2SD965 transistor electrical specification
- 2SD965 is a silicon NPN epitaxial planer type transistor device
- Collector to emitter voltage is 20V
- Collector to base voltage is 40V
- Emitter to base voltage is 7V
- Collector current is 5A
- Pulsed collector current is 8A
- Power dissipation is 75W
- DC current gain is 230 to 600hFE
- Transition frequency (FT) is 150MHz
- Junction temperature is between -55 to 150℃
- Collector to emitter saturation voltage (VCE (SAT)) is 1V
- Output capacitance is 50pF
- Low saturation voltage
- High operation efficiency with low voltage power supply
- For low-frequency power amplification
- Advanced process technology
- Low error voltage
- Fast switching speed
- High power and current handling capability
|Pin Number||Pin Name||Description|
|1||Emitter||Current flows through the emitter|
|2||Collector||Current flows through the collector|
|3||Base||Base terminal is the trigger for the transistor|
The 2SD965 low voltage transistor has a TO-92 transistor package, these packages are made with epoxy/plastic material for higher heat capacity and also provide compactness for the package.
TO-92 is a three-terminal general-purpose package, they have so many advantages it is easy to use, a low-cost package, and also the small-sized body will perfectly be fitted on the PCB.
2SD965 transistor electrical specification & application note:
Here we explain the electrical specifications of the 2SD965 transistor, the detailed explanation is very helpful for a better understanding of the device, and this will be useful for the applications.
The terminal voltage value of 2SD965 transistors is a collector-to-emitter voltage is 20V, collector-to-base voltage is 40V and emitter-to-base voltage is 7V.
The collector-to-emitter saturation voltage value is 1V, it is the switching voltage value of the transistor.
The voltage specifications of the 2SD965 transistor indicated that it is a low-voltage level device that had general-purpose applications.
The collector current value of the 2SD965 transistor is 5A, and the current specs of the semiconductor device show the load capacity.
The pulsed collector current value of the 2SD965 transistor is 8A, this current value is calculated at a specific condition.
The current specifications of the 2SD965 transistor shows, it is a low-power device which having general-purpose-switching applications.
The power dissipation ability of the 2SD965 transistor is 0.75W, this value mainly depends on the package.
DC current gain specs
The current gain value of the 2SD965 transistor is 230 to 600Hfe, this device has low-level amplifier applications.
Transition frequency value of the 2SD965 transistor is 150MHz, this value is the capacity of the device for applications.
Maximum temperature value
The junction temperature and storage temperature value of the 2SD965 transistor is between -55 to +150℃.
Output capacitance value of the 2SD965 transistor is 50Pf, the capacitance range of the device is important for some applications.
If you need the datasheet in pdf please click this link
2SD965 low power transistor have equivalent devices such as KTD1146, 2SD966, ECG11, ZTX869 and ZTX8515TZ, these devices have same set of electrical specifications as 2SD965 transistor.
The specs such as voltage, current, DC current gain, and frequency are important for general-purpose low-level applications, so we need to check and verify them before the replacement process.
The device package and PINOUT details of this transistor are important, so try to maintain that at the replacement.
2SD965 vs 2SD966
Here in the table below we listed the electrical specifications of 2SD965 and 2SD966, this comparison is very useful for a better understanding of the two devices.
Characteristics 2SD965 2SD966
Collector to base voltage (VCB) 40V 40V
Collector to emitter voltage (VCE) 20V 20V
Emitter to base voltage (VEB) 7V 7V
Collector to emitter saturation voltage (VCE (SAT)) 1V 1V
Collector current (IC) 5A 5A
Pulsed collector current 8A 8A
Power dissipation 0.75W 1W
Junction temperature (TJ) -55 to +150°C -55 to +150°C
Transition frequency (FT) 150MHZ 150MHZ
Gain (hFE) 230 to 600hFE 230 to 600hFE
Output capacitance 50pF 50pF
Package TO-92 TO-92L
- AUDIO amplifier circuit
- Flasher unit of the camera
- Switching circuit
- Sensor circuit
- Detector circuit
- Radiofrequency applications
- Preamp circuit
Characteristics curves of 2SD965 transistor
The figure shows the output characteristics of the 2SD965 transistor, this is plotted with collector current vs collector to emitter voltage.
At different base current values, the collector current increases from a lower value to a higher value with respect to the collector-to-emitter voltage value.
The figure shows the safe operation area characteristics of the 2SD965 transistor, the graph plots with collector current, collector-to-emitter voltage, and switching speed.
We can use the operation curves of the 2SD965 transistor for circuit-making based on this transistor.