2SC1969 transistor specification
- It is an epitaxial planer type transistor
- Collector to emitter voltage is 25V
- Collector to base voltage is 60V
- Emitter to base voltage is 5V
- Collector current is 6A
- Power dissipation is 1.7W
- DC current gain is 10 to 180hFE
- Transition frequency is 75MHz
- Junction temperature is between -55 to 150℃
- Thermal resistance (Rth-a) is 73.5℃/w
- Collector to emitter breakdown voltage is 25V
- RF power amplifier device
- HF band mobile radio applications
- Class AB amplifier applications
2SC1969 transistor Pinout
|Pin Number||Pin Name||Description|
|1||Base||The base is the trigger for the transistor|
|2||Collector||Current flows through the collector|
|3||Emitter||Current flows through the emitter|
2SC1969 transistor package
The package used at 2SC1969 transistor in TO-220 is a common power transistor package.
The power withstanding capacity of the 2SC1969 transistor is higher due to the outer covering TO-220, the TO-220 is made with a combination of epoxy plastic and metal covering on the backside.
The backside metal covering helps the transistor to transfer heat to the heat sink, easy installation of the heat sink is another advantage.
2SC1969 transistor electrical specification description
The 2SC1969 is a HIGH power transistor type main used at RF or HF power amplifier applications, in this section we try to explain each of the electrical specifications separately.
The terminal voltages such as collector to the base are 60v, emitter to the base is 5v, and collector to emitter is 25v, the voltage specs show that 2SC1969 transistor is a HIGH power device.
The collector current at 2SC1969 is 6A, the current value shows the maximum load capacity of a transistor.
The power dissipation of this transistor is 1.7w, it is the heat withstanding capacity of the 2SC1969 transistor.
Current gain specs
The current gain value is between 10 to 180hFE, the gain will be very important for the amplifier applications.
Transition frequency specs
The transition frequency is 75MHz, the frequency value will be used for RF and HF frequency devices.
The junction temperature of -55 to 150℃, this is the most common temperature value for a general-purpose transistor device.
2SC1969 transistor DATASHEET
If you need the datasheet in pdf please click this link
2SC1969 transistor equivalent
The transistor 2SC1969 have equivalents such as 2SC100, 2SC1000, 2SC1005, 2SC1000GTM and 2SC1005.
The electrical and physical specifications of all these transistors are the same, so we can easily use them as the equivalent for 2SC1969.
2SC1969 vs 2SC100 vs 2SC1005A
The table shown is used to compare each of these transistors’ electrical specifications, this comparison table will help us to make an understanding of these equivalent transistor devices.
|Collector to base voltage (VCB)||60V||40V||1400V|
|Collector to emitter voltage (VCE)||25V||15V||600V|
|Emitter to base voltage (VEB)||5V||5V||5V|
|Collector current (IC)||6A||0.2A||5A|
|Junction temperature (TJ)||150°C||150°C||150°C|
|Transition frequency (FT)||75MHZ||300MHZ||1MHZ|
|Gain (hFE)||10 to 180hFE||-||-|
Each of these transistors has the same electrical specifications, the 2SC1969 and 2SC100 have almost the same power specs.
The 2SC1005A transistor is a higher power device, so compare with the other two transistors, it had a peak voltage and current values.
2SC1969 transistor characteristics curves
The characteristics curve shows the output power vs collector supply curve, the graph linearly increases.
The curves show that output power will increases proportionally to the collector supply voltage.
The characteristics graph for the 2SC1969 transistor shows the DC current gain vs collector current curve.
At the initial stages, DC current gain will increases proportionally to collector current, and then at the final portion, it will decreases accordingly.