BC107 transistor electrical specification
- BC107 is an NPN bipolar junction silicon transistor device
- Collector to emitter voltage is 45V
- Collector to base voltage is 50V
- Emitter to base voltage is 6V
- Collector current is 100mA
- Power dissipation is 3W
- DC current gain is 110 to 450hFE
- Small signal DC current gain is 250hFE
- Current gain-bandwidth (FT) is 150MHz
- Junction temperature is between -55 to 175℃
- Collector to emitter saturation voltage (VCE (SAT)) is 70 to 600Mv
- Noise figure (NF) is 4KΩ
- Output capacitance (Ciss) is 5pF
- Thermal resistance, junction ambient is 200℃/W
- Low noise general-purpose audio amplifier device
BC107 transistor Pinout
|Pin Number||Pin Name||Description|
|1||Base||Base is used as the trigger for the transistor|
|2||Collector||Current flow through the collector|
|3||Emitter||Current flows through the emitter|
BC107 transistor package
The BC107 transistor had a TO-18 metal-covered package for higher heat resistance property.
The TO-18 package is made with a metal covering on the outside, this is why the BC107 transistor had higher heat resistance and dissipation capability.
Marking the case
This transistor component had a “BC107” marking on its case
BC107 transistor electrical specification description/ application
In this section we try to explain the electrical specifications of the BC107 transistor, this will be helpful for a better understanding of this device used for many applications.
The terminal voltage specs of BC107 transistor are collector to base voltage is 50V, collector to emitter voltage is 45V and emitter to base voltage is 6V.
The collector to emitter saturation voltage is 70 to 600mV, it is the voltage value lesser than the base voltage and it is the switching speed of the BC107 transistor.
The overall voltage value of the BC107 transistor shows that it is a general-purpose transistor device mainly used for driver and general-purpose amplifier applications.
The collector current value is 100mA, and the current values of the BC107 transistor show that it is a general-purpose lowest load device.
The power dissipation of the BC107 transistor is 0.3W, it is the power dissipation of the device.
Current gain specs
The current gain value of the BC107 transistor is 110 to 450hFE, this is why these transistors are used for low power amplifiers and switching applications.
The small-signal DC current gain value of the BC107 transistor is 250Hfe, this value is really helpful for signal amplification applications.
The bandwidth transition frequency value of the BC107 transistor is 150MHz, it is the frequency range of the transistor.
With the junction temperature of -55 to 175℃, the heat capacity of the transistor is mainly dependent on the case.
The TO-18 transistor package had a higher temperature capability.
The thermal resistance of the BC107 transistor case is 200℃/W
The noise figure value of the BC107 transistor is 4KΩ.
BC107 transistor DATASHEET
If you need the datasheet in pdf please click this link
BC107 transistor equivalent
The transistors such as BC108, BCY651X, BC546, BC547, and BC549 are the BC107 transistor equivalent.
The electrical characteristics of these transistor devices are the same, so we can easily use them as the replacement for the BC107 transistor.
Before the replacement process, we need to check and verify the PINOUT details of each transistor.
BC107 complementary pair
The BC107 NPN transistor had PNP complementary pair BC177, the electrical specs of each of them are the same, and so we use them as the complementary pair.
BC107 transistor SMD version
The SMD version transistors such as BC847 (SOT-23), BC847W (SOT-323), and KSC1623 (SOT-23), are the SMD equivalent of the BC107 transistor.
The power dissipation values of these transistors are different from BC107 transistors, other than that all the electrical specifications are the same.
BC107 vs BC547 vs 2N2222
In this table, we try to list the electrical specifications of BC107, BC547, and 2N2222 transistors, this is helpful for the replacement process.
|Collector to base voltage (VCB)||50V||50V||60V|
|Collector to emitter voltage (VCE)||45V||45V||30V|
|Emitter to base voltage (VEB)||6V||6V||5V|
|Collector to emitter saturation voltage (VCE (SAT))||70 to 600mV||90 to 250mV||400mV to 1.6V|
|Collector current (IC)||100mA||100mA||800mA|
|Junction temperature (TJ)||-55 to +175°C||-65 to +150°C||-65 to +150°C|
|Transition frequency (FT)||150MHZ||300MHZ||250MHz|
|Gain (hFE)||110 to 450hFE||110 to 800hFE||30 to 300hFE|
|Noise figure||4dB||2 to 10dB||4dB|
BC107 transistor applications
- Driver stage
- Low noise input stage circuit
- Signal processing circuits
- Television receivers
- Driver modules
- LED drivers
- Amplifier modules
- Audio amplifier circuit
- Signal amplifier
- Darlington pair
- Portable devices
- Industrial purpose
- Power management
- RF circuit
- LOW noise signal processing circuit
Characteristics curves of BC107 transistor
The figure shows the DC current gain characteristics of the BC107 transistor, the graph is plotted with DC gain vs collector current.
At a fixed electrical condition, the DC current gain increases from the lowest value and increases towards a high value, and decreases at the end.
The figure shows the collector to emitter saturation voltage characteristics of the BC107 transistor, the graph is plotted with the collector to emitter saturation voltage vs collector current.
The saturation voltage at the BC107 transistor form a parabolic shape at the characteristics curve.