BC327 transistor electrical specification
- BC327 is a PNP general-purpose bipolar junction silicon transistor device
- Collector to emitter voltage (VCEO) is –45V
- Collector to emitter voltage (VCES) is –50V
- Emitter to base voltage (VEB) is –5V
- Collector current is -800mA
- Power dissipation is 625mW
- DC current gain is 60 to 630hFE
- Current gain-bandwidth (FT) is 100MHz
- Junction temperature is between -55 to 150℃
- Collector to emitter saturation voltage (VCE (SAT)) is -0.7V
- Output capacitance (Ciss) is 11pF
- Thermal resistance, junction ambient is 200℃/W
BC327 transistor Pinout
|Current flow through the collector
|The base terminal is used to trigger the transistor
|Current flows through the emitter
BC327 transistor package
The BC327 transistor had the TO-92 package, it is a general-purpose package device mainly used for low-power applications.
TO-92 transistor package is made with epoxy/plastic material, this is due to the high heat resistance property of the materials as the electrical component.
The TO-92 package is compact in size and less weight, this is why the BC327 transistor had many applications in small circuit networks.
Marking the case
This transistor component had a “BC327” marking on its case
BC327 transistor electrical specification description/ application
In this section we try to explain the electrical specifications of the BC547 transistor, this will be helpful for a better understanding of this device used for many applications.
The terminal voltage specs of BC327 transistor is a collector to emitter voltage is -30V & -45V and emitter to base voltage is -5V, the voltage specs show it is the general-purpose device.
The collector to emitter saturation voltage is -0.7V, it is the switching voltage of the BC327 transistor and it is always lesser than the base voltage.
Overall voltage specifications of the BC327 transistor show, that it is the general-purpose transistor that had more applications in sample circuits.
The collector current value is -800mA, and the current values of the BC327 transistor show that it is a general-purpose lowest load device.
The current values of the BC327 transistor show that they had more applications in driver and switching applications.
The power dissipation of the BC327 transistor is 625mW, it is the power dissipation of the device.
Current gain specs
The current gain value of the BC327 transistor is 60 to 630hFE, this is why these transistors are used for low-power amplifiers and switching applications.
The bandwidth transition frequency value of the BC327 transistor is 100MHz, it is the frequency range of the transistor.
The BC327 transistor had a low-frequency range, so the audio circuit application is low power and project circuits.
With the junction temperature of -55 to 150℃, the heat capacity of the transistor is mainly dependent on the case.
The thermal resistance of the BC327 transistor case is 200℃/W
The output capacitance of the BC327 transistor is 11pF
BC327 transistor DATASHEET
If you need the datasheet in pdf please click this link
BC327 transistor equivalent
The transistors such as 2N4403, BC488, BC638, 2N4402, 2N3702, BC328, and BC486 are the equivalent transistors of the BC327 device.
The electrical specifications of these transistors are the same as the BC327 transistor, this is the reason why we can use them as the equivalent transistors.
BC327 is a general-purpose transistor mainly used for project-based and audio amplifier applications, before the replacement we need to check and verify the PINOUT details.
BC327 complementary pair
The BC327 PNP transistor had NPN complementary pair BC337, the electrical specs of each of them are the same, and so we use them as the complementary pair.
BC327 transistor SMD version
The SMD version transistors such as 2SA1518 (SOT-23), 2SA1519 (SOT-23), 2SA1521 (SOT-23), and BC807W (SOT-323) are the SMD version transistors of BC327.
The power dissipation values of these transistors are different from BC327 transistors, other than that all the electrical specifications are the same.
BC327 vs BC557 vs BC488
In this table, we try to list the electrical specifications of BC327, BC557, and BC488 transistors, this is helpful for the replacement process.
|Collector to emitter voltage (VCES)
|Collector to emitter voltage (VCEO)
|Emitter to base voltage (VEB)
|Collector to emitter saturation voltage (VCE (SAT))
|0.30 to 0.65V
|-0.25V to -0.5V
|Collector current (IC)
|Junction temperature (TJ)
|-55 to +150°C
|-65 to +150°C
|-65 to +150°C
|Transition frequency (FT)
|60 to 630hFE
|75 to 800hFE
|15 to 400hFE
BC327 transistor applications
- PWM driver applications
- LED dimmer circuits
- LED flasher
- Preamp circuits
- Power amplifier
- Switching applications
- Microphone preamp circuits
- Relay driver applications
- Driver load under 800mA
- Microcontroller driver load
- Signal amplifier
Characteristics curves of BC327 transistor
The figure shows the static characteristics of the BC327 transistor, the graph is plotted with collector current vs collector to emitter voltage.
At different base current values, the collector current increases at different ranges.
The figure shows the DC current gain characteristics of the BC327 transistor, the graph is plotted with DC current gain vs collector current.
At a fixed collector to emitter voltages, the DC current gain increases from a higher limit with respect to collector current and the gain value drops at the end.
Relay driver circuit using a BC327 transistor
The figure shows the relay driver circuit using a BC327 transistor, the circuit consists of the relay, BC327 transistor, and flywheel diode.