B772 transistor
B772 transistor electrical specification
- 2SB772 is a PNP transistor device
- Collector to emitter voltage is 30V
- Collector to base voltage is 60V
- Emitter to base voltage is 5V
- Collector current is 3A
- Peak collector current is 6A
- Base current is 1A
- Power dissipation is 5W
- DC current gain is 30 to 300hFE
- Current gain-bandwidth (FT) is 100MHz
- Junction temperature is between -65 to 150℃
- Collector to emitter saturation voltage (VCE (SAT)) is -0.4 to -1.1V
- Thermal resistance is 10℃/W
- High current
- Low saturation voltage
B772 transistor Pinout
| Pin Number | Pin Name | Description |
| 1 | Base | The base is the trigger for the transistor |
| 2 | Collector | Current flows through the collector |
| 3 | Emitter | Current flows through the emitter |
B772 transistor package
TO-126 is the package used for the B772 PNP transistor, it is a medium power transistor package used for general purpose applications.
The TO-126 package’s main part is made with a mixture of epoxy/plastic and the back portion is made with metal, which acts as the heat sink.
The material used to make the TO-126 package is good at heat resistance and the heat sink portion will transfer heat toward the heat sink.
Marking the case
The marking for the 2SB772 transistor is B772
B772 transistor electrical specification description/ application note
In this section, we try to explain the electrical specifications of the B772 transistor with its application descript.
Voltage specs
The voltage of the B772 transistor is a collector to emitter voltage is 30v, emitter to base voltage is 5v, and collector to base voltage is 60v, the terminal voltage specs show that it is a medium power general-purpose transistor device.
The collector to emitter saturation voltage value is -0.4 to -1.1v, the B772 transistor had a low saturation value, which means they had high-speed switching.
Current specs
The collector current value is 3A, and the load capacity of the B772 transistor is apt for the driver and voltage regulator applications.
The peak collector current value in pulsed will be 6A
Dissipation specs
The power dissipation of the B772 transistor is 12.5W, the high dissipation capacity of the transistor will be mainly due to the transistor package.
Current gain specs
The current gain value of the B772 transistor is 30 to 300Hfe, this shows that the B772 transistor had a moderate level of amplification factor and voltage regulation.
Current gain-bandwidth transition frequency
The bandwidth transition frequency value of the B772 transistor is 100MHz, the audio system frequency range.
Junction temperature
The junction temperature of -65 to 150℃, which is a general-purpose transistor temperature value of capacity.
Thermal resistance
The thermal resistance of the B772 transistor case is 10℃/W
B772/ 2SB772 transistor DATASHEET
If you need the datasheet in pdf please click this link
B772 transistor equivalent
The transistor such as BD132, BD186, BD190, 2N6407, 2SA738, 2N6414, BD386, and MJE234 are the equivalent of B772 transistor.
The electrical specs of each transistor are the same as the B772 transistor, so we can use them as the replacement for the B772 transistor.
Before using those as the replacement for the B772 transistor we need to check the physical specs such as pinout and heat sink.
B772 transistor complementary
The 2SD882 NPN transistor is complementary to the B772 PNP transistor, at so many applications this complementary pair will be used to make different circuits.
B772 vs BD132 vs 2SB743
In the table below we try to compare the electrical specs of B772 vs BD132 vs 2SB743, this is helpful for the replacement process.
| Characteristics | 2SB772 | BD132 | 2SB743 |
|---|---|---|---|
| Collector to base voltage (VCB) | 60V | 45V | 40V |
| Collector to emitter voltage (VCE) | 30V | 45V | 30V |
| Emitter to base voltage (VEB) | 5V | 6V | 5V |
| Collector to emitter saturation voltage (VCE (SAT)) | -0.4 to –1.1V | 300mV | 2V |
| Collector current (IC) | 3A | 3A | 3A |
| Power dissipation | 12.5W | 15W | 1 to 10W |
| Junction temperature (TJ) | -65 to +150°C | -65 to +150°C | -55 to +150°C |
| Transition frequency (FT) | 100MHZ | 60MHZ | 55MHZ |
| Gain (hFE) | 30 to 300hFE | 40hFE | 30 to 320hFE |
| Package | TO-126 | TO-126 | TO-126 |
The voltage specs for every three transistors are the same, the values show that they are general purpose transistor devices.
The current gain and transition frequency values indicate that each of these transistors is mainly capable of amplifier applications.
B772/ 2SB772 transistor applications
- Voltage regulator
- Relay drivers
- Generic switches
- Audio power amplifier
- DC-DC converter
- H-bridge circuits
- Multi-vibrator circuits
B772 transistor characteristics
The figure shows the DC current gain characteristics of B772 MOSFET, the graph is plotted with dc current gain vs collector current.
The characteristics of B772 MOSFET are plotted with junction temperature and collector to emitter voltage.
At a fixed rate, the current gain increases from a fixed limit and the effect of temperature.
The figure shows the collector to emitter saturation voltage characteristics of IRF540 MOSFET, the graph is plotted with the collector to emitter saturation voltage vs collector current.
At a fixed DC current gain, the temperature value is varied at different saturation voltage ranges.
Complementary amplifier circuit using B772 and D882
The figure shows the amplifier circuit using D882 and B772 complementary transistors, the circuit consists of a 1N4007 diode, BC635 transistor, and the complementary pair B772 and D882.
It is a class B amplifier, this is why diodes are used at this circuit and the BC635 transistor is used as the initial amplifier stage.
The push-pull action of the B772 transistor and D882 transistor will produce an amplified signal.
