermal resistance of BS170 MOSFET is 150℃/W
BS170 MOSFET DATASHEET
If you need the datasheet in pdf please click this link
BS170 MOSFET EQUIVALENT
The MOSFET devices such as 2N7000, IRLML2502, IRFZ44, and 2N7002 are the equivalents of BS170 MOSFET.
The electrical specifications of each of these MOSFETs are the same, so we can easily use them as the replacement for BS170 MOSFET.
But we need to check and verify the PINOUT details of each MOSFET device before the replacement process.
BS170 vs 2N7000
In this table comparison, we listed the electrical specifications of BS170 vs 2N7000 MOSFET devices, this comparison is really helpful to know more about that device.
|Drain to source voltage (VDSS))||60V||60V|
|Gate to source voltage (Vgs)||20V||20V|
|Gate threshold voltage (Vg(th))||0.8 to 2.1V||0.8 to 2.1V|
|Drain current (ID)||500mA||200mA|
|Power dissipation (PD)||830mW||400mW|
|Junction temperature (TJ)||-55 to +150°C||-55 to +150°C|
|Drain to source on-state resistance (RDS)||1.2 to 5Ω||1.2 to 5Ω|
|Turn ON/OFF time||10ns||10ns|
The main electrical specifications of this two BS170 vs 2N7000 MOSFETs are the same, only the drain current value is higher for BS170.
Other than that power dissipation and the thermal resistance value is higher for BS170 MOSFET, this is why they had more applications than most the MOSFET devices.
Characteristics curves of BS170 MOSFET
The figure shows the on-region characteristics of the BS170 MOSFET device, the graph is plotted with the drain to source current vs drain to source voltage.
The characteristics are plots under a fixed gate to source voltage, we can see that the drain to source current will be increased from the least value but at the initial stages, the current increases after a curve.
The figure shows the transfer characteristics of the BS170 MOSFET device, the graph is plotted with drain current vs gate to source voltage.
At a fixed drain to source voltage, the drain current increases after a small gap, the temperature variation due to the working of the device is also mentioned.
The figure shows the on-state resistance characteristics of BS170 MOSFET, the graph is plotted with the drain to source on-state resistance vs drain current.
The characteristics are plots with different gate to source voltage values, the on-state resistance value increases from lower to higher.
LED DRIVER CIRCUIT USING BS170 MOSFET
The figure shows the LED driver circuit using BS170 MOSFET, the circuit consists of BS170 MOSFET, LED, and a push-pull switch.
When the switch closes, the gate triggers and MOSFET gets ON and produces output.
The output of the MOSFET turns ON the LED.
Applications of BS170 MOSFET
- Mainly used for switches for low voltage and low current applications
- Servo motor control system
- Power MOSFET gate drivers
- Other switching applications
- Battery operating system
- Solid-state relays
- Solenoid drivers
- Lamp drivers
- Display drivers
- Direct logic level interface TTL/CMOS
- Audio amplifier
- Output of microcontrollers