2SK117 JFET transistor
2SK117 JFET specification
- 2SK117 is a general-purpose N-channel junction type JFET device
- Gate to drain voltage (VGDS) is –50V
- Gate to source cutoff voltage (VGS (OFF)) is -0.2 to -1.5V
- Gate to drain breakdown voltage (V (BR) GDS) is -50V
- Drain gate forward current (IGF) is 10mA
- Power dissipation is (PD) is 300mW
- Zero gate voltage drain current (IDSS) is 2 to 14mA
- Input capacitance (Ciss) is 13pF
- Junction temperature (TJ) is between -65 to 125℃
- Noise figure (NF) is 5 to 10dB
- Forward transfer admittance (Yfs) 4 to 15ms
- Low noise audio amplifier device
2SK117 JFET PINOUT
| Pin Number | Pin Name | Description |
| 1 | Drain | The drain terminal is the current inlet of the JFET device |
| 2 | Gate | The gate is used to trigger the JFET device |
| 3 | Source | In the source, terminal current flows out from the JFET |
2SK117 JFET package
The 2SK117 is a JFET transistor device mainly used for low-power applications, TO-92 package is made with plastic material which is good heat resistant and compact for electronic component usage.
2SK117 JFET electrical specification and application description
In this section, we try to explain the electrical specifications of the 2SK117 JFET transistor device. This specs explanation is really helpful for the replacement process.
Voltage specs
The voltage specs of 2SK117 JFET are the gate to source voltage is -50V, the gate to drain breakdown voltage is -50V, and the voltage shows it is a medium power device.
The gate to source cutoff voltage is -0.2 to -1.5V, it is the voltage value needed for the JFET cutoff.
The voltage specifications of the 2SK117 JFET transistor show that they have more applications in low-power amplifier applications.
Current specs
The gate forward current value of 2SK117 JFET is 10Ma and the drain current is 1.2 to 14mA, the current specifications of this device show that it is a device having a moderate range of current value.
Dissipation specs
The power dissipation is 300mW for the 2SK117 JFET device, this transistor is designed to withstand low power applications.
Junction temperature
The junction temperature of 2SK117 JFET is -55 to +125℃.
Input capacitance
The capacitance value offered by the 2SK117 JFET device at the input is 13pF
Noise figure
The noise figure value is 5 to 10dB, the noise value of this transistor shows that it may be used for audio amplifier applications.
Forward transfer admittance
The admittance value of the 2SK117 JFET transistor is 4 to 15ms
2SK117 JFET TRANSISTOR DATASHEET
If you need the datasheet in pdf please click this link
2SK117 JFET EQUIVALENT
The JFET transistors have equivalent devices such as J201, 2N5457, BF245, 2N5292, and 2SK1000.
Each of these JFET devices has almost the same electrical specifications, so we can easily replace this device in the place of 2SK117 JFET.
2SK117 vs 2SK170 vs J201
In the table below, we try to explain the electrical specs difference between 2SK117 vs 2SK170 vs J201. These specs listed will be really helpful for a better understanding and also for the replacement process.
| Characteristics | 2SK117 | J201 | 2SK170 |
|---|---|---|---|
| Source to gate voltage (VSG) | -50V | 40V | -40V |
| Gate to source cutoff voltage (VGS(OFF)) | -0.2 to -1.5V | -0.3 to -1.5V | -0.2 to -1.5V |
| Gate to source voltage (VGS) | -50V | -40V | -40V |
| Gate forward current (IG) | 10mA | 50mA | 10mA |
| Zero gate voltage drain current (IDSS) | 1.2 to 14mA | 0.2 to 1mA | 2.6 to 20mA |
| Power dissipation (PD) | 300mW | 625mW | 400mW |
| Junction temperature (TJ) | -65 to 125°C | -55 to 150°C | -55 to 125°C |
| Input capacitance (Ciss) | 13pF | - | 30pF |
| Noise figure (NF) | 5 to 10dB | - | 1 to 10dB |
| Forward transfer admittance (Yfs) | 4 to 15ms | 50umhos | 22ms |
| Package | TO-92 | TO-92 | TO-92 |
The 2SK117 vs 2SK170 devices have almost the same electrical specifications, so we use 2SK170 JFET as the equivalent of the 2SK117 transistor.
Characteristics curves of 2SK117 JFET
The figures show the static characteristics of the 2SK117 JFET transistor, the graph is plotted with drain current vs drain-source voltage and gate to source voltage.
The figure shows the noise figure vs frequency characteristics of the 2SK117 JFET transistor, the graph is plotted with the noise figure vs frequency.
At constant drain to source voltage, drain current, and temperature value, the graph is been plotted with three different resistance values.
The noise value is dipping with respect to frequency, but at the lowest resistance value, the frequency decreases.
Applications of 2SK117 JFET transistor
- Audio pre-amp circuit
- Signal amplifier circuit
- Amplifier circuit
