A940 transistor electrical specification
- A940 is a PNP high-power silicon transistor device
- Collector to emitter voltage (VCE) is -150V
- Collector to base voltage (VCB) is -150V
- Emitter to base voltage (VEB) is –5V
- Collector current is -1.5A
- Base current is -0.5A
- Power dissipation is 5W
- DC current gain is 55hFE
- Junction temperature & storage temperature is between -55 to +150℃
- Collector to emitter saturation voltage (VCE (SAT)) is -1.5V
- Transition frequency is 4MHz
A940 transistor Pinout
|Pin Number||Pin Name||Description|
|1||Base||Base terminal is used to trigger the transistor|
|2||Collector||Current flow through the collector|
|3||Emitter||Current flows through the emitter|
A940 transistor package
The 2SA940/A940 high-voltage transistor has a TO-220C device package, it is a high-power package used for power applications.
TO-220C package is made of epoxy/plastic material which had higher temperature resistance and compactness.
TO-220C is a through-hole bulkier package, so on the device, there is a provision to attach a heat sink with it.
A940 transistor electrical specification description/ application
Here in this section, we explain the electrical specifications of the A940 transistor, a proper explanation is very useful for a better understanding of the device.
The terminal voltage specifications of the A940 transistor are collector to emitter voltage is -150V, collector to base voltage is -150V, and emitter to base voltage is -5V.
The collector-to-emitter saturation voltage of the A940 transistor is -1.5V, which is the switching voltage of the device.
The voltage specs of the A940 transistor show that it is a high-voltage device having power applications.
The collector current specs of the A940 transistor are -1.5A, which is the maximum load capacity of the device.
The base current value of the A940 transistor is -0.5V, it is the triggering current of the device.
The dissipation ability of the A940 transistor is 1.5W, it is mainly dependent on the device package.
Current gain specs
The DC current gain specs of the A940 transistor is 55Pf, this value suggests the amplification ability of the device.
Junction temperature/storage temperature
The junction temperature and storage temperature A940 transistor is between -55 to +150℃.
The transition frequency value of the A940 transistor is 4MHz, the frequency value is depended on the circuit.
A940 transistor DATASHEET
If you need the datasheet in pdf please click this link
A940 transistor equivalent
A940 transistor device has equivalent transistors 2SA1304, 2SA740, 2SB546, 2SB630, 2SB546, 2SA1006, 2SA1133, 2SB567, and MJE5850, all of these devices have the same set of electrical specifications.
The specifications such as voltage, current, and power dissipation are important for power applications, so check and verify them before the replacement.
A940 PNP transistor complementary
The A940 PNP transistor has complementary pair of 2SC2073 NPN transistors, each of them having the same and opposite set of electrical specifications, so we can easily use it for push-pull and Darlington pair applications.
A940 vs 2SA740 vs 2SA1079
Here in the table below, we listed and compare A940 vs 2SA740 vs 2SA1079 transistor devices, this comparison is very useful for a better understanding of the transistors.
|Collector to emitter voltage (VCE)||-150V||-150V||-160V|
|Collector to base voltage (VCB)||-150V||-150V||-160V|
|Emitter to base voltage (VEB)||-5V||-5V||-7V|
|Collector to emitter saturation voltage (VCE (SAT))||-1.5V||-1.5V||-1.0V|
|Collector current (IC)||-1.5A||-1.5A||-2A|
|Junction temperature (TJ)||-55 to +150°C||-55 to +150°C||-65 to +150°C|
|Transition frequency (FT)||4MHz||8MHz||140MHz|
|Gain (hFE)||55hFE||40 to 140hFE||60 to 350hFE|
A940 transistor uses
- POWER amplifier applications
- Vertical output applications
- General purpose POWER amplifier
- Darlington pair circuit
Characteristics curves of A940 transistor
The figure shows the static characteristic of the A940 transistor device, the graph plots with collector current vs collector to emitter voltage.
At different base current values, the collector current increases to the maximum with respect to the collector-to-emitter voltage.
The figure shows the DC current gain characteristic of the A940 transistor, the plots with DC current gain vs collector current.
At constant voltage values, the gain value increases from a particular value and touches a higher value then decreases towards a lower value with respect to the collector current value.
The figure shows the safe operating area characteristics of the A940 transistor, the graph plots with collector current vs collector to emitter voltage and switching speed and temperature value.