2SC2078 transistor specification
- 2SC2078 is an NPN RF power transistor device
- Collector to emitter voltage is 75V
- Collector to base voltage is 80V
- Emitter to base voltage is 5V
- Collector current is 3A
- Power dissipation is 2W
- DC current gain is 20 to 200hFE
- Transition frequency is 100MHz
- Gain Bandwidth FT= 100 to 150MHz
- Junction temperature is between –55 to 150℃
- Collector to emitter saturation voltage (VCE (SAT)) is 15 to 0.6V
- Output power (PO) is 0W
- Power efficiency (ἠ) 60%
2SC2078 transistor Pinout
|The base is the trigger for the transistor
|Current flows through the collector
|Current flows through the emitter
2SC2078 transistor package
The transistor 2SC2078 had the package of TO-220, it is a high and medium power transistor device package.
The TO-220 transistor package is a large packing made with epoxy plastic and metal covering, the metal covering at the bottom portion will be used to transfer the heat towards the heat sink.
This type of transistor package are been mainly used at higher power transistor devices.
2SC2078 transistor electrical specification description
The 2SC2078 transistor is an RF power amplifier device, in this section we try to explain the electrical specifications and application description of this transistor.
The terminal voltage value of this transistor is a collector to base voltage is 80v, collector to emitter voltage is 75v, and emitter to base voltage is 5v, the voltage values show it is a higher power device.
The collector current value is 5A, the current value is taken as the maximum load capacity of this transistor
The power dissipation of the 2SC2078 transistor is 1.2W, this shows the power carrying capacity or heat withstanding capacity.
Current gain specs
The current gain value is between 25 to 200hFE, the gain will be very important for the amplifier and stabilizing applications.
Transition frequency specs
The transition frequency is 100MHz, the frequency value will be used for RF amplifier devices.
The junction temperature of -55 to 150℃, this is the most common temperature value for a higher power transistor device.
2SC2078 transistor DATASHEET
If you need the datasheet in pdf please click this link
2SC2078 transistor equivalent
The 2SC2078 transistors had the equivalent devices such as 2SC2075, 2SD1274B, BD241B, TIP41E, and TIP42E.
These are the most common transistor equivalent for 2SC2078, the electrical specifications of all these transistors are the same.
We can easily replace 2SC2078 with these transistors, we need to check the pin-out details and electrical value before a replacement.
2SC2078 vs 2SC2075 vs TIP42E
The table shown is used to compare each of these transistors’ electrical specifications, this comparison table will help us to make an understanding of these 2sc2078 vs 2SC2075 vs TIP42E equivalent transistor devices.
Characteristics 2SC2078 2SC2075 TIP42E
Collector to base voltage (VCB) 80V 80V 180V
Collector to emitter voltage (VCE) 75V 80V 140V
Emitter to base voltage (VEB) 5V 4V 5V
Collector current (IC) 3A 4A 6A
Power dissipation 1.2W 10W 65W
Junction temperature (TJ) 150°C 150°C 150°C
Transition frequency (FT) 100MHZ 100MHZ 3MHZ
Noise (N) - - -
Gain (hFE) 25 to 200hFE 25hFE 15hFE
Package TO-220 TO-220 TO-220
The comparison table shows that 2SC2078 and 2SC2075 transistors had almost the same electrical specifications, but the 2SC2075 transistor had higher values at DC current gain and power dissipation values compared to the 2SC2078 transistor.
The TIP42E transistor is the high power transistor in this comparison, because voltage, current, and power dissipation values are high at TIP42E compared to both transistors.
2SC2078 transistor characteristics
The figure shows the characteristics curves of the 2SC2078 transistor, the graph is drawn between collector current vs collector to emitter voltage.
The characteristic curve shows that when the collector current increases the voltage becomes linear.
The figure shows the gain bandwidth vs collector current curve, this is very useful for amplifier circuit applications.
The graph shows that bandwidth decreases when collector current increases.