2SC1971 transistor
2SC1971 transistor electrical specification
- 2SC1971 is an NPN silicon POWER BJT transistor device
- Collector to emitter voltage is 17V
- Collector to base voltage is 35V
- Emitter to base voltage is 4V
- Collector current is 2A
- Power dissipation is 5W
- DC current gain is 10 to 180hFE
- Junction temperature/storage temperature is between -55 to 150℃
- Thermal resistance junction to the case is 10℃/W
- Output power is 6 to 7W
- High power gain
- High reliability
2SC1971 transistor Pinout
| Pin Number | Pin Name | Description |
| 1 | Base | The base terminal is used to trigger the transistor |
| 2 | Emitter | Current flows through the emitter |
| 3 | Collector | Current flow through the collector |
2SC1971 transistor package
The 2SC1971 transistor has a TO-220AB package, it is a powerful device. It is made of epoxy/plastic material.
TO-220AB package has a higher temperature capacity, this is due to its bulkiness as an electronic component.
TO-220AB is a through-hole package, so we can easily attach a heat sink with it for heat transfer.
2SC1971 transistor electrical specification
Here in this section, we explain the electrical specifications of the 2SC1971 transistor, this explanation is very important for better understanding.
Voltage specs
The voltage specification of the 2SC1971 transistor is a collector-to-base voltage is 35V collector-emitter voltage is 17V and emitter-to-base voltage are 4V, the voltage specs suggest that it is a medium power device used for audio applications.
Current specs
The collector current value of the 2SC1971 transistor is 2A, the current value is the load capacity of the device.
Dissipation specs
The power dissipation value of the 2SC1971 transistor is 12.5W, the dissipation value mainly depends on the device package.
Current gain specs
The DC current gain value of the 2SC1971 transistor is 10 to 180Hfe, this value is important for amplifier applications.
Junction temperature/ storage temperature
The maximum temperature value of the 2SC1971 transistor is -55 to +150℃, the higher temperature value is important for amplifier applications.
Thermal resistance between junctions to case
The thermal resistance value of the 2SC1971 transistor is 10℃/W.
Output power
The output power value of the 2SC1971 transistor is 6 to 7W
2SC1971 DATASHEET
If you need the datasheet in pdf please click this link
2SC1971 equivalent
The 2SC1971 transistor has equivalent devices such as 2SC1972, 2SC1978, 2SC2907, 2SC1005, and 2SC1003, each of these devices same set of electrical specifications.
The specifications of the transistor show it is an amplifier device, so specs such as voltage, DC current gain, and output power values are important, these specs are been verified to become the replacement process.
2SC1971 vs 2SC5198
The table below is used to list and compare the electrical specifications of 2SC1971 and 2SC5198 transistors, this comparison is helpful for a better understanding.
| Characteristics | 2SC1971 | 2SC5198 |
|---|---|---|
| Collector to base voltage (VCB) | 35V | 140V |
| Collector to emitter voltage (VCE) | 17V | 140V |
| Emitter to base voltage (VEB) | 4V | 5V |
| Collector current (IC) | 2A | 10A |
| Power dissipation | 12.5W | 100W |
| Junction temperature (TJ) | -55 to +150°C | -55 to +150°C |
| Thermal resistance | 10℃/W | - |
| Output power | 6 to 7W | 170W |
| Gain (hFE) | 10 to 180hFE | 55 to 180hFE |
| Package | TO-220AB | TO-3p |
2SC1971 transistor applications
- RF power amplifier circuit
- VHF band mobile radio applications
- Radio circuit
- RF oscillator circuit
- TV set applications
- Switching circuit applications
2SC1971 FM transmitter circuit
The figure shows the FM transmitter circuit using the 2SC1971 transistor, the circuit consists of 2SC1971 and several passive components.
