A1297 transistor
2SA1297/A1297 transistor electrical specification
- 2SA1297 is a PNP bipolar junction transistor device
- Collector to emitter voltage is -20V
- Collector to base voltage is -20V
- Emitter to base voltage is -6V
- Collector current is -2A
- Base current is -0.5A
- Power dissipation is 400mW
- DC current gain is 40 to 400hFE
- Current gain-bandwidth (FT) is 120MHz
- Junction temperature is between -55 to 150℃
- Collector to emitter saturation voltage (VCE (SAT)) is -0.5V
A1297 transistor Pinout
| Pin Number | Pin Name | Description |
| 1 | Emitter | Current flows through the emitter |
| 2 | Collector | The collector terminal is acts as the output of the transistor |
| 3 | Base | Base is used to trigger the transistor |
A1297 transistor package
The A1297 transistor had a TO-92 device package, it is a common type of transistor package used for general-purpose devices.
The TO-92 package is made with epoxy and plastic, these types of materials had higher heat resistance, compactness, and lite weight.
A1297 transistor explanation of electrical specification and application
In this section, we try to explain the electrical specification of the A1297 transistor and mentioned the applications.
Voltage specs
The terminal voltage specs of the A1297 transistor are collector to base voltage is -20V, collector to emitter voltage is -20V, and emitter to base voltage is -6V, the voltage specs show that it is a medium power transistor device mainly used for amplifier and switching applications.
The collector to emitter saturation voltage is -0.5V, and the region switching and operation of the transistor are been measured using this value.
Current specs
The collector current value is -2A, this PNP transistor had a higher current value, which means they had a higher load at circuits.
Dissipation specs
The power dissipation of the A1297 transistor is 400mW, it is the dissipation value of a POWER device.
Current gain specs
The current gain value of the A1297 transistor is 40 to 400hFE, the gain value of the transistor shows the amplification capacity of the device.
Current gain-bandwidth transition frequency
The bandwidth transition frequency value of the A1297 transistor is 120MHz, it is the frequency range of the transistor.
Junction temperature
The junction temperature is -55 to 150℃ for the transistor, it is the capacity of the device at the temperature change.
A1297 transistor DATASHEET
If you need the datasheet in pdf please click this link
A1297 transistor equivalent
The transistor devices such as 2SA1213, A1241, A1273, 2DA1213, 2SB929, and 2SB930 are the transistors equivalent to A1297.
Most of the electrical specifications of each transistor are the same as the A1297 transistor, voltage specs of some of the transistors are different, so check and verify before the replacement.
The PINOUT details of all-transistor are the same, so we can easily replace them without further verification.
A1297 transistor complementary
The A1297 NPN transistor had a complimentary pair 2SC3267 PNP transistor, at some of the circuits these complementary are been used as the main component.
A1297 vs 2SA1241 vs 2SB930
In the table, we try to compare the electrical specifications of A1297, 2SA1241, and 2SB930 transistor devices, this comparison is really helpful for the replacement process.
| Characteristics | A1297 | 2SA1241 | 2SB930 |
|---|---|---|---|
| Collector to base voltage (VCB) | -20V | -50V | -60V |
| Collector to emitter voltage (VCE) | -20V | -50V | -60V |
| Emitter to base voltage (VEB) | -6V | -5V | -5V |
| Collector to emitter saturation voltage (VCE (SAT)) | -0.5V | -0.5V | -1.5V |
| Collector current (IC) | -2A | -2A | -4A |
| Power dissipation | 400mW | 10W | 40W |
| Junction temperature (TJ) | -55 to +150°C | -55 to +150°C | -55 to +150°C |
| Transition frequency (FT) | 120MHZ | 100MHZ | 20MHZ |
| Gain (hFE) | 40 to 400hFE | 70 to 240hFE | 15 to 250hFE |
| Package | TO-92 | TO-252 | TO-220 |
The voltage specs of the three transistors are different, 2SB930 transistor is the power device in this list, in terms of voltage specs.
The collector current value of each transistor is higher, but the 2SB930 is better at the load capacity.
Most of the electrical specifications show that 2SB930 is a power transistor, which has applications in POWER devices.
A1297 transistor applications
- Power amplifier circuits
- Power switching circuits
A1297 transistor characteristics
The figure shows the DC current gain characteristics of the A1297 transistor, the graph is plotted with DC current gain vs collector current.
At a fixed collector to an emitter voltage value, the DC current gain increases from a particular value with respect to collector current.
The DC current gain and temperature had a relation to establishing, at the DC gain will decrease at the end.
The figure shows the collector to emitter saturation characteristics of the A1297 transistor, the graph is plotted with the collector to emitter saturation voltage vs collector current.
At a fixed base current, the saturation voltage will increases very slowly and form a curve, and then increases towards a higher value at the end.
The figure shows the A1297 transistor working characteristics, the graph is plotted with collector current vs collector to emitter voltage.
At different base current values, the collector current will increase at each time with respect to the collector to emitter voltage.
