B647 transistor
B647 transistor electrical specification
- B647 is a plastic encapsulate PNP transistor device
- Collector to base voltage (VCB) is -120V
- Collector to emitter voltage (VCE) is -80V
- Emitter to base voltage (VEB) is -5V
- Collector current is -1A
- Power dissipation is 900mW
- DC current gain is 60 to 320hFE
- Transition frequency (FT) is 140MHz
- Junction temperature is between -55 to 175℃
- Thermal resistance, junction to ambient is 139℃/W
- Collector to emitter saturation voltage (VCE (SAT)) is -1V
- Output capacitance is 20pF
- High-speed switching
- Wide safe operating area
B647 PINOUT
| Pin Number | Pin Name | Description |
| 1 | Emitter | Current flows through the emitter terminal |
| 2 | Collector | Current flow through the collector |
| 3 | Base | Base terminal is used to trigger the transistor |
B647 package
B647 speed switching transistor had TO-92MOD & TO-92 packages, both of packages are general purpose.
TO-92MOD/TO-92 is a three-terminal small-sized device package made with epoxy/plastic material, which had higher temperature capacity and the compactness of the package makes it used for small-scale applications.
B647 electrical specification description & application note
Here in this section, we explain the electrical specifications of the B647 transistor, this explanation is really useful for a better understanding of this device and support for the replacement process also.
Voltage specs
The terminal voltage specs of B647 are collector to emitter voltage is -80V, collector to base voltage is -120V, and emitter to base voltage is -5V.
The collector-to-emitter saturation voltage value of the B647 transistor is -1V, it is the switching voltage value of this device.
The voltage specifications of B647 indicate it is a high-voltage device mainly used for power handling applications.
Current specs
The collector current value of B647 is -1A, it is the maximum load capacity of the device.
Dissipation specs
The power dissipation ability of the B647 transistor is 900mW, this value is been calculated by adding the current and voltage values of the device.
Current gain specs
The DC current gain value of B647 is 60 to 320hFE, this value is important for amplifier circuits and power handling applications.
Transition frequency
The transition frequency value of the B647 is 140MHz, this value had importance at the circuit level.
Junction temperature/ storage temperature
The maximum temperature value of B647 of -65 to 150℃.
Thermal resistance
The thermal resistance of the junction to ambient value is 139℃/W
Output capacitance
The output capacitance of the BC647 is 20Pf.
B647 DATASHEET
If you need the datasheet in pdf please click this link
B647 equivalent
B647 PNP high voltage transistor devices have equivalent transistors such as 2SB647A, 2SB1256, CP753, ECG383, 2SA1275, and KTA1275, each of them had the same set of electrical specifications.
We need to check and verify the specs such as voltage, transition frequency, current, and PINOUT details because the B647 transistor they are important for most of the applications.
B647 complementary pair
The B647 PNP transistor has a 2SD667 NPN transistor as the complementary pair, a combination of both transistors are been used for some applications.
B647 vs 2SA1275
Here in the table below, we list and compare B647 and 2SA1275 transistors, this specifications comparison is really useful for a better understanding and also supports the replacement process.
| Characteristics | B647 | 2SA1275 |
|---|---|---|
| Collector to emitter voltage (VCE) | -80V | -160V |
| Collector to base voltage (VCB) | -120V | -160V |
| Emitter to base voltage (VEB) | -5V | -6V |
| Collector to emitter saturation voltage (VCE (SAT)) | -1V | -1.5V |
| Collector current (IC) | -1A | -1A |
| Power dissipation | 900mW | 400mW |
| Junction temperature (TJ) | -55 to +150°C | -55 to +150°C |
| Thermal resistance | 139℃/W | - |
| Transition frequency (FT) | 140MHz | 15 to 50MHz |
| Gain (hFE) | 60 to 320hFE | - |
| Output capacitance | 20pF | 35pF |
| Package | TO-92MOD/TO-92 | TO-92MOD |
B647 characteristics curves
The figure shows the static characteristics of the B647 transistor, the graph plots with collector current vs collector to emitter voltage.
At different base current values, the collector current values increase with a fixed proportion with respect to voltage values, so the collector current values increase with the increase of base current values.
The figure shows the DC current gain characteristics of the B647 transistor, the graph plots with DC current gain vs collector current.
At a fixed collector-to-emitter voltage value and two different temperature values, the DC gain value increases from a particular higher value and dips at the end.
B647 applications
- Electronic ballots for fluorescent lighting
- Charger circuit
- SMPS circuit
- Low-frequency power amplifier circuit
- Motor driver circuit
