2SC4793 transistor
2SC4793 specification
- 2SC4793 is an NPN silicon epitaxial type transistor device
- Collector to emitter voltage is 230V
- Collector to base voltage is 230V
- Emitter to base voltage is 5V
- Collector current is 1A
- Base current is 1A
- Power dissipation is 2W
- DC current gain is 100 to 320hFE
- Gain Bandwidth transition frequency (FT) is 100MHz
- Junction temperature & operating temperature is between -55 to +150℃
- Collector to emitter saturation voltage (VCE (SAT)) is5V
- Output capacitance (Cob) is 20pF
2SC4793 Pinout
| Pin Number | Pin Name | Description |
| 1 | Base | Base terminal is the trigger for the transistor |
| 2 | Collector | Current flows through the collector |
| 3 | Emitter | Current flows through the emitter terminal |
2SC4793 transistor package
The 2SC4793 high voltage transistor device has a TO-220 package, these transistors are been used in power circuit applications.
TO-220 is a three-terminal bulkier device package, mainly outer covering of the package is made of epoxy/plastic material which had higher temperature capacity and less weight as an electronic component.
TO-220 package is compact and they had a provision to attach a heat sink with it, this is possible due to the metal coating at the backside of the package which is used to transfer heat.
2SC4793 transistor electrical specification & application description
This is an electrical specification explanation of the 2SC4793 transistor, it is very useful for a better understanding of the device and helpful for the replacement process.
Voltage specs
The voltage specs of the 2SC4793 transistor are collector to emitter voltage is 230V, collector to base voltage is 230V, and emitter to base voltage is 5V, which is the terminal voltage value.
The collector to emitter saturation voltage value of the 2SC4793 transistor is 1.5V, it is the product of voltage and current at the device.
The voltage specifications of the 2SC4793 transistor such as terminal voltage and saturation voltage show it is a high voltage device.
Current specs
The collector current value is 1A at 2SC4793 transistor, it is the maximum load capacity of the device.
The base current value is 0.1A, it is the triggering value needed for the 2SC4793 transistor.
Dissipation specs
The power dissipation value of the 2SC4793 transistor is 2W, it is the overall product of voltage and current, this is been mainly depends on the device package.
DC Current gain specs
The DC current gain value of the 2SC4793 transistor is 100 to 320hFE, the gain value of the transistor shows the amplification ability.
Transition frequency
The transition frequency of the 2SC4793 transistor is 100MHz, it is the frequency range of the device.
Junction temperature/ operating temperature
The junction temperature or storage temperature is -55 to 150℃.
Output capacitance
The output capacitance of the 2SC4793 transistor is 20Pf
2SC4793 transistor DATASHEET
If you need the datasheet in pdf please click this link
2SC4793 equivalent
The 2SC4793 HIGH voltage transistor equivalent devices are BUX85, 2SC2898, 2SD792B, MJE15034, MJE16004, 2SC3310, and MJE13070, these transistor devices have the almost same set of electrical specifications.
At the circuit level, we need to check and verify specs like the voltage, PINOUT details, and current values properly before the replacement process.
2SC4793 transistor complementary
The 2SC4793 NPN transistor has complementary pair 2SA1837 PNP transistor, both of them have the same and opposite set of electrical specifications, so we can easily use them at circuits like push-pull.
2SC4793 vs 2SC5171 vs 2SC2336B
In this table, we listed the electrical specification comparison of 2SC4793, 2SC5171, and 2SC2336B, this is very useful for a better understanding of the devices for the replacement process.
| Characteristics | 2SC4793 | 2SC5171 | 2SC2336B |
|---|---|---|---|
| Collector to base voltage (VCB) | 230V | 180V | 250V |
| Collector to emitter voltage (VCE) | 230V | 180V | 250V |
| Emitter to base voltage (VEB) | 5V | 5V | 5V |
| Collector to emitter saturation voltage (VCE (SAT)) | 1.5V | 0.16 to 1V | 0.4 to 1V |
| Collector current (IC) | 1A | 2A | 1.5A |
| Power dissipation | 2W | 2W | 25W |
| Junction temperature & operating temperature (TJ) | -55 to 150°C | -55 to +150°C | -55 to +150°C |
| Transition frequency (FT) | 100MHZ | 200MHz | 95MHz |
| Gain (hFE) | 100 to 320hFE | 100 to 320hFE | 60 to 320hFE |
| Output capacitance | 20pF | 16pF | 30pF |
| Package | TO-220 | TO-220 | TO-220 |
2SC4793 transistor application
- Power amplifier application
- Driver stage amplifier circuit
- High-power audio amplifier
- Motor driver circuit
- RF amplifier circuit
- Radiofrequency applications
Characteristics curves of 2SC4793 transistor
The figure shows the collector current vs collector to emitter voltage characteristics of the 2SC4793 transistor.
At different base current values, the collector current increases and become constant initially, then at the peak collector current increases towards a higher value.
The figure shows the DC current gain characteristics curves of the 2SC4793 transistor and the graph plots with dc current gain vs collector current.
At constant collector to emitter voltage, three gain values are been plotted at different temperature values.
The figure shows the safe operating area characteristics of the 2SC4793 transistor, the graph plots with collector vs collector to emitter voltage and switching speed and temperature values.
