80NF70 specs

  • 80NF70 is an N-channel POWER MOSFET device
  • Drain to source voltage (VDSS) is 68V
  • Gate to source voltage (VGS) is +/-20V
  • Gate to the threshold voltage (VGS (th)) is 2V, 3V & 4V
  • Drain current (ID) is 98A
  • Pulsed drain current (IDM) is 392A
  • Power dissipation (PD) is 190W
  • Total gate charge (Qg) is 75nC
  • Drain to source on-state resistance (RDS (ON)) 0082Ω to 0.0098Ω
  • Rise time (tr) is 60ns
  • Body diode recovery dv/dt is 13V/ns
  • Thermal resistance junction to case (Rth j-C) is 79℃/W
  • Junction temperature (TJ) is between -55 to 175℃
  • Body diode reverse recovery (trr) is 70ns
  • Input capacitance is 2550pf
  • Output capacitance is 550pf
  • Exceptional dv/dt capability
  • 100% avalanche tested
  • Low input capacitance

80NF70 Pinout

80NF70 Pinout
80NF70 Pinout
Pin Number Pin Name Description
1 GATE The gate terminal will be used to trigger the MOSFET device
2 DRAIN The drain is the input terminal of the MOSFET (D-TAB)
3 SOURCE In the source, terminal current flows out from the MOSFET 


80NF70 package

80NF70 MOSFET device has a TO-220 device package, it is a three-terminal bulkier package.

TO-220 is a through-hole package made of epoxy/plastic material which had higher temperature resistance and lite weight as a component package.

The backside portion of the TO-220 package is coated with metal, which is used to attach the heat sink with it for heat transfer.

80NF70 electrical specification explanation 

In this section we explain the electrical specifications of the 80NF70 MOSFET device, this explanation is really helpful for a better understanding of the device.

Voltage specs

The voltage specification of 80NF70 MOSFET is the drain to source voltage is 68V, the gate to source voltage is +/-20V, and the gate threshold voltage is 2V, 3V, and 4V.

The voltage specs of 80NF70 MOSFET show that it is a high-voltage device having power supply applications.

Current specs

The drain current value of 80NF70 MOSFET is 98A, and the current value of the semiconductor shows the load capacity.

The pulsed drain current is 392A, and the pulsed value is calculated at a specific condition.

 Dissipation specs

The power dissipation value of 80NF70 MOSFET is 190W, it is a high-power device having higher capacity.

Drain to source on-state resistance

The on-state resistance value of 80NF790 is 0.0082Ω to 0.0098Ω, the resistance value is offered by the semiconductor device.

Junction temperature/ storage temperature

The junction temperature/storage temperature of the 80NF70 MOSFET is -55 to +175℃.

Thermal resistance junction to case

The thermal resistance, junction to case value of 80NF70 MOSFET is 0.79℃/W

Rise time

The rise time value at 80NF70 MOSFET is 60ns

Input capacitance

The capacitance value of 80NF70 MOSFET is 2550pf.


If you need the datasheet in pdf please click this link


The 80NF70 MOSFET have equivalent devices IRFB4410Z, IRLB4030, IRFB3507, IRF3710, 80NF03, and IRF3205, each of these MOSFET have the same electrical specifications, so we can easily use them as the replacement.

The main application based on 80NF70 MOSFET is a high-efficiency switching circuit, current specs and voltage values is been very important at the circuit level.

80NF70 vs IRF3710 vs IRLB4030

In this table, we list and compare the electrical specifications of RFP30N06LE and IRFZ40 MOSFET devices.

Drain to source  voltage (VDS))68V100V100V
Gate-to-source voltage (VGS)+20V20V+/-16V
The gate threshold voltage (VG(th)) 2V, 3V and 4V2V to 4V1V to 2.5V
Drain current (ID)98A57A180A
Total gate charge (Qg)75nC130nC87 to 130Nc
Power dissipation (PD)190W200W370W
Junction temperature (TJ)-55 to +175°C-55 to +175°C-55 to +175℃
Drain to source on-state resistance (RDS)     0.047Ω23mΩ3.4 to 4.3mΩ
Thermal resistance   0.79℃/W0.75℃/W0.40℃/W
Rise time (tr)60ns58ns330ns
Reverse recovery time (trr)70ns140 to 220ns50 to 60ns
Input capacitance2550pf3130pf-
Output capacitance550pf410pf-

Graphical characteristics of 80NF70 MOSFET

output characteristics of 80NF70 MOSFET
output characteristics of 80NF70 MOSFET

The figure shows the output characteristics of 80NF70 MOSFET, the graph plots with drain current vs drain to source voltage.

At the different gate-to-source voltage values, the drain current increase from zero to higher and become constant at the initial stages with respect to drain-to-source voltage, and the drain current increases towards infinity.

safe operating area characteristics of 80NF70
safe operating area characteristics of 80NF70

The figure shows the safe operating area characteristics of 80NF70, the graph plots with drain current vs drain to source voltage, on-state resistance, and switching speed.

Applications of 80NF70

  • High-efficiency switching
  • UPS circuit
  • Battery charger applications
  • Power supply circuit
  • Solar charger circuit
  • BMS circuit
  • Inverter circuit
  • DC/DC converter
  • Speed control of the motor circuit
  • LED dimmer
  • LED flasher

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