BD136 transistor electrical specification
- BD136 is a PNP epitaxial silicon transistor device
- Collector to emitter voltage (VCE) is -45V
- Collector to base voltage (VCB) is -45V
- Emitter to base voltage (VEB) is –5V
- Collector current is -1.5A
- Pulsed collector current is -3.0A
- Base current is –5A
- Power dissipation is 5W
- DC current gain is 25 to 250hFE
- Junction temperature is between -55 to 150℃
- Collector to emitter saturation voltage (VCE (SAT)) is -0.5V
- Complementary low voltage transistor
- Simple to handle
- Low saturation voltage
- Wide safe operating area
- Simple driver requirement
- Medium power transistor device
BD136 transistor Pinout
|Pin Number||Pin Name||Description|
|1||Emitter||Current flows through the emitter|
|2||Collector||Current flow through the collector|
|3||Base||The base terminal is used to trigger the transistor|
BD136 transistor package
The BD136 transistor had the TO-126 package, it is a power transistor package mainly used for medium power devices.
TO-126 is a three-terminal rectangular-shaped package made with epoxy material for heat resistance property. It is a through-hole package, so which is why the back side of the package is coated with metal for heat transferring towards the heat sink.
BD136 transistor electrical specification description/ application
In this section we try to explain the electrical specifications of the BD136 transistor device, it is very useful for a better understanding of this transistor device.
The terminal voltage specs of this transistor are collector to base voltage is -45V, collector to emitter voltage is -45V, and emitter to base voltage is -5V.
The collector to emitter saturation voltage is -0.5V, it is the voltage always less than the base voltage and it is the region switching voltage value.
Overall voltage specifications of BD136 transistor indicate, that they had applications in project-based and small circuits.
The collector current value is -1.5A, this is the maximum load capacity of the transistor, and the circuit had a load under this limit.
The pulsed collector current value is -3.0A, and the pulsed collector current value is been calculated at a specific condition temperature is been at the lowest value.
The base current value is -0.5A, the base current value is the maximum triggering current value of the BD136 transistor.
The current values of the BD136 transistor show that it is a device used for many current related applications.
The power dissipation of the BD136 transistor is 12.5W, it is the power dissipation of the device.
The BD136 is a medium-power device mainly used for multiple applications, so the TO-126 package will give it great support.
Current gain specs
The current gain value of the BD136 transistor is 25 to 250hFE, the amplification and voltage regulation based on this transistor is limited because of the low DC current gain values.
The junction temperature and operating temperature BD136 transistor are between -65 to 150℃.
The thermal resistance of the BD136 transistor case is 3.125℃/W
BD136 transistor DATASHEET
If you need the datasheet in pdf please click this link
BD136 transistor equivalent
The transistors such as BD138, BD140, MJE235, BD180, S8550, TIP42, BD229, BD227, MJE711, BD170, and MJE252 are the equivalent transistors of the BD136 device. The electrical specifications of these transistors are the same as the BD136 transistor.
We can replace these transistors on the portion of the BD136 transistor for some applications, but we need to check all the electrical specifications and PINOUT details of the device before the replacement.
BD136 complementary pair
The NPN transistors such as BD135, BD137, and BD139 are the complementary transistor of the PNP BD136 transistor.
We can make Darlington pair and push-pull circuit networks with complementary pairs.
SMD version transistor of BD136 transistor
The BCP51 (SOT-223) is the SMD version transistor of the BD136 transistor, almost all the electrical specifications of this transistor are the same.
BD136 vs BD132 vs MJE252
In this table, we try to list the electrical specifications of BD136, BD132, and MJE252 transistors, this is helpful for the replacement process.
|Collector to emitter voltage (VCE)||-45V||-45V||-80V|
|Collector to base voltage (VCB)||-45V||-45V||-80V|
|Emitter to base voltage (VEB)||-5V||-4V||-7V|
|Collector to emitter saturation voltage (VCE (SAT))||-0.5V||-0.3 to -1.2V||-0.3V|
|Collector current (IC)||-1.5A||-3A||-4A|
|Junction temperature (TJ)||-55 to +150°C||-65 to +150°C||-65 to +150°C|
|Transition frequency (FT)||-||-||2MHz|
|Gain (hFE)||25 to 250hFE||20 to 40hFE||25hFE|
BD136 transistor applications
- Medium power linear and switching applications
- Audio amplifier applications
- Load driver circuits
- Power supply circuits
- Battery charger circuits
- Motor driver circuits
- Impedance buffering circuits
- H-bridge circuits
- Comparator circuits
- Oscillator circuits
- Current mirror circuits
- Multi-vibrator circuits
- TV circuits
- High fidelity amplifier circuits
- High-power relay circuits
- Microcontroller circuits
Characteristics curves of BD136 transistor
The figure shows the DC current gain characteristics of the BD136 transistor, the graph is plotted with DC current gain vs collector current.
At a fixed collector to emitter voltage, the gain value increase from the highest value and parabolically decreases towards the end with respect to collector current.
The figure shows the collector to emitter saturation voltage characteristics of the BD136 transistor, the graph is plotted with the collector to emitter saturation voltage vs collector current.
At two different base current values, the saturation voltage produces an inverted parabolic shape with respect to the collector current.
BD136 transistor-based alarm sound generator circuit
The figure shows the alarm sound generator circuit, the circuit consists of 555 IC and BD136 transistor.
The circuit works exactly like a multi-vibrator and makes the sound as an alarm, using BD136 transistor and 555 timer IC works as the multi-vibrator.