D882/2SD882 transistor
D882 transistor electrical specification
- 2SD882 is an NPN medium power transistor device
- Collector to emitter voltage is 30V
- Collector to base voltage is 60V
- Emitter to base voltage is 5V
- Collector current is 3A
- Peak collector current is 6A
- Base current is 1A
- Power dissipation is 5W
- DC current gain is 30 to 300hFE
- Current gain-bandwidth (FT) is 100MHz
- Junction temperature is between -65 to 150℃
- Collector to emitter saturation voltage (VCE (SAT)) is4 to 1.1V
- Thermal resistance is 10℃/W
- High current
- Low saturation voltage
D882 transistor Pinout
| Pin Number | Pin Name | Description |
| 1 | Base | The base is the trigger for the transistor |
| 2 | Collector | Current flows through the collector |
| 3 | Emitter | Current flows through the emitter |
D882 transistor package
The device package used at the D882 transistor in TO-126 is the general-purpose medium power device mainly used in common circuit applications.
The TO-126 package is a rectangular-shaped covering made with epoxy and plastic material for heat resistance, the back portion of the package is coated with metal, and also a hole in the middle for attaching a heat sink.
Marking the case
The marking for the 2SD882 transistor is D882
D882 transistor electrical specification description
In this section, we try to explain the electrical specifications of the D882 transistor, this explanation is really helpful for the replacement process.
Voltage specs
The terminal voltage specs of the D882 transistor are collector to base voltage is 60V, collector to emitter voltage is 30V, and emitter to base voltage is 5V, the voltage value shows, that this is a medium power transistor device.
The collector to emitter saturation voltage is 0.4V to 1.1V, it is the voltage value lesser than the base voltage.
The overall voltage specifications of the D882/ 2SD882 transistor show that they had applications in voltage regulator and power supply circuits.
Current specs
The base current value is 1A and the collector current value is 3A, both these current values of the D882 transistor shows that it is a medium load carrying component.
The pulsed collector current is 6A, it is the current value at the specific condition of the transistor.
Overall current specifications of the D882 transistor show that it is a perfect component for load switching and driver applications.
Dissipation specs
The power dissipation of the D882 transistor is 12.5W, the dissipation capability will mainly depend on the device package.
Current gain specs
The current gain value of the D882 transistor is 30 to 300hFE, the DC current gain values indicate the amplification capacity of the transistor.
Current gain-bandwidth transition frequency
The bandwidth transition frequency value of the D882 transistor is 100MHz, the audio system frequency range.
Junction temperature
The junction temperature of -65 to 150℃, which is a general-purpose transistor temperature value of capacity.
Thermal resistance
The thermal resistance of the D882 transistor case is 10℃/W
D882/2SD882 transistor DATASHEET
If you need the datasheet in pdf please click this link
D882 transistor equivalent
The transistor devices such as TIP31, BD679, BD136, BD349, MJE802, BD131, 2SD1693, and MJE222 are the equivalent transistors of D882.
The electrical specifications of these transistor devices are almost the same as the D882 transistor, the variation at the replacement will be correct with the circuit design.
The PINOUT changes or physical variations of the equivalent device will not be good for the circuit, so we need to check and verify the PINOUT details of the transistor before the replacement process.
D882 transistor complementary
The D882/2SD882 NPN transistor had a 2SB772 PNP complementary transistor, the electrical specs of both are the same, so we can use them as the complementary pair in some circuits.
D882 vs MJE182 vs 2SD1712
In the table below, we try to list the electrical specifications of D882, MJE182, and 2SD1712 transistors. This comparison will be really helpful for the replacement process.
| Characteristics | D882 | MJE182 | 2SD1712 |
|---|---|---|---|
| Collector to base voltage (VCB) | 60V | 100V | 100V |
| Collector to emitter voltage (VCE) | 30V | 80V | 100V |
| Emitter to base voltage (VEB) | 5V | 7V | 5V |
| Collector to emitter saturation voltage (VCE (SAT)) | 0.4 to –1.1V | 1.5 to 2V | 2V |
| Collector current (IC) | 3A | 3A | 5A |
| Power dissipation | 12.5W | 12.5W | 60W |
| Junction temperature (TJ) | -65 to +150°C | -65 to +150°C | -55 to +150°C |
| Thermal resistance | 10℃/W | 10℃/W | - |
| Transition frequency (FT) | 100MHZ | 50MHZ | 20MHZ |
| Gain (hFE) | 30 to 300hFE | 12 to 250hFE | 20 to 200hFE |
| Package | TO-126 | TO-126 | TO-3p |
D882/ 2SD882 SMD version transistor
The D882 transistor had SMD version transistors such as D882 (SOT-89) and D882M (SOT-23), the dissipation value of the SMD version transistor is different from the through-hole model.
D882 transistor applications
- Voltage regulator
- Relay drivers
- Generic switches
- Audio power amplifier
- DC-DC converter
- H-bridge circuits
- Multi-vibrator circuits
- Switching load under 3A
- Darlington pair
D882 transistor characteristics curve
The figure shows the DC current gain characteristics of the D882 transistor, the graph is plotted with current gain vs collector current.
At fixed voltage values, the DC current gain increases from a higher value and drops towards the lowest value.
The figure shows the collector to emitter saturation voltage characteristics of the D882 transistor, the graph is plotted with VCE(SAT) VS collector current.
