2SD313 transistor
2SD313 transistor electrical specification
- 2SD313 is a silicon NPN epitaxial planer transistor device
- Collector to emitter voltage is 60V
- Collector to base voltage is 60V
- Emitter to base voltage is 5V
- Collector current is 3A
- Pulsed collector current is 8A
- Base current value is 1A
- Power dissipation is 30W
- DC current gain is 40 to 320hFE
- Transition frequency (FT) is 5MHz
- Junction temperature is between -55 to 150℃
- Collector to emitter saturation voltage (VCE (SAT)) is 1V
- Thermal resistance is between the junction to the case is 16℃/W
- Low collector to the emitter saturation voltage
- Low DC current gain
2SD313 Pinout
| Pin Number | Pin Name | Description |
| 1 | Base | The base is the trigger for the transistor |
| 2 | Collector | Current flows through the collector |
| 3 | Emitter | Current flows through the emitter |
2SD313 package
The medium-power 2SD313 transistor has a TO-220 package, it is used for higher-level applications.
TO-220 package is made of epoxy/plastic material for higher temperature capacity and compactness.
TO-220 is a bulkier through-hole package, so we can easily attach a heat sink with it for an excessive heat transferring method.
2SD313 transistor electrical specification & application description
Here in this section, we describe the electrical specifications of the 2SD313 transistor, this is very useful for a better understanding of the transistor, and this information is also useful for the replacement process.
Voltage specs
The voltage specs of the 2SD313 transistor are a collector-to-emitter voltage is 60V, a collector-to-base voltage is 60V, and an emitter-to-base voltage is 5V, the voltage specifications show that it is an amplification and switching circuit.
The collector-to-emitter saturation voltage value of the 2SD313 transistor is 1V, it is the switching voltage of the device.
Current specs
The collector current value of the 2SD313 transistor is 3A, it is the maximum load capacity of this device.
The pulsed collector current value of the 2SD313 transistor is 8A, it is the maximum current at pulsed condition.
The base current value of the 2SD313 transistor is 1A, it is the maximum switching current value of the device.
Dissipation specs
The dissipation value of the 2SD313 transistor is 30W, this value is mainly dependent on the device package.
DC current gain specs
The DC current gain value of the 2SD313 transistor is 40 to 320Hfe, this value is used for amplification circuit applications.
Transition frequency
The transition frequency value of the 2SD313 transistor is 5MHz, this value is applicable at the circuit level.
Maximum temperature value
The maximum temperature is a combination of junction temperature and storage temperature, the temperature value is between -55 to +150℃.
Thermal resistance
The thermal resistance value of the 2SD313 transistor is 4.16℃/W.
2SD313 DATASHEET
If you need the datasheet in pdf please click this link
2SD313 equivalent
The 2SD313 transistor device equivalents such as 2SC1826, 2SC3179, 2SD1274, 2SD613, BD203, BD931, 2SD880, 2SD330, and 2SC1226, each of these devices have the same set of electrical specifications.
2SD313 transistor is mainly used for amplification and switching applications, so specifications such as voltage, DC current gain, and current value are very important.
Before the replacement, we need to check and verify the above specifications, because it is very dangerous at the circuit level.
2SD313 transistor complementary
The 2SD313 NPN transistor has a complementary PNP 2SB507 transistor, both of these transistor devices are been combined to form a Darlington pair and push-pull circuit.
2SD313 vs 2SD880 vs 2SC1826
In the table below we listed the electrical specifications of 2SD313, 2SD880, and 2SC1826, this comparison is helpful for the replacement process.
Characteristics 2SD313 2SD880 2SC1826
Collector to base voltage (VCB) 60V 60V 80V
Collector to emitter voltage (VCE) 60V 60V 60V
Emitter to base voltage (VEB) 5V 7V 6V
Collector to emitter saturation voltage (VCE (SAT)) 1V 1V 1V
Collector current (IC) 3A 3A 4A
Pulsed collector current 8A 6A -
Power dissipation 30W 30W 30W
Junction temperature (TJ) -55 to +150°C -55 to +150°C -55 to +150℃
Thermal resistance 4.16℃/W 4.16℃/W -
Transition frequency (FT) 5MHZ 3MHZ 10MHz
Gain (hFE) 40 to 320hFE 60 to 300hFE 40 to 320hFE
Package TO-220 TO-220C To-220
2SD313 transistor applications
- General purpose amplifier circuit
- Switching circuit
- AF power amplifier circuit
- Darlington pair circuit
2SD313 transistor characteristics curves
The figure shows the static characteristics of the 2SD313 transistor, and the graph plots with collector current vs collector to emitter voltage.
Multiple curves are been plotted at different base current values, as when the base current value increases collector current increases and forms a higher value curve with the collector to emitter voltage.
The figure shows the DC current gain characteristics of the 2SD313 transistor, the graph plots with DC current gain vs collector current.
At a constant collector-to-emitter voltage value, the DC current gain curves are been plots at three different temperature values.
The DC current gain curves is been increased from a particular value and become constant and decrease at the end.
The figure shows the safe operating area characteristics of the 2SD313 transistor, the curve plots with collector current vs collector to emitter voltage and switching speed.
