BC338 silicon transistor
- BC338 is an NPN epitaxial silicon transistor device
- Collector to emitter voltage (VCEO) is 25V
- Collector to emitter voltage (VCES) is 30V
- Collector to base voltage (VEB) is 5V
- Collector current is 800mA
- DC current gain is 100 to 630FE
- Transition frequency (FT) is 100MHz
- Junction temperature is between -55 to 150℃
- Collector to emitter saturation voltage (VCE (SAT)) is7 to 1.2V
- Output capacitance (Cob) is 12pF
|Pin Number||Pin Name||Description|
|1||Collector||Current flow through the collector|
|2||Base||Base terminal is used to trigger the device|
|3||Emitter||Current flows through the emitter|
BC338 low power transistor has a TO-92 general purpose package, it is a three-terminal package.
TO-92 through-hole package is made of epoxy/plastic material which provides higher temperature capacity and compactness for the electronic component.
BC338 electrical specification description & application notes:
Here in this section, we try to explain the electrical specifications of the BC338 transistor, this detailed explanation is very useful for better understanding and helpful at the replacement process.
The terminal voltage specifications of the BC338 transistor are collector-to-emitter voltage is 30V & 25V and emitter-to-base voltage is 5V.
The collector-to-emitter saturation voltage of the BC338 transistor is 0.7V and 1.2V, it is the switching voltage value of the transistor.
The voltage specifications of the BC338 transistor indicate it is a low-power transistor having general-purpose applications.
The collector current value of the BC338 transistor is 800mA, the current value indicates the load capacity.
Current gain specs
The DC current gain value of the BC338 transistor is between 100 to 630Hfe.
Transition frequency value of the BC338 transistor is 100MHz, the frequency is mainly used at the circuit level.
Junction temperature/ storage temperature
Maximum temperature value of the BC338 transistor is -55 to +150℃.
The output capacitance value of the BC338 transistor is 12Pf.
If you need the datasheet in pdf please click this link
BC338 transistor have equivalent devices such as BC337, 2N4401, S8050, 2N3705, 2N7051, SS9013, 2N3706, and BC877, each of these transistor device have the same set of electrical specifications.
The specs such as voltage, DC current gain, and transition frequency are important for switching and amplifier applications, so we need to check and verify them before the replacement process.
BC338 NPN transistors have BC328 and BC327 complementary PNP transistor devices, and each of them has an opposite set of electrical specifications.
BC338 SMD EQUIVALENT
BC338 transistor have SMD equivalent devices such as BC818 (SOT-23), BC818W (SOT-323), and BCX20 (SOT-23), each of the SMD transistors have the same set of electrical specifications.
BC338 vs 2N4401 vs SS8050
Characteristics 2N4401 BC338 SS8050
Collector to base voltage (VCB) 60V 30V 40V
Collector to emitter voltage (VCE) 40V 25V 25V
Emitter to base voltage (VEB) 6V 5V 6V
Collector to emitter saturation voltage (VCE (SAT)) 0.4 to 0.75V 0.7V to 1.2V 0.5V
Collector current (IC) 600mA 800mA 1.5A
Power dissipation 625mW - 1W
Junction temperature (TJ) -55 to +150°C -55 to +150°C -65 to +150°C
Transition frequency (FT) 250MHZ 100MHZ 100MHz
Gain (hFE) 20 to 300hFE 100 to 630hFE 40 to 300hFE
Output capacitance 6pF 12Pf 9pF
Noise figure - - -
Package TO-92 TO-92 TO-92
- Switching applications
- Amplifier circuit applications
- AF driver stage circuit
- The low power output stage
- Darlington pair circuit applications
- Pre-amp circuit
- Sensor circuit