BD679 transistor
BD679 transistor electrical specification
- BD679 is an NPN medium-power silicon Darlington transistor device
- Collector to emitter voltage (VCE) is 80V
- Collector to base voltage (VCB) is 80V
- Emitter to base voltage (VEB) is 5V
- Collector current is 4A
- Base current is 1A
- Power dissipation is 40W
- DC current gain is 750hFE
- Junction temperature is between -55 to 150℃
- Thermal resistance between, Junction-to-case is 13℃/W
- Collector to emitter saturation voltage (VCE (SAT)) is5V
- Transition frequency is 450MHz
- Good DC gain linearity
- High transistor frequency device
BD679 PINOUT
| Pin Number | Pin Name | Description |
| 1 | Emitter | Current flows through the emitter |
| 2 | Collector | Current flow through the collector |
| 3 | Base | The base terminal is used to trigger the transistor |
BD679 package
BD679 Darlington transistor device has TO-225 & SOT-32 package, it is a small size component package made of epoxy/plastic and coated with metal which is act as a heat sink for dissipation ability.
TO-225/SOT-32 is a through-hole device package that had the provision to attach a heat sink with it, BD679 transistor device are been mainly used for small circuit applications, so TO-225/SOT-32 device package will support them to build small circuits.
BD679 electrical specification description/ application
In this section we explain the electrical specifications of the BD679 transistor, this explanation will give us a better idea about the device and it will help us to know about the applications based on this transistor.
Voltage specs
The voltage specs of the BD679 transistor are collector to emitter voltage is 80V, collector to base voltage is 80V, and emitter to base voltage is 5V.
The collector-to-emitter saturation voltage is 2.5V, which is the switching voltage value of the device.
The voltage specifications of the BD679 transistor show that it is a general-purpose medium voltage device having switching and power applications.
Current specs
The current specifications of the BD679 transistor are collector current is 4A, which is the maximum load capacity of the device.
The base current value of the BD679 transistor is 1A, it is the switching current value of the transistor.
The current specifications of the BD679 transistor indicate it is a medium-power device which having the driver and switching applications.
Dissipation specs
The power dissipation value of the BD679 transistor is 40W, this value mainly depends on the device package.
Current gain specs
The DC current gain value of the BD679 transistor is 750hFE, it is the ability of the transistor at the amplifier and battery charging applications.
Maximum temperature
The maximum temperature value of the BD679 transistor is between -55 to 150℃, it is a combination of junction temperature and storage temperature.
Thermal resistance
The thermal resistance value of the BD679 transistor is between, Junction-to-case, it is 3.13℃/W.
Transition frequency
The transition frequency value of the BD679 transistor is 450MHz, it is an important factor in amplifier applications.
BD679 DATASHEET
If you need the datasheet in pdf please click this link
BD679 equivalent
BD679 transistors have equivalent devices such as 2N6039, 2SD1210, 2SC2825, 2SD1515, BD779, MJE802, and BD681, each of these devices has the same set of electrical specifications.
The specifications such as voltage specs, current specs, DC current gain, and transition frequency are important for amplifications and charger applications, so check and verify them before the replacement process.
BD679 complementary
BD679 NPN transistor has complementary pair BD680 PNP transistor, both of them have the same and opposite electrical specifications, so we can use them at push-pull and Darlington pair applications.
BD679 vs BD681 vs 2SD1210
Here in the table below we list and compare the transistor BD679, BD681, and 2SD1210, this comparison table is very helpful for a better understanding of the device.
| Characteristics | BD679 | BD681 | 2SD1210 |
|---|---|---|---|
| Collector to emitter voltage (VCE) | 80V | 100V | 100V |
| Collector to base voltage (VCB) | 80V | 100V | 150V |
| Emitter to base voltage (VEB) | 5V | 5V | 8V |
| Collector to emitter saturation voltage (VCE (SAT)) | 2.5V | 2.5V | 1.5V |
| Collector current (IC) | 4A | 4A | 10A |
| Power dissipation | 40W | 1.25W | 80W |
| Junction temperature (TJ) | -55 to +150°C | -55 to +150°C | -55 to +150°C |
| Transition frequency (FT) | 450MHz | - | - |
| Gain (hFE) | 750hFE | 750hFE | 1000hFE |
| Package | TO-225/SOT-32 | TO-225 | TO-3PN |
BD679 applications
- Linear and switching instrumental equipment applications
- General-purpose amplifier applications
- BMS circuit
- Motor driver circuit
- Battery charger circuit applications
- Preamp circuit applications
Graphical characteristics of BD679 transistor
The figure shows the DC current gain characteristics of the BD679 transistor, the plots with dc current gain vs collector current.
At constant collector-to-emitter voltage values, the gain value increases from the lowest value to a higher value and at the end, it again bends down.
The figure shows the collector-to-emitter saturation voltage value of the BD679 transistor, the graph plots the collector-to-emitter saturation voltage vs collector current.
At a constant DC current gain value, the saturation voltage value is plotted at different temperature values.
