2SC1061 transistor
2SC1061 specification
- 2SC1061 is an NPN silicon epitaxial silicon transistor
- Collector to emitter voltage is 50V
- Collector to base voltage is 50V
- Emitter to base voltage is 7V
- Collector current is 3A
- Power dissipation is 25W
- DC current gain is 35 to 200hFE
- Gain Bandwidth transition frequency (FT) is 8MHz
- Junction temperature & operating temperature is between -50 to +150℃
- Collector to emitter saturation voltage (VCE (SAT)) is 1V
- Thermal resistance junction to the case is 5℃/W
- Low-frequency power amplifier device
- Low voltage saturation voltage
2SC1061 Pinout
| Pin Number | Pin Name | Description |
| 1 | Base | Base terminal is the trigger for the transistor |
| 2 | Collector | Current flows through the collector |
| 3 | Emitter | Current flows through the emitter terminal |
2SC1061 package
The 2SC1061 NPN transistor has TO-220 large transistor package, it is a power transistor package.
TO-220 is a through-hole three-terminal package that is made of epoxy/plastic material and has the provision to attach a heat sink with it.
The material used will give us temperature resistance and lite weighted transistor package used for amplifier circuit applications.
2SC1061 transistor electrical specification & application description
Voltage specs
The voltage specs of the 2SC1061 transistor are collector to base voltage is 50V, collector to emitter voltage is 50V, and emitter to base voltage is 7V.
Collector to emitter saturation voltage of 2SC1061 transistor is 1V, it is the region switching voltage at a specific condition.
Overall voltage specifications of the 2SC1061 power transistor show that it is a high-power device with higher voltage applications.
Current specs
The collector current value of the 2SC1061 transistor is 3A, it is the maximum load capacity of the device.
Dissipation specs
The power dissipation value of the 2SC1061 transistor is 25W, the dissipation ability is mainly dependent on the device package.
Current gain specs
The DC current gain value of the 2SC1061 transistor is 35 to 200Hfe, applications like the amplifier and voltage regulator utilize this ability of the transistor.
Transition frequency/ Bandwidth frequency specs
The transition frequency of the 2SC1061 transistor is 8MHz, it is the frequency range of the device.
Junction temperature/ operating temperature
The junction temperature or storage temperature is -50 to 150℃.
2SC1061 DATASHEET
If you need the datasheet in pdf please click this link
2SC1061 equivalent
The transistors such as MJC32C, 2SC2075, 2SD1274, 2SD823, BD203, BD797, BD799, and BDX77 are the equivalents of the 2SC1061 transistor. Each of these transistor devices has a similar set of electrical variations, so we can easily replace the place of the 2SC1061 transistor.
2SC1061 complementary
The 2SA671 PNP transistor is complementary to the 2SC1061 NPN transistor, both these transistors have the same and opposite electrical specifications.
2SC1061 vs BD303 vs 2SC2075
In the table below, we listed the electrical specifications of 2SC1061, BD303, and 2SC2075 transistor devices, this comparison is really useful for the replacement process.
| Characteristics | 2SC1061 | BD303 | 2SC2075 |
|---|---|---|---|
| Collector to base voltage (VCB) | 50V | 60V | 80V |
| Collector to emitter voltage (VCE) | 50V | 60V | 80V |
| Emitter to base voltage (VEB) | 7V | 5V | 4V |
| Collector to emitter saturation voltage (VCE (SAT)) | 1V | 1V | 1.5V |
| Collector current (IC) | 3A | 8A | 4A |
| Power dissipation | 25W | 55W | 10W |
| Junction temperature & operating temperature (TJ) | -50 to 150°C | -65 to +150°C | -55 to +150°C |
| Transition frequency (FT) | 8MHZ | 3MHz | 100MHz |
| Gain (hFE) | 35 to 200hFE | 30hFE | 25hFE |
| Thermal resistance | 5℃/W | 2.3℃/W | - |
| Package | TO-220 | TO-220C | TO-220C |
Applications of 2SC1061 transistor
- Low-frequency power amplifier applications
- Modern electronic circuits
- Multi-vibrator circuits
- Voltage regulator circuits
- SMPS
- Motor controller drivers
- H-bridge circuits
- Class B-amplifier
- High power amplifier
- Large signal amplifier
Characteristics curves of 2SC1061 NPN transistor
The figure shows the output characteristics of the 2SC1061 transistor, and the graph plots with collector current vs collector to emitter voltage.
At increased base current values, the collector current increases from a small value to higher with respect to the collector-to-emitter voltage.
The figure shows the DC current gain characteristics curves of the 2SC1061 transistor and the graph plots with DC current gain vs collector current.
At a fixed collector to emitter voltage, dc current gain variation is been plotted at three different temperature variations, initially, it increases and after a particular value, it dips towards a smaller value than the initial.
