BC237 transistor
BC237 specification
- BC237 is an NPN silicon BJT amplifier transistor device
- Collector to emitter voltage (VCEO) is 45V
- Collector to emitter voltage (VCES) is 50V
- Collector to base voltage (VEB) is 6V
- Collector current is 100mA
- Power dissipation is 1W
- DC current gain is 120 to 800hFE
- Current gain bandwidth (FT) is 150 to 250MHz
- Junction temperature is between -55 to 150℃
- Thermal resistance junction to ambient is 357℃/W
- Collector to emitter saturation voltage (VCE (SAT)) is2 to 0.6V
- Noise figure (NF) is 2 to 10dB
- Output capacitance (Cob) is 5 to 6pF
BC237 PINOUT
| Pin Number | Pin Name | Description |
| 1 | Collector | Current flow through the collector |
| 2 | Base | Base terminal is used to trigger the device |
| 3 | Emitter | Current flows through the emitter |
BC237 package
BC237 amplifier transistor has a TO-92 package, it is a three-terminal general-purpose device package made of epoxy/plastic material which had higher temperature capacity and compactness as an electronic component.
TO-92 is a through-hole electronic component, the shape, and size of the package make it used in smaller circuits.
BC237 electrical specification description & application notes:
Here in this section, we try to explain the electrical specifications of the BC237 transistor, this is very useful for a better understanding of the device for replacement process and circuit making.
Voltage specs
The voltage specifications of the BC237 transistor are a collector-to-emitter voltage of both terminals is 45V & 50V and emitter to base voltage value is 6V.
The voltage specs of this device show it is a low-voltage amplifier transistor.
Current specs
The collector current value of the BC327 transistor is 100mA, and the current value of the component indicates its load capacity.
Dissipation specs
The power dissipation value of the BC237 transistor is 1W, it is based on the device package.
Current gain specs
The DC current gain value of the BC237 transistor is 120 to 800hFE, the gain value is important for amplifier and power-based applications.
Transition frequency
The transition frequency value of the BC237 transistor is 150 to 250MHz, this value is important for circuit applications.
Junction temperature/ storage temperature
Maximum temperature value of the BC237 transistor is -55 to +150℃.
Thermal resistance between junctions to ambient
The thermal resistance value of the BC237 transistor is 357℃/W.
Noise figure
The noise figure value of the BC237 transistor is 2 to 10dB
Output capacitance
The output capacitance value of the BC237 transistor is 3.5 to 6Pf
BC237 DATASHEET
If you need the datasheet in pdf please click this link
BC237 equivalent
BC237 amplifier transistors have equivalent transistors such as BC546, BC550, S9014, C945, BC337, BC549, and BC547, each of these had the same electrical specifications as BC237, so we can use them as the equivalent transistors.
BC237 is an amplification transistor device, so the specs such as voltage, DC current gain, and frequency value are important, we need to check and verify them before the replacement process.
BC237 complementary
BC237 NPN transistors have complementary transistors BC307 PNP, both have the same and opposite electrical specifications. We can use them at circuits like push-pull and Darlington.
BC237 SMD EQUIVALENT
The SMD transistors BC847 (SOT-23), BC850W (SOT-323), and BC847W (SOT-323) are the SMD equivalent transistors of the BC237 transistor, each of them has the same electrical specs as the BC237 transistor.
BC237 vs SS9014 vs BC547
The table below listed the electrical specs of BC237, SS9014, and BC547 transistors, this comparison is very useful for a better understanding of the device.
| Characteristics | BC237 | SS9014 | BC547 |
|---|---|---|---|
| Collector to base voltage (VCB) | 50V | 50V | 60V |
| Collector to emitter voltage (VCE) | 45V | 45V | 40V |
| Emitter to base voltage (VEB) | 5V | 6V | 6V |
| Collector to emitter saturation voltage (VCE (SAT)) | 90 to 600mV | 200 to 600mV | 0.2 to 0.3V |
| Collector current (IC) | 100mA | 100mA | 200mA |
| Power dissipation | 500mW | 500mW | 625mW |
| Junction temperature (TJ) | -65 to +150°C | -65 to +150°C | -55 to +150°C |
| Transition frequency (FT) | 300MHZ | 300MHZ | 300MHz |
| Gain (hFE) | 110 to 800hFE | 110 to 800hFE | 40 to 300hFE |
| Output capacitance | 3.5 to 6pF | 9Pf | 8pF |
| Noise figure | 1.2 to 4dB | 2 to 10dB | 5dB |
| Package | TO-92 | TO-92 | TO-92 |
BC237 applications
- Switching applications
- Sensor circuit
- Preamp circuit
- Signal amplifier circuit
- Darlington circuit
- RF amplifier circuit
Characteristics curves of BC237 transistor
The figure shows the static characteristics of the BC237 transistor, and the graph plots with collector current vs collector to emitter voltage.
At different base current values, the static curve increases when the base current increases.
The figure shows the DC current gain characteristics of the BD237 transistor, the graph plots with DC current gain vs collector current.
At a constant collector-to-emitter voltage value, the DC gain value increases and become constant, and decreases at the end.
