A1013 transistor
A1013 transistor electrical specification
- 2SA1013 is a PNP BJT epitaxial transistor device
- Collector to emitter voltage is -160V
- Collector to base voltage is –160V
- Emitter to base voltage is –6V
- Collector current is -1A
- Base current is -0.5A
- Power dissipation is 500W
- DC current gain is 60 to 320hFE
- Transition frequency (FT) is 15 to 50MHz
- Junction temperature is between -55 to 150℃
- Collector to emitter saturation voltage (VCE (SAT)) is -1.5V
- High DC current gain
- Large continuous collector current capability
A1013 transistor Pinout
| Pin Number | Pin Name | Description |
| 1 | Emitter | The emitter is the output for the transistor |
| 2 | Collector | The collector terminal will act as the output of the trigger |
| 3 | Base | The base is used as the trigger for the transistor |
A1013 transistor package
The A1013 transistor has a TO-92 device package, it is a general-purpose device package.
The TO-92 package is made as temperature resistant and compact at its size, both these features will become under the material used to make the package, epoxy, and plastic are the materials used to make the package.
And the A1013 transistor is a high voltage device used for many applications, so the device package had much importance.
A1013 transistor explanation for electrical specification and application
In this section we try to explain the electrical specifications of the A1013 transistor, this explanation will help us to know about the transistor.
Voltage specs
The terminal voltage specs of the A1013 transistor collector to base and collector to emitter voltage value is -160V and emitter to base voltage is -6v, the terminal voltage shows that these transistors had higher voltage values.
The collector to emitter voltage value is -1.5V, it is the voltage at a specific condition where voltage and current are at constant or zero condition.
The voltage value of the A1013 transistor shows that it is a transistor having higher voltage and switching applications.
Current specs
The collector current value is -1A, it is the maximum load capacity of the transistor.
In switching applications, the A1013 transistor had many important roles to play.
Dissipation specs
The power dissipation value of the A1013 transistor is 500W, it is the dissipation capacity of the transistor.
Current gain specs
The current gain value of the A1013 transistor is 60 to 320hFE, it is the amplification capacity of a transistor device.
Transition frequency
The bandwidth transition frequency value of the A1013 transistor is 15 to 50MHz, this transistor had a low-frequency range.
Junction temperature
The junction temperature is -55 to 150℃ for the transistor, it is the capacity of the device at the temperature change.
A1013/2SA1013 transistor DATASHEET
If you need the datasheet in pdf please click this link
A1013 transistor equivalent
The transistor devices 2SA1275, KSA1013, A1015, A1020, A1037, and A1048 are the equivalent of A1013 transistors.
The main electrical specifications of these transistors are the same, so we can use them as a perfect equivalent for the A1013 transistor at circuits.
We need to check and verify the PINOUT details before the replacement process, this is because, and these are high voltage devices.
A1013 transistor complementary
The 2SA1013 PNP transistor had a complementary 2SC2383 NPN transistor, this transistor pair had many applications in switching and amplifier circuits.
A1013 SMD version transistor
The SMD transistors such as 2SA1013G (SOT-89) and KST93 (SOT-23) are the SMD version transistors of A1013 or 2SA1013.
The most important electrical specifications of these SMD transistors are the same as the through-hole version A1013 transistor, the power dissipation is different.
A1013 vs 2SA1275
In the table, we listed the electrical specifications of A1013 and 2SA1275 transistors.
| Characteristics | A1013 | 2SA1275 |
|---|---|---|
| Collector to base voltage (VCB) | -160V | -160V |
| Collector to emitter voltage (VCE) | -160V | -160V |
| Emitter to base voltage (VEB) | -6V | -6V |
| Collector to emitter saturation voltage (VCE (SAT)) | -1.5V | -1.5V |
| Collector current (IC) | -1A | -1A |
| Power dissipation (PD) | 500W | 900mW |
| Junction temperature (TJ) | -55 to +150°C | -55 to +150°C |
| Transition frequency (FT) | 15 to 50MHZ | 15 to 50MHZ |
| Gain (hFE) | 60 to 320hFE | 60 to 320hFE |
| Package | TO-92 | TO-92 |
Every important electrical specification of both A1013 and 2SA1275 transistor are the same, only the power dissipation value is different.
A1013 transistor applications
- Suitable for color TV vertical deflection output applications
- Power switching applications
A1013 transistor characteristics
The figure shows the output characteristics of the A1013 transistor, the graph plots with collector current vs collector to emitter voltage.
At different base current levels, the collector current increases from lower to higher with respect to the collector to emitter voltage.
The figure shows the DC current gain characteristics of the A1013 transistor, the graph is plotted with DC current gain vs collector current.
At two fixed voltage values, the DC current gain increases from a particular limit and becomes constant then dips towards a lower value.
