2SC828 transistor

2SC828 transistor
2SC828 transistor

2SC828 transistor electrical specification

  • 2SC828 is a NPN silicon epitaxial planer transistor
  • Collector to emitter voltage is 25V
  • Collector to base voltage is 30V
  • Emitter to base voltage is 7V
  • Collector current is 50mA
  • Pulsed collector current is 100mA
  • Power dissipation is 400mW
  • DC current gain for Q= 130 to 280 hFE
    • R= 180 to 360 hFE
    • S= 260 to 520 hFE
  • Gain Bandwidth (FT) is 220MHz
  • Junction temperature & operating temperature is between -55 to +150
  • Collector to emitter saturation voltage (VCE (SAT)) is14V
  • Noise figure is 6dB
  • It is an amplifier transistor device

2SC828 transistor Pinout

2SC828 transistor Pinout
2SC828 transistor Pinout
Pin Number Pin Name Description
1 Emitter Current flows through the emitter terminal
2 Collector Current flows through the collector
3 Base  The base is the trigger for the transistor 


2SC828 transistor package

The 2SC828 transistor use TO-92 as the transistor package, it is a general-purpose transistor package used for low-power applications.

TO-92 is a package made with epoxy/plastic material, which is been good at heat resistance and less weight as a material.

The compactness of the TO-92 package is been a great advantage for making it a circuit network.

Marking in case

The 2SC828 transistor had a “C828” marking on its case

2SC828 transistor electrical specification & application description 

Voltage specs

The voltage specs of the 2SC828 transistor are collector to emitter voltage is 25V, collector to base voltage is 30V, and emitter to base voltage is 7V, which is the terminal voltage value of this device.

The collector to emitter saturation voltage is 0.14V, it is the voltage value always less than the base voltage and it is the region switching voltage value.

The overall voltage values of the 2SC828 transistor show that it is a general-purpose NPN transistor mainly used for amplifier-based applications.

Current specs

The collector current value of 2SC828 is 50mA, the current value shows the load capacity, and it is under 50mA.

The pulsed collector current value is 100mA, it is a current value calculated at a specific condition.

Dissipation specs

The power dissipation value of the 2SC828 transistor is 400mW, the power dissipation of the device mainly depends on the case.

Current gain specs

The 2SC828 transistor has three models on different DC current gain values such as Q= 130 to 280hFE, R= 180 to 360Hfe, and S= 260 to 520hFE.

The DC current gain values show that it is an amplifier transistor.

Transition frequency/ Bandwidth frequency specs

The transition frequency value is 220MHz, and the frequency ranges of the 2SC828 transistor show that it is good at amplifier applications.

Junction temperature

The junction temperature of -55 to 150℃, this is the most common temperature value for a low-power transistor device.

Noise figure

The noise figure value of the 2SC828 transistor is 6dB

2SC828 transistor DATASHEET

If you need the datasheet in pdf please click this link

2SC828 transistor equivalent

The transistor devices such as 2N3394, 2N3708, 2SC1815, 2SC2458, 2SC2785, 2SC2960, 2SD1347, KTC3199, BC167, 2SD789 and 2SC3919 are the equivalent of 2SC828 transistor. The electrical specifications of these transistor devices are the same, so we can use them as the replacement for the circuit of the 2SC828 transistor.

The physical specifications of these transistors need to check and verify before the replacement process.

2SC828 complementary transistor  

The 2SC828 transistor has 2SA564 PNP transistor complementary pair, the electrical specs of both these transistors are the same and opposite.

2SC828 SMD version transistor

The SMD transistor MMBTH10 (SOT-23) is the SMD equivalent of the 2SC828 transistor.

2SC828 vs 2N3394 vs 2N3708

In the table below, we list the electrical specifications of  2SC828 vs 2N3394 vs 2N3708 transistors, the comparison table is really useful for better understanding and also we can use them as the equivalent at circuits.

Collector to base voltage (VCB)30V25V30V
Collector to emitter voltage (VCE)25V25V30V
Emitter to base voltage (VEB)7V5V6V
Collector to emitter saturation voltage (VCE (SAT))0.14V-1V
Collector current (IC)50mA500mA0.2A
Power dissipation400mW625mW625mW
Junction temperature & operating temperature (TJ)-55 to 150°C150°C150°C
Transition frequency (FT)220MHZ--
Gain (hFE)Q= 130 to 280hFE55 to 110hFE45 to 660hFE
R= 180 to 360Hfe
S= 260 to 520hFE
Noise figure6dB1.9 to 5dB5dB

Applications of 2SC828 transistor

  • Switching applications
  • AF amplifier applications
  • AF turner circuit
  • Oscillator driver circuit
  • Medium speed applications

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