BC847 transistor
BC847 transistor electrical specification
- BC847 is an NPN epitaxial BJT silicon general purpose transistor device
- Collector to emitter voltage is 45V
- Collector to base voltage is 50V
- Emitter to base voltage is 6V
- Collector current is 100mA
- Power dissipation is 310mW
- DC current gain is 110 to 800hFE
- Current gain-bandwidth (FT) is 300MHz
- Junction temperature is between -65 to 150℃
- Collector to emitter saturation voltage (VCE (SAT)) is 90 to 600mV
- Noise figure (NF) is 2 to 10dB
- Output capacitance (Cob) is 5 to 6pF
- Input capacitance (Cib) is 9pF
- Thermal resistance, junction ambient is 403℃/W
- SMD plastic package
- Three different gain selectors
BC847 transistor Pinout
| Pin Number | Pin Name | Description |
| 1 | Base | Base is used to trigger the transistor device |
| 2 | Emitter | Current flows through the emitter |
| 3 | Collector | Current flow through the collector |
BC847 transistor package
The BC847 transistor has SOT-23/SOT-323 SMD package, it is a surface mount device package (SMD). The SOT-23/SOT323 SMD packages are been made with epoxy/plastic materials for heat resistance properties.
The BC847 transistor is an SMD version of the BC547 transistor, the power dissipation of the BC847 transistor is lesser than BC547, and this is because of the usage of SMD SOT-23 and SOT-323 packages.
Marking the case
The BC847 transistor component had a “BC547” marking on its case, it is an SMD version transistor, so the marking is basically with different names and numbers.
BC847 transistor electrical specification description/ application
In this section we try to explain the electrical specifications of the BC847 SMD version transistor, this explanation is really helpful for a better understanding of this transistor device.
Voltage specs
The terminal voltage specs of the BC847 transistor are collector to base voltage is 50V, collector to emitter voltage is 45V and emitter to base voltage is 6V, it is the basic component voltage specs.
The collector to emitter saturation voltage is 90 to 600mV, it is the mode switching voltage of the device.
The voltage specifications of the BC847 transistor show that it is a general-purpose device mainly used for basic circuits.
Current specs
The collector current value of the BC847 transistor is 100mA, it is the maximum capacity of the device.
The current specs of the BC847 transistor give us an idea that it is a general-purpose device mainly used for low-power applications.
Dissipation specs
The power dissipation of the BC847 transistor is 310mW, a device power dissipation mainly depends on the package used for that device.
We know BC847 is an SMD version transistor, this is why it had a low power dissipation value than the BC547 transistor device.
Current gain specs
The current gain value of the BC847 transistor is 110 to 800hFE, and the DC current value is been mainly useful for amplification and regulator applications.
Transition frequency
The bandwidth transition frequency value of the BC847 transistor is 300MHz, it is the frequency range of the transistor used in audio applications.
Junction temperature
With the junction temperature of -65 to 150℃, the heat capacity of the transistor is mainly dependent on the case and operating temperature limit of the component.
Noise figure
The noise figure value of the transistor is 2 to 10dB
Output capacitance
The output capacitance value of the BC847 transistor is 3.5 to 6pF
Input capacitance
The input capacitance value of the BC847 transistor is 9pF
BC847 transistor DATASHEET
If you need the datasheet in pdf please click this link
BC847 transistor equivalent
The transistor devices such as 2SC3912, 2SC3913, BC845, MMBT3904, MMBT2222A, FMMTA05, KST05, and SMBTA06 are the SMD version equivalents of the BC847 SMD transistor.
Most transistors had the same electrical specs as the BC847 transistor, the only difference is in the power dissipation value.
Before the replacement process, we need to check and verify the electrical specifications and PINOUT details of these transistor devices.
BC847 complementary pair
The BC847 NPN SMD transistor had PNP complementary pair transistors such as BC856, BC857, BC858, and BC860.
These PNP SMD transistors had the same electrical specifications as the BC847 transistor, so we use them as the complement pair in some applications.
BC847 vs KST05 vs BC850
In this table, we list the electrical specifications of BC847, KST05, and BC850 SMD transistors.
This comparison is really helpful for a better understanding and uses these details for the replacement process.
| Characteristics | BC847 | KST05 | BC850 |
|---|---|---|---|
| Collector to base voltage (VCB) | 50V | 60V | 50V |
| Collector to emitter voltage (VCE) | 45V | 60V | 45V |
| Emitter to base voltage (VEB) | 6V | 4V | 5V |
| Collector to emitter saturation voltage (VCE (SAT)) | 90 to 600mV | 0.25V | 90 to 600mV |
| Collector current (IC) | 100mA | 500mA | 100mA |
| Power dissipation | 310mW | 350mW | 250mW |
| Junction temperature (TJ) | -65 to +150°C | -55 to +150°C | -65 to +150°C |
| Transition frequency (FT) | 300MHZ | 100MHZ | 100MHz |
| Gain (hFE) | 110 to 800hFE | 50hFE | 200 to 800hFE |
| Output capacitance | 3.5 to 6pF | - | - |
| Noise figure | 2 to 10dB | - | 4dB |
| Package | SOT-23/SOT-323 | SOT-23 | SOT-23 |
Most of the electrical specifications of these three SMD version transistors are the same, BC857 and BC850 transistors had the same important specs, the only difference is power dissipation, transition frequency, and noise figure.
And the KST05 is the SMD equivalent of the KSP05 transistor, so the power dissipation value is different from KSP05, but for the BC847 transistor, it is a different component with higher values.
BC847 transistor applications
- General-purpose switching applications
- Amplifier circuit applications
Characteristics curves of BC847 SMD transistor
The figure shows the static characteristics of the BC847 transistor, the characteristics curve is plotted with collector current vs collector to emitter voltage.
At different base current values, the collector current produces a linear curve with respect to the collector to emitter voltage.
The collector current increases with the increase of base current and the voltage value decrease at the end.
The figure shows the DC current gain characteristics of the BC847 transistor, the graph is plotted with DC current gain vs collector current.
At different temperature ranges and fixed collector to an emitter voltage value, the DC current gain increases with respect to collector current and dips at the end.
The figure shows the collector to emitter saturation voltage characteristics of the BC847 transistor, the graph is plotted with the collector to emitter saturation voltage vs collector current.
At fixed current values, the saturation voltage characteristics of BC847 form inverted parabolic curves of different values.
