BC560 transistor
BC560 specification
- BC560 PNP epitaxial silicon transistor device
- Collector to emitter voltage is -45V
- Collector to base voltage is -50V
- Emitter to base voltage is –5V
- Collector current is -100mA
- Power dissipation is 500mW
- DC current gain is 110 to 800hFE
- Current gain-bandwidth transition frequency (FT) is 150MHz
- Junction temperature is between -65 to 150℃
- Collector to emitter saturation voltage (VCE (SAT)) is -250 to -650mV
- Noise figure is 2 to 2.0dB
- High voltage
- Low noise
BC560 Pinout
| Pin Number | Pin Name | Description |
| 1 | Collector | Current flow through the collector |
| 2 | Base | Base terminal is used to trigger the device |
| 3 | Emitter | Current flows through the emitter terminal |
BC560 package
The BC560 PNP transistor has a TO-92 less weight package, and TO-92 is a three-terminal lite-weighted device package.
TO-92 is made of epoxy/plastic material, which provides higher temperature capacity and compactness to the package.
TO-92 is a compact package and has a moderate range of temperature capacity, so we can easily use it for small circuits and heavy applications
BC560 electrical specification description/application notes:
Here in this section we explain the main electrical specifications of the BC560 transistor, this explanation is really useful for a better understanding and it is helpful for the replacement process.
Voltage specs
The voltage specifications of the BC560 transistor are collector to base voltage is -50V, collector to emitter voltage is -45V, and emitter to base voltage is 5V, which is the terminal voltage specs of the device.
The collector-to-emitter saturation voltage specs of the BC560 transistor are -250 to -650Mv.
The terminal voltage and saturation switching values show that it is a moderate voltage range device which having mini audio applications.
Current specs
The collector current value of the BC560 transistor is -100Ma, the current value indicates the load capacity of the transistor.
Dissipation specs
The power dissipation of the BC560 transistor is 500mW, it is the product of the voltage and current values of the transistor.
Current gain specs
The DC current gain of the BC560 transistor is 110 to 800hFE, the gain value is the amplification factor of the device.
Transition frequency
The transition frequency of the BC560 transistor is 150MHz, the frequency value is very important in audio-related circuit applications.
Junction temperature/ storage temperature
The junction temperature and storage temperature of the BC560 transistor is -65 to +150.
Noise figure
The noise figure of the BC560 transistor is 1.2 to 2.0dB, the noise capacity is the factor of the audio circuits
Output capacitance
The output capacitance value of BC560 is 6pF
BC560 DATASHEET
If you need the datasheet in pdf please click this link
BC560 equivalent
BC560 PNP transistor has equivalent devices such as BC556, BC557, MPSA18, 2N2907, S8550, and 2N5087, each of the devices have the same set of electrical specification used for the replacement of the circuits.
BC560 transistors have audio and signal amplification applications, so we need to check and verify voltage, DC current gain, frequency, and PINOUT details.
BC560 complementary pair
The BC560 PNP transistor has complementary pairs BC547, BC548, and BC550 NPN transistors, each of them having the same and opposite set of electrical specifications. We can use NPN and PNP complementary pairs in push-pull circuit applications.
BC560 SMD VERSION transistor
BC560 transistor devices have SMD version transistor devices such as BC857 (SOT-23), BC860 (SOT-23), and BC857WC (SOT-323), each of these SMD transistors have the same important specifications, but the power dissipation specifications and PINOUT details are different.
BC560 vs BC307 vs BC556
Here we list and compare the BC560, BC307, and BC556 transistor devices, this comparison is really useful for the replacement process of these devices.
| Characteristics | BC560 | BC307 | BC556 |
|---|---|---|---|
| Collector to base voltage (VCB) | -50V | - | -80V |
| Collector to emitter voltage (VCE) | -45V | VCES = | -65V |
| Emitter to base voltage (VEB) | -5V | -5V | -5V |
| Collector to emitter saturation voltage (VCE (SAT)) | -250 to -650mV | -0.5 to -0.3V | -250 to -650mV |
| Collector current (IC) | -100mA | -100mA | -100mA |
| Power dissipation | 500mW | 500mW | 300mW |
| Junction temperature (TJ) | -65 to +150°C | -55 to +150°C | -65 to +150℃ |
| Transition frequency (FT) | 150MHz | 130MHz | 150MHz |
| Gain (hFE) | 110 to 800hFE | 120 to 800hFE | 110 to 800hFE |
| Noise figure | 1.2 to 2dB | 10dB | 2 to 10Db |
| Output capacitance | 6pF | 6pF | 6pF |
| Package | TO-92 | TO-92 | TO-92 |
BC560 transistor applications
- Gain audio application circuit
- Sensor circuit applications
- Darlington pair circuit
- Signal amplifier circuit
- RF applications
- Mic amplifier circuit applications
- Less noise audio amplifier circuit applications
BC560 transistor characteristics curves
The graph shows the static output characteristics of the BC560 transistor, the graph plots with collector current vs collector to emitter voltage.
At different base current values, the output curve increases and become constant with respect to the collector-to-emitter voltage values, and at the end, the current value will increases.
The graph shows the DC current gain characteristics of the BC560 transistor, the graph plots with dc current gain vs collector current.
The dc gain value increases from a point towards a higher value and decreases at the end with respect to collector current values.
