BF495 transistor electrical specification
- BF495 is an NPN silicon medium-frequency transistor device
- Collector to emitter voltage (VCE) is 20V
- Collector to base voltage (VCB) is 30V
- Emitter to base voltage (VEB) is 5V
- Collector current is 30mA
- Pulsed collector current is 30mA
- Power dissipation is 300W
- DC current gain is 35 to 125hFE
- Junction temperature is between -65 to 150℃
- Thermal resistance is between, junction to ambient 420℃/W
- Transition frequency is 120MHz
- Low current
- Low voltage
|Pin Number||Pin Name||Description|
|1||Base||Base terminal is used to trigger the device|
|2||Emitter||Current flows through the emitter|
|3||Collector||Current flow through the collector|
BF495 medium frequency transistor has a TO-92 device package, it is a general-purpose semiconductor device package.
TO-92 is a three-terminal package made with epoxy/plastic material, which will provide higher temperature capacity and the shape and size of the package made them used for small-scale circuit applications.
BF495 transistor specification description & application note:
Here in this section, we explain the electrical specifications of the BF495 transistor, this detailed explanation is really useful for a better understanding of the device.
The terminal voltage value of the BF495 transistor is a collector of emitter voltage is 20V, a collector-to-base voltage is 30V and a base-to-emitter voltage is 5V, the voltage specs indicate it is a low-voltage device used for general-purpose applications.
Both the current values such as collector current and pulsed collector current value is 30mA, and the current value is the maximum load capacity of the device.
The applications such as drivers and oscillator circuits have important for this value.
The power dissipation value of the BF495 transistor is 300mW, this value is calculated with the product of voltage and current values.
Current gain specs
The DC current gain value of the BF495 transistor is 35 to 125Hfe, this value is important for applications like amplifier circuits.
The junction temperature and storage temperature value of the BF495 transistor is -65 to +150℃.
The thermal resistance value of the BF495 transistor is 420K/W.
The transition frequency value of the BF495 transistor is 120MHz, this value had importance at the circuit level.
If you need the datasheet in pdf please click this link
BF495 medium frequency transistor has equivalent devices such as BF494, 2N9018, C3355, BF199, 2N2219, 2N3904, and BC547, each of them have the same set of electrical specifications, so we easily replacement them with BF495.
BF495 transistors have audio-based applications, so we need to check and verify specs like voltage, current, frequency, and PINOUT details, this is very useful for the replacement process.
BF495 vs 2N2219
Here in the table below, we listed the electrical specifications of BF495 vs 2N2219 transistors, this listing comparison is really useful for a better understanding of the device.
Characteristics BF495 2N2219
Collector to emitter voltage (VCE) 20V 30V
Collector to base voltage (VCB) 30V 60V
Emitter to base voltage (VEB) 5V 5V
Collector to emitter saturation voltage (VCE (SAT)) - 0.4 to 0.5V
Collector current (IC) 30mA 800mA
Pulsed collector current (ICM) 30mA -
Power dissipation 300W 0.8W
Junction temperature (TJ) -65 to +150°C -55 to +200°C
Thermal resistance 420K/W 59℃/W
Transition frequency (FT) 120MHz -
Gain (hFE) 35 to 125hFE 2.5 to 12hFE
Package TO-92 TO-39
- HF applications in radio and television receivers
- FM transmitter circuit
- Low-noise AM mixer
- Oscillator circuit
- Amplifier of FM/AM receiver circuit
- Preamp circuits
- FM sender circuit