2SC1740 transistor

2SC1740 transistor
2SC1740 transistor

C1740 transistor electrical specification

  • 2SC1740 is an NPN silicon epitaxial planer transistor device
  • Collector to emitter voltage is 50V
  • Collector to base voltage is 60V
  • Emitter to base voltage is 5V
  • Collector current is 150mA
  • Power dissipation is 300mW
  • DC current gain is 270 to 560hFE
  • Junction temperature/storage temperature is between -55 to 150℃
  • Transition frequency is 180MHz
  • Output capacitance is 2 to 3.5pF

2SC1740 Pinout

2SC1740 Pinout
2SC1740 Pinout
Pin Number Pin Name Description
1 Emitter  Current flows through the emitter
2 Collector Current flow through the collector
3 Base Base terminal is used to trigger the transistor

 

2SC1740 package

The 2SC1740 medium power transistor has a TO-92 device package, it is commonly used as the general-purpose device package.

TO-92 is a three-terminal package made of epoxy/plastic material which increases the temperature capacity of the device.

The shape and size of the package will make them used in small-scale circuit applications. 

2SC1740 transistor electrical specification/application note:

Here in this section, we explain the electrical specifications of the 2SC1740 transistor, this detailed explanation is really useful for a better understanding of the device.

Voltage specs

The terminal voltage specifications of the C1740 transistor are collector to base voltage is 60V, collector-to-emitter voltage is 50V, and emitter-to-base voltage is 5V, the voltage values show that it is a medium power transistor device.

The collector-to-emitter saturation voltage value is 0.4V, which is the switching voltage value of the C1740 transistor.

As we can see C1740 transistors are used for small-scale applications such as general-purpose circuits, so a medium voltage value is apt for such application options.

Current specs

The collector current value of the 2SC1740 transistor is 150mA, the current values at devices will indicate the maximum load capacity.

C1740 transistors are been used for small-scale driver and switching application circuits.

Dissipation specs

The power dissipation ability of the 2SC1740 transistor is 300mW, it is the product of the voltage and current values of the device.

Current gain specs

The DC current gain value of the C1740 transistor is 270 to 560Hfe, this particular value is important for applications like amplifier circuits.

Junction temperature/ storage temperature

The maximum temperature value of the 2SC1740 transistor is -55 to +150℃.

Transition frequency

The transition frequency value of the C1740 transistor is 180MHz, the frequency value is important at the circuit level.

Output capacitance

The output capacitance value of the 2SC1740 transistor is 2 to 3.5pF, for applications like amplifier circuits, this value is very important.

2SC1740 DATASHEET

If you need the datasheet in pdf please click this link

C1740 equivalent

2SC1740 or C1740 general-purpose transistors have equivalent devices such as 2SC2412K, 2SC1852, BC337, 2SC4051, and 2SC4617, each of these transistors has almost the same set of electrical specifications, so we can replace them with C1740 transistor.

2SC1740 transistors have general-purpose applications, so we need to check replacement transistor specs such as voltage, current, DC current gain, and PINOUT details before the process.

2SC1740 complementary

2SC1740 is an NPN transistor device that had a complementary 2SA933AS PNP transistor device, each number has the same and opposite electrical specifications, which is very useful for circuits like Darlington pair and push-pull application circuits

C1740 vs 2SC4617 vs BC337

In the table below we list and compare the electrical specifications of C1740 vs 2SC4617 vs BC337 transistor devices, this comparison is really useful for a better understanding of the device.

Characteristics2SC17402SC4617BC337
Collector to base voltage (VCB)60V50V50V
Collector to emitter voltage (VCE)50V50V45V
Emitter to base voltage (VEB)5V5V5V
Collector current (IC)150mA100mA800Ma
Power dissipation300mW125mW1.5W
Junction temperature (TJ)-55 to +150°C-55 to +150°C-55 to +150℃
Thermal resistance--200℃/W
Transition frequency180MHz180MHz210MHz
Output capacitance2 to 3.5pF2pF15pF
Gain (hFE)270 to 560hFE120 to 560hFE100 to 630hFE
PackageTO-92TO-92TO-92

C1740 transistor applications

  • AF amplifier circuit applications
  • Switching circuit
  • General purpose amplifier circuit
  • Preamp circuit
  • Signal amplifier circuit
  • Darlington pair circuit

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