C2073 transistor

C2073 transistor
C2073 transistor

C2073/2SC2073 transistor electrical specification

  • C2073 is an NPN epitaxial silicon transistor device
  • Collector to emitter voltage is 150V
  • Collector to base voltage is 150V
  • Emitter to base voltage is 5V
  • Collector current is 5A
  • Maximum base current is 5A
  • Power dissipation is 5W
  • DC current gain is 40 to 140hFE
  • Current gain-bandwidth (FT) is 4MHz
  • Junction temperature is between -55 to 150℃
  • Collector to emitter saturation voltage (VCE (SAT)) is5V
  • Output capacitance (Ciss) is 35pF
  • Minimum Lot-to-Lot variation for robust device performance
  • Reliable operation
  • Wide area of safe operation

C2073 transistor Pinout

C2073 transistor Pinout
C2073 transistor Pinout
Pin Number Pin Name Description
1 Base Base terminal is used to trigger the transistor
2 Collector Current flow through the collector 
3 Emitter  Current flows through the emitter


C2073 transistor package

The 2SC2073/C2073 transistor has a TO-220C package, it is commonly used for the power transistor.

TO-220 package is made with epoxy/plastic, which is been used for thermal stability of the device, and the backside metal covering is used for heat transferring towards the heat sink.

It is a three-terminal device mainly used for power applications, this is the reason for the usage of this package.

Marking the case

The 2SC2073 transistor component had a “C2073” marking on its case 

C2073 transistor electrical specification description/ application

In this section we try to explain the electrical specifications of the C2073 transistor, this description is really helpful for a better understanding of this device.

Voltage specs

The terminal voltage specs of the C2073 transistor are collector to base voltage is 150V, collector to emitter voltage is 150V, and emitter to base voltage is 5V, the transistor had high voltage specs.

The collector to emitter saturation voltage is 1.5V, it is the voltage value at a specific condition and the voltage value is always less than the base voltage.

Overall voltage specifications of the C2073 transistor show, that it is a device having high voltage specs and they are been used in power applications.

Current specs

The collector current value of the C2073 transistor is 1.5A, it is the load capacity of the device, which means we can have a load value under 1.5A.

The base current value of the C2073 transistor is 0.5A, it is the maximum current value to trigger the device.

Dissipation specs

The power dissipation of the C2073 transistor is 1.5W, it is the power dissipation of the device.

The dissipation ability of the device mainly depends on the device package and applications.

Current gain specs

The current gain value of the C2073 transistor is 40 to 140hFE, the gain of the device shows the amplification capability.

Transition frequency

The transition frequency value of the C2073 transistor is 4MHz, it is the frequency range of the transistor.

Junction temperature

 With the junction temperature of -55 to 150℃, the heat capacity of the transistor is mainly dependent on the case.

Output capacitance

The output capacitance value of the C2073 transistor is 35pF

C2073 transistor DATASHEET

If you need the datasheet in pdf please click this link

C2073 transistor equivalent

The transistors such as 2SC1410, 2SC1447, 2SC1448, TIP41F, KSC2073, 2SD792A, 2SD610, 2SD772, 2SA940 and MJE15030 are the equivalent of C2073 transistor. The electrical specifications of the C2073/ 2SC2073 transistor are the same, so we can use them for the replacement process at circuits.

C2073 transistor complementary pair

The PNP transistor 2SA940 is the complementary pair of NPN transistor 2SC2073/C2073.

C2073/ 2SC2073 transistor SMD version

The SMD version transistor FMMT625 (SOT-23) is the SMD equivalent of the C2073 transistor.

C2073 vs 2SD401 vs TIP41F

In this table, we try to list the electrical specifications of three transistor devices such as C2073, 2SD401, and TIP41F, this listing is really helpful for a better understanding of the devices.

Collector to base voltage (VCB)    150V200V200V
Collector to emitter voltage (VCE)150V150V160V
Emitter to base voltage (VEB)5V5V5V
Collector to emitter saturation voltage (VCE (SAT))1.5V      1V1.5V
Collector current (IC)1.5A2A6A
Power dissipation1.5W25W      65W
Junction temperature (TJ)-55 to +150°C-55 to +150°C-65 to +150°C
Transition frequency (FT)4MHZ5MHZ    3MHz
Gain (hFE)40 to 140hFE40 to 400hFE15hFE
Output capacitance35pF--

C2073 transistor applications

  • Power amplifier applications
  • Vertical output applications
  • General-purpose applications
  • Darlington pair

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