- BC817 is an NPN general-purpose SMD transistor device
- Collector to emitter voltage is 45V
- Collector to base voltage is 50V
- Emitter to base voltage is 5V
- Collector current is 500mA
- Power dissipation is 460mW
- DC current gain is 250 to 600hFE
- Current gain-transition frequency (FT) is 100MHz
- Junction temperature is between -55 to 150℃
- Thermal resistance junction to ambient is 272℃/W
- Collector to emitter saturation voltage (VCE (SAT)) is7V
- Output capacitance (Cob) is 10pF
- Medium power amplifier device
- SMD LOW power device
|Base is used to trigger the transistor device
|Current flows through the emitter
|Current flow through the collector
The BC817 SMD transistor is a low-power general purpose transistor having SMD package SOT-23, it is a basic component package for a common transistor device.
SOT-23 SMD package is a three-terminal device that is made of epoxy/plastic material having high temperature withstanding capacity and it provides less weight for the semiconductor component package.
SOT-23 is a compact device package, this will help the component for use in many applications.
BC817 SMD transistor electrical specification description/ application
In this section, we try to explain the electrical specifications of the BC817 SMD transistor.
The voltage specs of BC817 SMD transistor are collector to emitter voltage is 45V, collector to base voltage is 50V, and emitter to base voltage is 5V.
The Collector to emitter saturation voltage is 0.7V, the voltage value indicates the region switching.
Overall voltage specifications of BC817 SMD transistor show that it is a low-power device with many applications.
The current value of the BC817 SMD transistor is 500mA, and the current value of the device shows the maximum load capacity.
The power dissipation of the BC817 transistor is 460mW, dissipation ability of the device shows the power withstanding of the package.
Current gain specs
The current gain value of the BC817 transistor is 250 to 600Hfe, it is the ability of the transistor to reproduce gain at the operation.
The transition frequency value of the BC817 transistor is 100MHz, it is the maximum frequency range of the device at the circuits.
Junction temperature/ operating temperature
The junction temperature/operating temperature of the device is -55 to +150℃.
The output capacitance value of the BC817 SMD transistor is 10pF
BC817 transistor DATASHEET
If you need the datasheet in pdf please click this link
BC817 transistor equivalent
The transistor devices such as FMMT619, FMMTA05, KST05, 2SC3913, 2SC3915, and BC177B are the equivalent transistors of the BC817 SMD transistor.
Each of the SMD transistor devices has a similar set of electrical specifications, so we can easily use it on the circuit at the place of the BC817 transistor device.
We need to check and verify the important specifications such as voltage, PINOUT, and DC current gain before the replacement process.
BC817 SMD transistor complementary pair
The BC817 SMD NPN transistor has complementary PNP pair BC807, the electrical specification of this transistor is similar and opposite.
BC817 vs BC847 vs MMBTA05
In this comparison table, we compare the electrical specifications of BC817, and BC847 devices, this is very useful for better understanding.
|Collector to base voltage (VCB)
|Collector to emitter voltage (VCE)
|Emitter to base voltage (VEB)
|Collector to emitter saturation voltage (VCE (SAT))
|200 to 900mV
|Collector current (IC)
|Junction temperature (TJ)
|-55 to +150°C
|-65 to +150°C
|-55 to +150°C
|Transition frequency (FT)
|250 to 600hFE
|110 to 800hFE
|110 to 800hFE
|3.5 to 6pf
We can see in the comparison table each of these transistor devices has a similar set of electrical specifications.
BC817 SMD transistor applications
- Automotive and other applications
- Switching applications
- Preamp circuit
- High-frequency switching applications
Characteristics curves of BC817 SMD NPN transistor
The figure shows the DC current gain characteristics of BC817 SMD NPN transistor, the graph is plotted with dc current gain vs collector current.
At a constant collector to an emitter voltage value, on three different temperature values, the current value is been calculated with respect to the collector current.
The figure shows the collector to emitter saturation voltage characteristics of the BC817 transistor, the graph is plotted with the collector to emitter saturation voltage vs collector current.
At a constant base current value, the saturation voltage value increases from a lower value to a higher value with respect to collector current.
The figure shows the safe operating area characteristics of the BC817 transistor, the graph is plotted with collector current vs collector to emitter voltage and thermal limits, and switching speed.