BC117 transistor

BC117 transistor
BC117 transistor

BC117 specification

  • BC117 silicon planer epitaxial PNP transistor device
  • Collector to emitter voltage (VCES) is -50V
  • Collector to emitter voltage (VCEO) is -45V
  • Collector to base voltage (VCB) is -50V
  • Emitter to base voltage is –5V
  • Collector current is -100mA
  • Pulsed collector current is -200mA
  • Power dissipation is 3W
  • DC current gain is 125 to 500hFE
  • Current gain-bandwidth transition frequency (FT) is 200MHz
  • Junction temperature is between -65 to 175℃
  • Thermal resistance, junction to ambient is 500℃/W
  • Collector to emitter saturation voltage (VCE (SAT)) is -75 to -250mV
  • Output capacitance is 4pF
  • Noise figure is 2 to 10dB
  • Low power transistor
  • Low noise audio amplifier device

BC117 Pinout

BC117 Pinout
BC117 Pinout
Pin Number Pin Name Description
1 Emitter  Current flows through the emitter terminal
2 Base Base terminal is used to trigger the device
3 Collector Current flow through the collector 


BC117 package

The BC117 PNP transistor has a TO-18 package, it is a higher temperature capacity transistor package.

TO-18 is a three-terminal, cylinder-shaped, metal-covered transistor package, and the outer layer is made of metal, this provides us with temperature withstanding capacity.

TO-18 had a higher temperature storage capacity due to the material used on it and the compactness of the device package will support the transistors in small circuit applications.

BC117 PNP transistor electrical specification description

In this section we try to explain the important electrical specifications of BC117 transistors, this is very useful for a better understanding of the device.

Voltage specs

The voltage specs of BC117 PNP transistor are collector to emitter voltage is VCES is -50V, VCEO is -45V, emitter to base voltage is -5V, and collector to base voltage is -50V.

The collector to emitter saturation voltage is -75 to -250mV, it is the region switching voltage value of the device.

Voltage specifications of BC117 transistor show that it is a moderate voltage level device having more applications.

Current specs

The collector current value is -100mA, which is the load capacity of the BC117 PNP transistor.

Dissipation specs

The power dissipation of the BC117 PNP transistor is 0.3W, it is the product of the voltage and current at the transistor.

Current gain specs

The DC gain value of BC117 PNP transistor is 125 to 500hFE, the gain value of a transistor indicates the production of power at the device.

Transition frequency

The transition frequency value of the BC117 PNP transistor is 200MHz.

Junction temperature/ storage temperature

 The junction temperature/ storage temperature of -65 to 175℃.

Thermal resistance

The thermal resistance of junction to ambient value is 500℃/W

Output capacitance

The output capacitance of the BC117 PNP transistor is 4Pf

Noise figure

The noise figure value of BC117 PNP transistor is 2 to 10dB

BC117 transistor DATASHEET

If you need the datasheet in pdf please click this link

BC117 equivalent

The transistor devices such as BC117B, BC477, BC557, 2SA1218, 2N3496, BC108, BC107, and BC292 are the equivalent transistor devices of the BC117 transistor. Each of them has the same set of electrical specifications, so we can replace them at the BC117 transistor circuit.

BC117 complementary pair

The BC117 PNP transistor has NPN transistor complementary BC107, both of these transistors have the same and opposite electrical specifications.

BC117 SMD version transistors

The SMD transistors 2SA812 (SOT-23), BC857 (SOT-23), BC860 (SOT-23), and KSA812 (SOT-23) are the equivalents of BC117 transistors, the power dissipation values of these SMD transistors are different from BC117.

BC117 vs 2N3496 vs BC477

We listed the electrical specifications of BC117, 2N3496, and BC477 transistor devices, this comparison is very useful for better understanding and replacement process

Collector to emitter voltage -45V-80V-80V
Collector to emitter voltage-50V-90V
Collector to base voltage (VCB)-50V-80V-
Emitter to base voltage (VEB)-5V-4.5V-6V
Collector to emitter saturation voltage (VCE (SAT))-75 to 250mV0.3V0.3 to 0.25V
Collector current (IC)-100mA-100mA-150mA
Power dissipation0.3W400mW0.3W
Junction temperature (TJ)-65 to +175°C-65 to +200°C-55 to +200℃
Thermal resistance500℃/W-485℃/W
Transition frequency (FT)200MHz200MHz-
Gain (hFE)125 to 500hFE40hFE30 to 250hFE
Noise figure 2 to 10dB-10dB
Output capacitance4pF7pF6pF

BC117 applications

  • Driver stage applications
  • Low noise input stage applications
  • Signal processing circuit
  • Preamp circuit applications
  • Signal amplifier
  • Radiofrequency applications
  • Modules

Characteristics curves of BC117 PNP transistor

DC current gain characteristic of BC117 transistors
DC current gain characteristic of BC117 transistors

The figure shows the DC current gain characteristic of BC117 transistors, the graph is plotted with dc current gain vs collector current.

At constant collector to emitter voltage values, the gain of the device increases from the lowest value towards a higher value like a parabola and decreases towards a low value with respect to collector current.

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