2SC1419 transistor electrical specification
- C1419 is an NPN silicon transistor device
- Collector to emitter voltage is 50V
- Collector to base voltage is 50V
- Emitter to base voltage is 5V
- Collector current is 2A
- Pulsed collector current is 3A
- Power dissipation is 20W
- DC current gain is 35 to 320hFE
- Junction temperature/storage temperature is between -55 to 150℃
- Transition frequency is 5MHz
- Output capacitance is 2 to 3.5pF
- Large power dissipation
|Pin Number||Pin Name||Description|
|1||Base||Base terminal is used to trigger the transistor|
|2||Collector||Current flow through the collector|
|3||Emitter||Current flows through the emitter|
2SC1419 power transistors have a TO-220 device package, it is a three-terminal bulkier transistor package.
TO-220 is a three-terminal through-hole package mainly used for power transistor devices, it is made of epoxy/plastic material for high-temperature capacity and the back portion of this device is made of metal for heat transferring features.
C1419 transistor electrical specification/application note:
Here in this section, we explain the electrical specifications of the 2SC1419 transistor, this detailed explanation is really useful for a better understanding of the device for circuit applications.
The terminal voltage specifications of the C1419 transistor are collector to base voltage is 50V, collector to emitter voltage is 50V and emitter to base voltage is 5V, the voltage specs show it is a medium voltage device used for multiple applications.
The collector-to-emitter saturation voltage is 1V, this value is important at the switching of the device.
The collector current value of the C1419 transistor is 2A and the pulsed collector current value is 3A, it is the maximum load capacity of the device.
The power dissipation value of the C1419 transistor is 20W, this value is the product of the voltage and current value of the device.
Current gain specs
The DC current gain value of the C1419 transistor is 35 to 320hFE, these specs if important for amplifier applications.
Junction temperature/ storage temperature
The maximum temperature value of the C1419 is -55 to +150℃.
The transition frequency value of C1419 is 5MHz.
If you need the datasheet in pdf please click this link
2SC1419 transistor has equivalent devices 2SC1061, 2SC1418, 2SD1274, BD203, BD303, BD799, BD809, and BDX77, the C1419 transistor is mainly used for amplifier circuit, switching circuit, and power handling circuits, so the specs such as voltage, current, power dissipation, DC current gain, and PINOUT is important, so check and verify at each of these transistors before the replacement process.
C1419 NPN power transistor has complementary pair 2SA755 PNP transistor, both of them have the same and opposite set of electrical specifications, so we can use them at push-pull and Darlington pair circuits.
C1419 vs 2SC1061
|Collector to base voltage (VCB)||50V||50V|
|Collector to emitter voltage (VCE)||50V||50V|
|Emitter to base voltage (VEB)||5V||4V|
|Collector to emitter saturation voltage||1V||-|
|Collector current (IC)||2A||3A|
|Pulsed collector current (ICM)||3A||8A|
|Junction temperature (TJ)||-55 to +150°C||-55 to +150°C|
|Gain (hFE)||35 to 320hFE||35 to 320hFE|
C1419 transistor applications
- Switching circuit
- General purpose amplifier circuit
- Preamp circuit
- Darlington pair circuit