2SB817 / B817 transistor

2SB817  B817 transistor
2SB817 B817 transistor

B817 transistor electrical specification

  • 2SB817 PNP silicon POWER transistor device
  • Collector to emitter voltage (VCE) is -140V
  • Collector to base voltage (VCB) is -160V
  • Emitter to base voltage is (VEB) –6V
  • Collector current is -12A
  • Pulsed collector current is -15A
  • Power dissipation is 100W
  • DC current gain is 60 to 200hFE
  • Current gain-bandwidth transition frequency (FT) is 15MHz
  • Junction temperature is between -40 to +150℃
  • Collector to emitter saturation voltage (VCE (SAT)) is -2.5V
  • Output capacitance is 300pF
  • Switching speed is 25us
  • Good linearity of gain
  • High current capacity
  • Wide range of safe operating

B817 transistor Pinout

B817 transistor Pinout
B817 transistor Pinout
Pin Number Pin Name Description
1 Base Base terminal is the trigger for the transistor
2 Collector Current flow through the collector 
3 Emitter  Current flows through the emitter terminal


2SB817 package

B817/ 2SB817 high current transistors have TO-3PN package, TO-3PN is a three-terminal bulkier high POWER package.

TO-3PN package is made with epoxy/plastic material and the backside is coated with metal, these materials provide lite weight and the metal coating will act as the heat sink and transfer the heat towards the heat sink.

B817 transistor specification description & application notes:

Here we explain the electrical specifications of the B817 transistor, this explanation is really helpful for a better understanding of the device for the replacement process.

Voltage specs

The voltage specs of the 2SB817 transistor are collector to base voltage is -160V, collector to emitter voltage is -140V, and emitter to base voltage is -6V.

The collector-to-emitter saturation voltage is -2.5V, which is the switching voltage of the device.

The terminal voltage and switching voltage values of the 2SB817 transistor shows, it is a high-voltage device having many applications.

Current specs

The collector current value is -12A, and the current value of the transistor shows the load capacity.

The pulsed collector current value of the 2SB817 transistor is -15A, it is the current value that is at a specific condition.

The current values of the B817 transistor indicate it had many load applications.

Dissipation specs

The power dissipation of the B817 transistor is 100W, it is the product of voltage and current at the transistor, and this is mainly dependent on the device package.

Current gain specs

The DC gain value of the 2SB817 transistor is 60 to 200Hfe, it is the amplification ability of the device.

Transition frequency

The transition frequency value is 15MHz at the B817 transistor.

Junction temperature/ storage temperature

The junction temperature/ storage temperature of the B817 transistor is -40 to 150℃.

Output capacitance

The output capacitance of the 2SB817 transistor is 300Pf, the capacitance ability is important for some applications.


If you need the datasheet in pdf please click this link

B817 equivalent

2SB817/B817 POWER transistor had equivalent transistors such as 2SB1162, KTB817, MJW1302AG, 2SB1163, 2SA2120, 2SA1943, 2SA1516 and 2SA2151, each of them had same set of electrical specifications.

B817/2SB817 transistor is an audio amplifier and power supply device, so we need to check and verify the specs to become the replacement of B817, the specifications such as voltage, collector current, and PINOUT details.

B817 complementary pair

The B817 PNP transistor has complementary pair of 2SD1047 NPN transistor devices, both of them had the same set of electrical specifications, so can easily use them in push-pull circuit network applications.

2SB817 vs 2SB1162 vs 2SA1943

Collector to emitter voltage (VCE)-140V-160V-250V
Collector to base voltage (VCB)-160V-160V-250V
Emitter to base voltage (VEB)-6V-5V-5V
Collector to emitter saturation voltage (VCE (SAT))-2.5V-2.0V-0.4 to 3V
Collector current (IC)-12A-12A-17A
Collector pulsed current (ICM)-15A-20A-
Power dissipation100W3.5W150W
Junction temperature (TJ)-40 to +150°C-55 to +150°C-50 to +150℃
Transition frequency (FT)15MHz20MHz30MHz
Gain (hFE) 60 to 200hFE60 to 200hFE55 to 160hFE
Noise figure---
Output capacitance 300pF210pF360pF

2SB817 transistor applications

  • Audio frequency amplifier applications
  • Output stage amplifier circuit
  • High-power amplifier circuit
  • Power supply applications
  • Motor driver applications
  • Battery charger circuit
  • Inverter circuit
  • Driver applications

2SB817 graphical characteristics

output statics characteristics of the 2SB817
output statics characteristics of the 2SB817

The graph shows the output statics characteristics of the 2SB817/B817 transistor, the graph plots with collector current vs collector to emitter voltage.

At different base current values, the current curve increases with respect to the collector-to-emitter voltages.

DC current gain characteristics of the 2SB817
DC current gain characteristics of the 2SB817

The graph shows the DC current gain characteristics of the 2SB817 transistor, the graph plots with DC current gain vs collector current.

At a constant collector to emitter voltage, the DC current gain value increases and become constant, and then at the end, it dips.

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